US5654581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit capacitor
Assignee: Bell Semiconductor LLC
•
Filing: 1995-06-06
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Granted: 1997-08-05
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Expires: 2015-06-06
Abstract
Abstract An integrated circuit with a capacitor includes a conductive substrate, a layer of field dielectric formed on the conductive substrate, a layer of conductive metal or conductive polycrystalline silicon formed on the field dielectric, and first and second laterally spaced apart layers of conductive material formed on the conductive metal or polycrystalline silicon. Each spaced apart layer preferably includes a layer of titanium nitride disposed over a layer of titanium. A layer of capacitor dielectric is deposited on the first of the spaced apart layers, and metal is deposited over the capacitor dielectric and the second layer of conductive material.
Inventors
- 👤 Joseph Rudolph Radosevich
- 👤 Ranbir Singh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:15
CPC Classifications
H; H10; H10B; H10B12/00; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10S; Y10S148/00; Y10S148/014
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
An integrated circuit comprising: a) a conductive substrate; b) a layer of field dielectric formed on said conductive substrate; c) a layer of conductive polycrystalline silicon formed on said layer of field dielectric; d) first and second laterally spaced apart layers of conductive material formed on said layer of polycrystalline silicon and in electrically conductive relation therewith, each of said spaced apart first and second layers comprising a layer of titanium and a layer of titanium nitride; e) a layer of capacitor dielectric disposed on said first layer of conductive material in contacting relation with said layer of titanium nitride; f) a third layer of metal disposed on said layer of capacitor dielectric; g) a fourth layer of metal disposed on said second layer of conductive material.
Claim 2
Dependent Claim
127 words
An integrated circuit comprising: a) a conductive substrate; b) a layer of field dielectric formed on said conductive substrate; c) a layer of conductive polycrystalline silicon formed on said layer of field dielectric; d) first and second laterally spaced apart layers of conductive material formed on said layer of polycrystalline silicon and in electrically conductive relation therewith, each of said spaced apart first and second layers comprising a layer of titanium and a layer of titanium nitride; e) a layer of capacitor dielectric disposed on said first layer of conductive material in contacting relation with said layer of titanium nitride; f) a third layer of metal disposed on said layer of capacitor dielectric; g) a fourth layer of metal disposed on said second layer of conductive material.
Claim 3
Dependent Claim
16 words
The integrated circuit of claim 1 wherein said third and fourth layers of metal comprise aluminum.
Claim 4
Dependent Claim
21 words
The integrated circuit of claim 1 wherein said first and second layers of conductive material are separated by an interlevel dielectric.
Claim 5
Dependent Claim
13 words
The integrated circuit of claim 1 wherein said capacitor dielectric comprises silicon dioxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-08-04 | 2001-02-03 | 2001-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-04 | 2005-02-03 | 2005-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-04 | 2009-02-03 | 2009-08-05 | $7700.00 | Window Closed / Lapsed |