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US3789267A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel

Assignee: AT&T Inc
•
Filing: 1971-06-28
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Granted: 1974-01-29
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Expires: 1991-06-28
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Abstract

Abstract To ensure predictable directionality of charge transfer in twophase charge coupled devices (CCD''S), the potential well associated with each half-bit must be asymmetrical so as to enhance charge transfer in the desired direction and to inhibit transfer in undesired directions. In the instant invention, localized portions of immobile charge are disposed under the CCD electrodes and, advantageously, offset with respect to the centers of the electrodes so that suitably asymmetrical potential wells are formed when a suitable voltage is applied to the electrodes. In a presently preferred embodiment, the immobile charge is provided by relatively highly doped surface zones in a semiconductor bulk portion of relatively low doping.

Inventors

  • 👤 R Krambeck
  • 👤 R Walden

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 21:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D44/472; H10D44/474

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 213 words
In a charge coupled device for storage and serial transfer in a predetermined direction of information represented by varying amounts of mobile charge carriers coupled to localized potential wells and wherein the device includes a semiconductive storage medium whose bulk is of a first conductivity type and which has a major surface, an insulating layer disposed over and contiguous with said surface, and a plurality of spaced, localized field plate electrodes disposed successively over said layer so as to form a path along said predetermined direction, the improvement being that along said path and beneath each said electrode there is disposed a localized surface zone of about 2000 Angstroms depth of the same conductivity type but higher impurity concentration than the bulk, and limited in lateral extent so as to lie essentially entirely under a limited portion of said electrode and disposed asymmetrically toward the input end with respect to the lateral geometric center of said electrode, the difference in impurity concentrations being sufficient that in response to successive application of operating voltages to the electrodes there are produced under the electrodes localized potential wells having a lower depth in the portions underlying the localized zones, whereby there is favored the transfer of mobile charge carriers in the predetermined direction along said path.
Claim 2
Dependent Claim 213 words
In a charge coupled device for storage and serial transfer in a predetermined direction of information represented by varying amounts of mobile charge carriers coupled to localized potential wells and wherein the device includes a semiconductive storage medium whose bulk is of a first conductivity type and which has a major surface, an insulating layer disposed over and contiguous with said surface, and a plurality of spaced, localized field plate electrodes disposed successively over said layer so as to form a path along said predetermined direction, the improvement being that along said path and beneath each said electrode there is disposed a localized surface zone of about 2000 Angstroms depth of the same conductivity type but higher impurity concentration than the bulk, and limited in lateral extent so as to lie essentially entirely under a limited portion of said electrode and disposed asymmetrically toward the input end with respect to the lateral geometric center of said electrode, the difference in impurity concentrations being sufficient that in response to successive application of operating voltages to the electrodes there are produced under the electrodes localized potential wells having a lower depth in the portions underlying the localized zones, whereby there is favored the transfer of mobile charge carriers in the predetermined direction along said path.
Claim 3
Dependent Claim 32 words
Apparatus as recited in claim 1 further comprising: means for alternately applying first and second voltages to said electrodes sufficient to cause the storage and advance of mobile charge along said path.
Claim 4
Dependent Claim 29 words
Apparatus as recited in claim 2 wherein the first and second voltages are sufficient to maintain the surface of the storage medium along the information channel in deep depletion.
Claim 5
Dependent Claim 21 words
Apparatus as recited in claim 1 wherein the first type semiconductivity is P-type and the apparatus is adapted for N-channel operation.
Claim 6
Dependent Claim 44 words
Apparatus as recited in claim 4 wherein the concentration of P-type impurities in the bulk portion is about 5 X 1014 acceptors per cubic centimeter and the concentration of impurities in the more heavily doped surface zones is about 1017 acceptors per cubic centimeter.
Claim 7
Dependent Claim 54 words
Apparatus as recited in claim 1 further comprising: a pair of conduction paths, each conduction path being connected to a different one of every second electrode in the succession of electrodes; and two-phase circuit means coupled to said conduction paths for successively biasing the electrodes for causing the storage and advance of mobile charge.
Claim 8
Dependent Claim 32 words
Apparatus as recited in claim 6 wherein the voltages supplied by the two-phase circuit means are sufficient to maintain the surface of the storage medium along the information channel in deep depletion.
Claim 9
Dependent Claim 41 words
Apparatus as recited in claim 7 wherein the voltages supplied are sufficient to deplete those portions of the storage medium along the information channel to a depth greater than the depth to which the localized zones extend into the semiconductive bulk.
Claim 10
Dependent Claim 26 words
A charge coupled device in accordance with claim 1 further characterized in that the localized zones have been ion implanted to increase the impurity concentration therein.

References Cited (Backward Citations)

US3374406A Cited
US3305708A Cited
US3564355A Cited
US3621283A Cited
US3697786A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-01-28 1977-07-30 1978-01-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-01-28 1981-07-30 1982-01-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-01-28 1985-07-30 1986-01-29 $7700.00 Window Closed / Lapsed

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