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US5654208A
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Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
Assignee: Wolfspeed Inc
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Filing: 1995-05-08
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Granted: 1997-08-05
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Expires: 2015-05-08
Abstract
Abstract The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.
Inventors
- 👤 Christopher Harris
- 👤 Andrei Konstantinov
- 👤 Erik Janzen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D8/00; H10D8/01; H10D8/043; H10D8/051; H10P30/00; H10P30/20; H10P30/22; H10P32/00; H10P32/10; H10P32/17; H10P32/171; H10P32/172; Y; Y10; Y10S; Y10S148/00; Y10S148/126; Y10S438/00; Y10S438/931; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
120 words
A method for producing a semiconductor device having a semiconductor layer of SiC, said method comprising the steps of a) applying a mask on at least a portion of said SiC layer to coat a first portion of said SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to said SiC layer, c) supplying dopants to the SiC layer during said heat treatment for diffusion of said dopants into the SiC layer at said second portion thereof for doping the SiC layer, and wherein said mask is made of a material selected from the group consisting of crystalline AlN as the only component and AlN as a major component of a crystalline alloy constituting said material.
Claim 2
Independent Claim
120 words
A method for producing a semiconductor device having a semiconductor layer of SiC, said method comprising the steps of a) applying a mask on at least a portion of said SiC layer to coat a first portion of said SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to said SiC layer, c) supplying dopants to the SiC layer during said heat treatment for diffusion of said dopants into the SiC layer at said second portion thereof for doping the SiC layer, and wherein said mask is made of a material selected from the group consisting of crystalline AlN as the only component and AlN as a major component of a crystalline alloy constituting said material.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said mask is made of crystalline AlN.
Claim 4
Dependent Claim
45 words
A method according to claim 1, wherein the mask applied on said layer portion before the heat treatment is made of a material having AlN as a major component of a crystalline alloy, which further comprises one or a combination of group 3B-nitrides and SiC.
Claim 5
Dependent Claim
19 words
A method according to claim 1, wherein said heat treatment is carried out at a temperature above 1500° C.
Claim 6
Dependent Claim
15 words
A method according to claim 1, wherein said dopants supplied for said diffusion are boron.
Claim 7
Dependent Claim
89 words
A method according to claim 1, for producing a semiconductor power device, wherein peripheral regions of the SiC layer are left uncoated by said mask for obtaining diffusion of dopants at the periphery thereof, and wherein the heat treatment and thereby the diffusion is carried out under such conditions that the dopants penetrate through a junction creating a space charge region of said device thereby for creating a guard ring arranged to smooth out the electric field in the peripheral regions during a blocking state of the power device.
Claim 8
Dependent Claim
37 words
A method according to claim 6, wherein said SiC layer is made of at least two sub-layers, a first uppermost layer of P-type and a second layer of N-type onto which the first uppermost layer is arranged.
Claim 9
Dependent Claim
63 words
A method according to claim 1, wherein a step of ion implantation is carried out in said second portion of said SiC layer not coated by said mask before said heat treatment is carried out, and wherein said heat treatment constitutes an annealing for re-crystallizing the ion-implanted layer of the SiC layer, said mask preventing occurring of impurity diffusion into areas covered thereby.
Claim 10
Dependent Claim
66 words
A method according to claim 1, wherein it comprises at least the following steps carried out in the following order: 1) deposition of a mask material on the entire surface of the SiC layer, 2) patterning said mask material for producing said uncoated second portion of the SiC layer, 3) heat treatment of the SiC layer and 4) removal of the mask in a non-mechanical way.
Claim 11
Dependent Claim
97 words
A method according to claim 6, wherein said ion implantation is carried out in said peripheral regions of the SiC layer, wherein ions of the same conductivity type as the dopants to be diffused into the SiC layer are implanted creating a thin highly doped layer close to the surface of the SiC layer and then first an annealing heat treatment and then a heat treatment combined with a supply of dopants for guard ring formation is carried out, the diffusion for said guard ring formation being enhanced by the existence of said highly doped thin layer.
Claim 12
Independent Claim
66 words
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask preventing diffusion of impurities into areas coated by said mask when diffusing into said SiC layer in production of a semiconductor device having a semiconductor layer of said SiC.
Claim 13
Independent Claim
66 words
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask preventing diffusion of impurities into areas coated by said mask when diffusing into said SiC layer in production of a semiconductor device having a semiconductor layer of said SiC.
Claim 14
Independent Claim
71 words
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask for preventing diffusion of impurities into SiC layer areas coated by said mask when annealing said SiC layer after ion implantation in production of a semiconductor device having a semiconductor layer of said SiC.
Claim 15
Independent Claim
71 words
A method of doping a SiC layer comprising using a layer of a material having crystalline AlN as the only component or AlN as a major component of a crystalline alloy constituting said material as a mask for preventing diffusion of impurities into SiC layer areas coated by said mask when annealing said SiC layer after ion implantation in production of a semiconductor device having a semiconductor layer of said SiC.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-08-04 | 2001-02-03 | 2001-08-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-08-04 | 2005-02-03 | 2005-08-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-08-04 | 2009-02-03 | 2009-08-05 | $7700.00 | Window Closed / Lapsed |