Patent US576636A successfully refreshed from Google Patents.
Patent US5614055A successfully refreshed from Google Patents.
US5614055A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High density plasma CVD and etching reactor
Assignee: Applied Materials Inc
•
Filing: 1993-08-27
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Granted: 1997-03-25
•
Expires: 2013-08-27
Abstract
Abstract In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings. In yet another aspect, the invention is embodied in a plasma reactor including a conductive dome-shaped electrode overlying the wafer and being connectable to an electrical potential. In a still further aspect, the invention is embodied in a plasma process, including the steps of providing a vacuum processing chamber having a dome-shaped antenna, feeding a processing gas including an electronegative gas into the chamber, resonantly coupling an RF electrical signal to the antenna, and non-resonantly and inductively coupling electromagnetic energy from the antenna into a plasma formed in the processing chamber from the processing gas.
Inventors
- 👤 Kevin Fairbairn
- 👤 Romuald Nowak
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 17:57
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/24; H05H1/26; H05H1/46; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32431; H01J37/3244
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
72 words
An RF inductively coupled plasma reactor for the processing of a wafer, said reactor comprising: a vacuum chamber; one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion.
Claim 2
Dependent Claim
72 words
An RF inductively coupled plasma reactor for the processing of a wafer, said reactor comprising: a vacuum chamber; one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion.
Claim 3
Dependent Claim
25 words
The reactor of claim 1 wherein a concave surface of said antenna is facing and symmetrically disposed relative to the top surface of said wafer.
Claim 4
Dependent Claim
29 words
The reactor of claim 1 wherein an axial height of the dome-shaped portion of the antenna is not less than 20% of the diameter of said vertical cylindrical portion.
Claim 5
Dependent Claim
60 words
The reactor of claim 3 wherein said vacuum chamber comprises a ceiling comprising a vertical cylindrical portion and an overlying dome-shaped portion corresponding respectively to the shapes of said vertical cylindrical and dome-shaped portions of said antenna and wherein said antenna comprises an elongate conductor embedded within said ceiling and coiled around a rotational axis of symmetry of said ceiling.
Claim 6
Dependent Claim
32 words
The reactor of claim 4 wherein said ceiling comprises a plurality of ceiling sections having decreasing radii of curvature from a top of said ceiling and being smoothly joined to each other.
Claim 7
Dependent Claim
22 words
The reactor of claim 1, wherein said substantially dome-shaped portion of the antenna has a circular void centered at the apex thereof.
Claim 8
Dependent Claim
25 words
The reactor of claim 6 wherein said void has a diameter on the order of between 25% and 100% of the diameter of said wafer.
Claim 9
Dependent Claim
26 words
The reactor of claim 6 further comprising: an electrode insulated from said antenna and disposed in said void, said electrode being connectable to an electrical source.
Claim 10
Dependent Claim
19 words
The reactor of claim 8 wherein said electrode is connectable to an RF source during cleaning of said chamber.
Claim 11
Dependent Claim
25 words
The reactor of claim 4 wherein said coiled conductor has a length corresponding to a quarter wavelength of an RF signal applied to said antenna.
Claim 12
Dependent Claim
19 words
The reactor of claim 10 wherein said RF signal has an RF frequency between 400 kHz and 20 MHz.
Claim 13
Dependent Claim
90 words
The reactor of claim 1 wherein at least one of said reactant gases contributes both (a) ions to said plasma for sputter etching and (b) chemical species for chemical vapor deposition, and wherein plasma ion density across said wafer is sufficient so that the rate of said sputter etching on surfaces of the wafer which are not substantially one of (I) parallel, or (ii) perpendicular to an angle of incidence of the ions on the wafer is at least on the order of the rate of said chemical vapor deposition.
Claim 14
Dependent Claim
47 words
The reactor of claim 1 wherein at least one gas source comprises: a plurality of elongate spray nozzles located within and thermally coupled to a vacuum containment wall of said vacuum chamber and extending toward said wafer with respective nozzle tips near the edge of said wafer.
Claim 15
Dependent Claim
14 words
The reactor of claim 13 wherein gas flow out of said nozzles is supersonic.
Claim 16
Dependent Claim
66 words
The reactor of claim 1 wherein at least one gas source comprises: a closed tube inside said vacuum chamber and symmetrically disposed relative to said wafer and following an edge contour of said wafer so as to not overlie a substantial portion of said wafer, said closed tube having a plurality of spray openings therein facing an interior portion of said vacuum chamber overlying said wafer.
