US5656529A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing highly-integrated capacitor
Assignee: Micron Memory Japan Ltd
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Filing: 1996-05-10
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Granted: 1997-08-12
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Expires: 2016-05-10
Abstract
Abstract In a method for manufacturing a capacitor, a lower electrode is formed by an amorphous refractory metal silicide layer and its underlying conductive layer, a heating operation is performed upon the amorphous refractory metal silicide layer, so that the amorphous refractory metal silicide layer is converted into a polycrystalline refractory metal layer having an uneven surface.
Inventors
- 👤 Tadashi Fukase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:16
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S438/00; Y10S438/964
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
108 words
A method for manufacturing a capacitor, comprising the steps of: forming an insulating layer on a semiconductor substrate; perforating a contact hole in said insulating layer; burying an underlying conductive layer in said contact hole; forming an amorphous refractory metal silicide layer with an impurity on said underlying conductive layer; performing a heating operation upon said amorphous refractory metal silicide layer, so that said amorphous refractory metal silicide layer is converted into a polycrystalline refractory metal silicide layer; patterning said polycrystalline refractory metal silicide layer and said underlying conductive layer to form a lower electrode; forming a dielectric layer on said lower electrode; and forming an upper electrode.
Claim 2
Independent Claim
108 words
A method for manufacturing a capacitor, comprising the steps of: forming an insulating layer on a semiconductor substrate; perforating a contact hole in said insulating layer; burying an underlying conductive layer in said contact hole; forming an amorphous refractory metal silicide layer with an impurity on said underlying conductive layer; performing a heating operation upon said amorphous refractory metal silicide layer, so that said amorphous refractory metal silicide layer is converted into a polycrystalline refractory metal silicide layer; patterning said polycrystalline refractory metal silicide layer and said underlying conductive layer to form a lower electrode; forming a dielectric layer on said lower electrode; and forming an upper electrode.
Claim 3
Dependent Claim
47 words
The method as set forth in claim 1, further comprising the steps of: forming a silicon oxide layer on said amorphous refractory metal silicide layer without converting said amorphous refractory metal silicide layer into polycrystal; and removing said silicon oxide layer after said heating operation is performed.
Claim 4
Dependent Claim
27 words
The method as set forth in claim 1, wherein said heating operation is performed in a nitrogen atmosphere at a temperature of about 800° to 900° C.
Claim 5
Dependent Claim
30 words
The method as set forth in claim 1, wherein said underlying conductive layer is made of polycrystalline silicon, and said amorphous refractory metal silicide layer is made of tungsten silicide.
Claim 6
Dependent Claim
20 words
The method as set forth in claim 4, wherein the impurity of said amorphous refractory metal silicide layer is arsenic.
Claim 7
Dependent Claim
25 words
The method as set forth in claim 4, wherein said tungsten silicide has a compositon ratio of silicon to tungsten of approximately 2.2 to 3.0.
Claim 8
Independent Claim
108 words
A method for manufacturing a capacitor, comprising the steps of: forming an insulating layer on a semiconductor substrate; perforating a contact hole in said insulating layer; burying an underlying conductive layer in said contact hole; forming an amorphous refractory metal silicide layer with an impurity on said underlying conductive layer; patterning said amorphous refractory metal silicide layer and said underlying conductive layer to form a lower electrode; performing a heating operation upon said amorphous refractory metal silicide layer, so that said amorphous refractory metal silicide layer is converted into a polycrystalline refractory metal silicide layer; forming a dielectric layer on said lower electrode; and forming an upper electrode.
Claim 9
Independent Claim
108 words
A method for manufacturing a capacitor, comprising the steps of: forming an insulating layer on a semiconductor substrate; perforating a contact hole in said insulating layer; burying an underlying conductive layer in said contact hole; forming an amorphous refractory metal silicide layer with an impurity on said underlying conductive layer; patterning said amorphous refractory metal silicide layer and said underlying conductive layer to form a lower electrode; performing a heating operation upon said amorphous refractory metal silicide layer, so that said amorphous refractory metal silicide layer is converted into a polycrystalline refractory metal silicide layer; forming a dielectric layer on said lower electrode; and forming an upper electrode.
Claim 10
Dependent Claim
53 words
The method as set forth in claim 7, further comprising the steps of: forming a silicon oxide layer on said amorphous refractory metal silicide layer without converting said amorphous refractory metal silicide layer into polycrystal, after said lower electrode is formed; and removing said silicon oxide layer after said heating operation is performed.
Claim 11
Dependent Claim
27 words
The method as set forth in claim 7, wherein said heating operation is performed in a nitrogen atmosphere at a temperature of about 800° to 900° C.
Claim 12
Dependent Claim
30 words
The method as set forth in claim 7, wherein said underlying conductive layer is made of polycrystalline silicon, and said amorphous refractory metal silicide layer is made of tungsten silicide.
Claim 13
Dependent Claim
20 words
The method as set forth in claim 10, wherein the impurity of said amorphous refractory metal silicide layer is arsenic.
Claim 14
Dependent Claim
25 words
The method as set forth in claim 10, wherein said tungsten silicide has a compositon ratio of silicon to tungsten of approximately 2.2 to 3.0.
References Cited (Backward Citations)
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| 7.5 Years (Year 8) | 2004-08-11 | 2005-02-10 | 2005-08-12 | $3760.00 | Window Closed / Lapsed |
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