Charge coupled device with edge aligned implants and electrodes

Claim 2

A CCD device made by an improved method, comprising the steps of: (a) providing an implant blocking insulative sacrificial layer with patterned openings directly on and exposing a dielectric layer directly on a substrate, such dielectric layer including at least two separate layers; (b) implanting impurity ions through the openings and the dielectric layer into the substrate; (c) depositing conductive electrode material in the openings and forming a first set of electrodes; and (d) removing the sacrificial layer and implanting additional impurity ions into the substrate through the dielectric layer using the first set of electrodes as a mask.

Claim 3

The CCD device made in accordance with the method of claim 1, further including the step of: (e) forming an insulative layer over the first set of electrodes; and (f) forming a second set of electrodes on the insulative layer spaced from the first set of electrodes and on the dielectric layer in regions from which the sacrificial layer was removed.

Claim 4

The CCD device made in accordance with the method of claim 2, further wherein the first and second sets of electrodes are coplanar.

Claim 5

The method of claim 3 wherein the first and second sets of electrodes are made coplanar by chemical mechanical polishing.

Claim 6

A CCD device formed by a method of fabricating, in a first conductivity type semiconductor substrate, a two phase charge coupled device with self-aligned dopant implanted strips in the semiconductor substrate and underlying at least a first set of gate electrodes and deposited prior to deposition of first or second gate electrode layers, comprising the steps of: (a) forming an insulative layer uniformly overlying the semiconductor substrate and implanting the layer with ions of a second conductivity type which is opposite to the first conductivity type to form a channel adjacent the insulative layer; (b) forming a sacrificial layer uniformly overlying the insulative layer whose thickness is selected to block ion implantation directed into the semiconductive layer; (c) patterning the sacrificial layer by removal of the layer in spaced strips to establish a series of first gate electrodes; (d) patterning in the form of spaced strips a photoresist layer on the sacrificial layer at least one edge of which lies on the top of the strips of the sacrificial layer and one edge of which lies in the region where the sacrificial layer has been removed; (e) implanting impurity ions into the semiconductor substrate to form first charge transfer direction biasing implants, the impurity ions being blocked to prevent implantation in regions covered by the sacrificial layer; (f) removing the photoresist and depositing uniformly a first conductive electrode layer; (g) planarizing the first conductive electrode layer to the extent that those portions of the first conductive electrode layer initially residing on the sacrificial layer are entirely removed while those portions of the first conductive electrode layer residing on the insulative layer where the sacrificial layer has been removed are still substantially present, thereby patterning the first conductive electrode layer to form a first clocked phase; (h) removing the sacrificial layer, thereby exposing the sidewalls of the first conductive electrode layer; (i) patterning in the form of spaced strips another photoresist layer on the first conductive electrode layer at least one edge of which lies on the top of the strips of the first conductive electrode layer and one edge of which lies in the regions between the strips of the first conductive electrode layer; (j) implanting additional impurity ions into the semiconductor substrate to define second charge transfer direction biasing implants, the impurity ions being blocked to prevent implantation by the first conductive electrode layer or the photoresist or both; (k) establishing an insulative layer surrounding the first conductive electrode layer; and (l) depositing and patterning a second conductive electrode layer to form a second clocked phase.

Claim 7

A CCD device formed by a method of fabricating, in a first conductivity type semiconductor substrate, a two phase charge coupled device with self-aligned dopant implanted strips in the semiconductor substrate and underlying at least a first set of gate electrodes and deposited prior to deposition of first or second gate electrode layers, comprising the steps of: (a) forming an insulative layer uniformly overlying the semiconductor substrate and implanting the layer with ions of a second conductivity type which is opposite to the first conductivity type to form a channel adjacent the insulative layer; (b) forming a sacrificial layer uniformly overlying the insulative layer whose thickness is selected to block ion implantation directed into the semiconductive layer; (c) patterning the sacrificial layer by removal of the layer in spaced strips to establish a series of first gate electrodes; (d) patterning in the form of spaced strips a photoresist layer on the sacrificial layer at least one edge of which lies on the top of the strips of the sacrificial layer and one edge of which lies in the region where the sacrificial layer has been removed; (e) implanting impurity ions into the semiconductor substrate to form first charge transfer direction biasing implants, the impurity ions being blocked to prevent implantation in regions covered by the sacrificial layer; (f) removing the photoresist and depositing uniformly a first conductive electrode layer; (g) planarizing the first conductive electrode layer to the extent that those portions of the first conductive electrode layer initially residing on the sacrificial layer are entirely removed while those portions of the first conductive electrode layer residing on the insulative layer where the sacrificial layer has been removed are still substantially present, thereby patterning the first conductive electrode layer to form a first clocked phase; (h) removing the sacrificial layer, thereby exposing the sidewalls of the first conductive electrode layer; (i) patterning in the form of spaced strips another photoresist layer on the first conductive electrode layer at least one edge of which lies on the top of the strips of the first conductive electrode layer and one edge of which lies in the regions between the strips of the first conductive electrode layer; (j) implanting additional impurity ions into the semiconductor substrate to define second charge transfer direction biasing implants, the impurity ions being blocked to prevent implantation by the first conductive electrode layer or the photoresist or both; (k) establishing an insulative layer surrounding the first conductive electrode layer; and (l) depositing and patterning a second conductive electrode layer to form a second clocked phase.

Claim 8

A CCD device formed by an improved method, comprising the steps of: (a) providing an implant blocking insulative sacrificial layer with patterned openings on a substrate; (b) implanting impurity ions through the patterned openings into the substrate; (c) providing a dielectric insulative material on the substrate in the patterned openings; (d) uniformly depositing conductive electrode material in the patterned openings and on the sacrificial layer; (e) removing the conductive electrode material from the sacrificial layer to confine it within the patterned openings to thereby form a first set of conductive electrode strips; (f) removing the sacrificial layer; and (g) providing a second insulative layer on the substrate between the first set of conductive electrode strips and on the top and side portions of the first set of conductive electrode strips.

Claim 9

A CCD device formed by an improved method, comprising the steps of: (a) providing an implant blocking insulative sacrificial layer with patterned openings on a substrate; (b) implanting impurity ions through the patterned openings into the substrate; (c) providing a dielectric insulative material on the substrate in the patterned openings; (d) uniformly depositing conductive electrode material in the patterned openings and on the sacrificial layer; (e) removing the conductive electrode material from the sacrificial layer to confine it within the patterned openings to thereby form a first set of conductive electrode strips; (f) removing the sacrificial layer; and (g) providing a second insulative layer on the substrate between the first set of conductive electrode strips and on the top and side portions of the first set of conductive electrode strips.

Claim 10

The CCD device made in accordance with the method of claim 6, further including the steps of providing an additional photoresist layer and removing the sacrificial layer and implanting impurity ions into the substrate through the dielectric insulative material using the first set of conductive electrode strips and the photoresist layer as a mask.

Claim 11

The CCD device made in accordance with the method of claim 7, further including the steps of: (h) forming an insulative layer over the first set of conductive electrode strips; and (i) forming a second set of electrodes on the second insulative layer spaced from the first set of conductive electrode strips.