Claim 17
Dependent Claim
75 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; and means for spraying a reactant gas at a supersonic velocity toward said portion of said chamber overlying said wafer, so as to produce a substantially uniform distribution of the reactant gas in said portion of the chamber.
Claim 18
Dependent Claim
75 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; and means for spraying a reactant gas at a supersonic velocity toward said portion of said chamber overlying said wafer, so as to produce a substantially uniform distribution of the reactant gas in said portion of the chamber.
Claim 19
Dependent Claim
19 words
The reactor of claim 16 wherein said means for supersonically spraying comprises a plurality of elongate supersonic spray nozzles.
Claim 20
Dependent Claim
25 words
The reactor of claim 17 wherein each one of said nozzles has an inner portion tapering radially inwardly and an outer portion tapering radially outwardly.
Claim 21
Dependent Claim
31 words
The reactor of claim 17 wherein said nozzles extend toward said wafer with respective nozzle tips having gas distribution inlet orifices up to but not overlying the edge of said wafer.
Claim 22
Dependent Claim
21 words
The reactor of claim 19 wherein said spray nozzles are thermally coupled to a vacuum containment wall of said vacuum chamber.
Claim 23
Dependent Claim
29 words
The reactor of claim 19 wherein supersonic gas flow from each nozzle forms an gas diffusion center displaced from the nozzle tip thereof to a location overlying said wafer.
Claim 24
Dependent Claim
29 words
The reactor of claim 19 wherein said orifices each have a size on the order of 10 mils and said chamber has a vacuum between 1 and 30 milliTorr.
Claim 25
Dependent Claim
102 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; a plurality of elongate spray nozzles thermally coupled to a vacuum containment wall of said vacuum chamber and extending away from said containment wall toward said wafer such that a distal end of each of said spray nozzles is disposed no closer to the wafer than an edge thereof, each spray nozzle comprising a nozzle tip having a gas distribution orifice at the distal end.
Claim 26
Dependent Claim
102 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; a plurality of elongate spray nozzles thermally coupled to a vacuum containment wall of said vacuum chamber and extending away from said containment wall toward said wafer such that a distal end of each of said spray nozzles is disposed no closer to the wafer than an edge thereof, each spray nozzle comprising a nozzle tip having a gas distribution orifice at the distal end.
Claim 27
Dependent Claim
130 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a closed tube inside said vacuum chamber for spraying a reactant gas into said portion of said chamber overlying said wafer and symmetrically disposed relative to said wafer and following an edge contour of said wafer so as to not overlie a substantial portion of said wafer, said closed tube having a plurality of spray openings therein facing an interior portion of said vacuum chamber overlying said wafer.
Claim 28
Dependent Claim
130 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a closed tube inside said vacuum chamber for spraying a reactant gas into said portion of said chamber overlying said wafer and symmetrically disposed relative to said wafer and following an edge contour of said wafer so as to not overlie a substantial portion of said wafer, said closed tube having a plurality of spray openings therein facing an interior portion of said vacuum chamber overlying said wafer.
Claim 29
Dependent Claim
114 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; a planar spray showerhead for spraying a reactant gas into said portion of said chamber overlying said wafer, said planar spray showerhead overlying an interior portion of said vacuum chamber over said wafer and having plural spray nozzle openings facing said wafer; and plural magnets in an interior portion of said planar spray showerhead between adjacent ones of said plural nozzle openings, said plural magnets being oriented so as to repel ions from said spray nozzle openings.
Claim 30
Dependent Claim
114 words
A plasma reactor including means for holding a wafer in a vacuum chamber, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma in a portion of said chamber overlying said wafer; a planar spray showerhead for spraying a reactant gas into said portion of said chamber overlying said wafer, said planar spray showerhead overlying an interior portion of said vacuum chamber over said wafer and having plural spray nozzle openings facing said wafer; and plural magnets in an interior portion of said planar spray showerhead between adjacent ones of said plural nozzle openings, said plural magnets being oriented so as to repel ions from said spray nozzle openings.
Claim 31
Dependent Claim
26 words
The reactor of claim 25 wherein said nozzle openings are located in a range of about 25% to 50% of a wafer diameter from said wafer.
