US3305708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated-gate field-effect semiconductor device
Assignee: RCA Corp
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Filing: 1964-11-25
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Granted: 1967-02-21
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Expires: 1984-11-25
Abstract
No abstract record available.
Inventors
- 👤 Ditrick Norman Harold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 03:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/221; H10D62/235; H10D62/299; H10D62/307; H10P14/6322
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
118 words
AN INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE COMPRISING: A CRYSTALLINE SEMICONDUCTIVE BODY OF GIVEN CONDUCTIVITY TYPE HAVING AT LEAST ONE MAJOR FACE; FIRST AND SECOND SPACED LOW-RESISTIVITY REGIONS OF OPPOSITE CONDUCTIVITY TYPE IN SAID BODY IMMEDIATELY ADJACENT SAID ONE MAJOR FACE; FIRST AND SECOND METALLIC CONTACTS ON SAID ONE MAJOR FACE CONNECTED RESPECTIVELY TO SAID FIRST AND SECOND SPACED REGIONS; A LOW-RESISTIVITY ZONE OF SAID GIVEN CONDUCTIVITY TYPE IN SAID BODY IMMEDIATELY ADJACENT SAID ONE MAJOR FACE AND SURROUNDING THE LATERAL PERIPHERY OF ONLY ONE OF SAID SPACED REGIONS; A LAYER OF DIELECTRIC MATERIAL ON SAID ONE MAJOR FACE COVERING THE GAP BETWEEN SAID FIRST AND SECOND SPACED REGIONS; AND, A METALLIC CONTACT ON SAID DIELECTRIC LAYER OVER SAID GAP.
Claim 2
Dependent Claim
118 words
AN INSULATED-GATE FIELD-EFFECT SEMICONDUCTOR DEVICE COMPRISING: A CRYSTALLINE SEMICONDUCTIVE BODY OF GIVEN CONDUCTIVITY TYPE HAVING AT LEAST ONE MAJOR FACE; FIRST AND SECOND SPACED LOW-RESISTIVITY REGIONS OF OPPOSITE CONDUCTIVITY TYPE IN SAID BODY IMMEDIATELY ADJACENT SAID ONE MAJOR FACE; FIRST AND SECOND METALLIC CONTACTS ON SAID ONE MAJOR FACE CONNECTED RESPECTIVELY TO SAID FIRST AND SECOND SPACED REGIONS; A LOW-RESISTIVITY ZONE OF SAID GIVEN CONDUCTIVITY TYPE IN SAID BODY IMMEDIATELY ADJACENT SAID ONE MAJOR FACE AND SURROUNDING THE LATERAL PERIPHERY OF ONLY ONE OF SAID SPACED REGIONS; A LAYER OF DIELECTRIC MATERIAL ON SAID ONE MAJOR FACE COVERING THE GAP BETWEEN SAID FIRST AND SECOND SPACED REGIONS; AND, A METALLIC CONTACT ON SAID DIELECTRIC LAYER OVER SAID GAP.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-02-20 | 1970-08-22 | 1971-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-02-20 | 1974-08-22 | 1975-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-02-20 | 1978-08-22 | 1979-02-21 | $7700.00 | Window Closed / Lapsed |