Claim 32
Dependent Claim
77 words
A plasma reactor including means for holding a wafer in a vacuum chamber for containing a processing gas, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a conductive dome-shaped electrode insulated from said antenna and overlying said wafer and being connectable to an electrical potential.
Claim 33
Dependent Claim
77 words
A plasma reactor including means for holding a wafer in a vacuum chamber for containing a processing gas, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a conductive dome-shaped electrode insulated from said antenna and overlying said wafer and being connectable to an electrical potential.
Claim 34
Dependent Claim
25 words
The reactor of claim 27 wherein said dome-shaped electrode comprises a portion of a ceiling of said chamber and is connected to ground during processing.
Claim 35
Dependent Claim
23 words
The reactor of claim 28 further comprising means for connecting said dome-shaped electrode to an RF power source during cleaning of said chamber.
Claim 36
Dependent Claim
105 words
A plasma process, comprising the steps of: providing a vacuum processing chamber holding a workpiece to be processed and having on one side thereof an antenna comprising a substantially dome-shaped portion at least partially surrounding a plasma generating region and a vertical cylindrical portion which underlies said substantially domed-shaped portion; feeding a processing gas including an electronegative gas into said processing chamber; resonantly coupling an RF electrical signal to said antenna; non-resonantly and inductively coupling electromagnetic energy from said antenna into a plasma formed in said plasma generating region of said processing chamber from said processing gas, whereby said workpiece is processed by said plasma.
Claim 37
Dependent Claim
105 words
A plasma process, comprising the steps of: providing a vacuum processing chamber holding a workpiece to be processed and having on one side thereof an antenna comprising a substantially dome-shaped portion at least partially surrounding a plasma generating region and a vertical cylindrical portion which underlies said substantially domed-shaped portion; feeding a processing gas including an electronegative gas into said processing chamber; resonantly coupling an RF electrical signal to said antenna; non-resonantly and inductively coupling electromagnetic energy from said antenna into a plasma formed in said plasma generating region of said processing chamber from said processing gas, whereby said workpiece is processed by said plasma.
Claim 38
Dependent Claim
13 words
The plasma process of claim 30, wherein said electronegative gas comprises oxygen gas.
Claim 39
Dependent Claim
13 words
The plasma process of claim 30 wherein said electronegative gas comprises a halogen.
Claim 40
Dependent Claim
18 words
The plasma process of claim 31, wherein said processing gas additionally comprises a precursor gas for silicon oxide.
Claim 41
Dependent Claim
23 words
The plasma process of claim 1, wherein said RF electrical signal has a frequency within the range of 400 kHz to 20 MHz.
Claim 42
Dependent Claim
25 words
The plasma process of claim 34, wherein a pressure of said processing gas within said chamber is within a range of 1 to 30 milliTorr.
Claim 43
Dependent Claim
24 words
The reactor of claim 1 further comprising: means for suppressing a capacitive coupling of the RF energy radiating from the antenna into the chamber.
Claim 44
Dependent Claim
37 words
The reactor of claim 36 wherein said suppressing means comprises: a grounded Faraday shield disposed between the antenna and the plasma generated inside the vacuum chamber, said shield suppressing capacitive coupling between the antenna and the plasma.
Claim 45
Dependent Claim
19 words
The reactor of claim 37 wherein the shield comprises a dome-shaped shield corresponding to the shape of the antenna.
Claim 46
Dependent Claim
74 words
The reactor of claim 38 wherein the shield comprises: a ring comprising a conductive film strip and forming a bottom of the dome-shaped shield, said ring positioned so as to be between a bottom portion of the antenna and the plasma; and, a plurality of conductive film strips, individual ones of which project periodically from the ring along a circumference thereof in a perpendicular direction and forming a top portion of the dome-shaped shield.
Claim 47
Dependent Claim
45 words
The reactor of claim 39 wherein each of the plurality of conductive film strips projecting from the ring is approximately 1 cm in width, and wherein a spacing between each of the plurality of strips along the circumference of the ring is approximately 0.1 cm.
Claim 48
Dependent Claim
20 words
The reactor of claim 1 wherein said vacuum chamber comprises a dome-shaped ceiling corresponding to the shape of the antenna.
Claim 49
Dependent Claim
19 words
The reactor of claim 41 wherein the dome-shaped ceiling comprises a heat-resistant interior layer and an exterior cooling layer.
Claim 50
Dependent Claim
29 words
The reactor of claim 42 wherein said antenna comprises an elongate conductor embedded within said exterior cooling layer and coiled around a rotational axis of symmetry of said ceiling.
Claim 51
Dependent Claim
24 words
The reactor of claim 41 wherein the heat resistant interior layer comprises quartz and the exterior cooling layer comprises a dielectric thermally conductive material.
Claim 52
Dependent Claim
153 words
A plasma reactor including means for holding a wafer in a vacuum chamber for containing a processing gas, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma comprising ions; and a ceiling overlying the wafer comprising at least two ceiling sections having decreasing radii of curvature from a top of the ceiling and being smoothly joined to each other thereby imparting a dome-shape to the ceiling, wherein the ceiling is further away from a center of the wafer than edges of the wafer so as to enhance a density of the plasma over the center of the wafer by providing more volume for diffusion of ions within the plasma thereby providing for a uniform distribution of ions throughout the plasma; and wherein, the ceiling is conductive and is connectable to ground during a sputter etching of the wafer so as to increase a rate of sputter etching.
Claim 53
Dependent Claim
153 words
A plasma reactor including means for holding a wafer in a vacuum chamber for containing a processing gas, comprising: an antenna capable of radiating RF energy into said chamber to generate a plasma comprising ions; and a ceiling overlying the wafer comprising at least two ceiling sections having decreasing radii of curvature from a top of the ceiling and being smoothly joined to each other thereby imparting a dome-shape to the ceiling, wherein the ceiling is further away from a center of the wafer than edges of the wafer so as to enhance a density of the plasma over the center of the wafer by providing more volume for diffusion of ions within the plasma thereby providing for a uniform distribution of ions throughout the plasma; and wherein, the ceiling is conductive and is connectable to ground during a sputter etching of the wafer so as to increase a rate of sputter etching.
Claim 54
Dependent Claim
23 words
The plasma reactor of claim 45 wherein the ceiling is further connectable to a RF power source during cleaning of the vacuum chamber.
Claim 55
Dependent Claim
111 words
An RF inductively coupled plasma reactor including means for holding a wafer in a vacuum chamber, said reactor comprising: one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a circular void centered at the apex of the domed-shaped portion, said. circular void further having a diameter in excess of 33% of the diameter of said wafer; and an electrode insulated from said antenna and disposed in said void, said electrode being connectable to an electrical source.
Claim 56
Dependent Claim
111 words
An RF inductively coupled plasma reactor including means for holding a wafer in a vacuum chamber, said reactor comprising: one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a circular void centered at the apex of the domed-shaped portion, said. circular void further having a diameter in excess of 33% of the diameter of said wafer; and an electrode insulated from said antenna and disposed in said void, said electrode being connectable to an electrical source.
Claim 57
Dependent Claim
19 words
The reactor of claim 47 wherein said electrode is connectable to an RF source during cleaning of said chamber.
Claim 58
Dependent Claim
101 words
An RF inductively coupled plasma reactor including means for holding a wafer in a vacuum chamber, said reactor comprising: one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a grounded Faraday shield disposed between the antenna and the plasma generated inside the vacuum chamber, said shield suppressing capacitive coupling between the antenna and the plasma.
Claim 59
Dependent Claim
101 words
An RF inductively coupled plasma reactor including means for holding a wafer in a vacuum chamber, said reactor comprising: one or more gas sources for introducing into said chamber reactant gases; an antenna capable of radiating RF energy into said chamber to generate a plasma therein by inductive coupling, said antenna comprising a substantially domed-shaped portion at least partially surrounding said plasma and a vertical cylindrical portion which underlies said substantially domed-shaped portion; and, a grounded Faraday shield disposed between the antenna and the plasma generated inside the vacuum chamber, said shield suppressing capacitive coupling between the antenna and the plasma.
Claim 60
Dependent Claim
19 words
The reactor of claim 49 wherein the shield comprises a dome-shaped shield corresponding to the shape of the antenna.
Claim 61
Dependent Claim
74 words
The reactor of claim 50 wherein the shield comprises: a ring comprising a conductive film strip and forming a bottom of the dome-shaped shield, said ring positioned so as to be between a bottom portion of the antenna and the plasma; and, a plurality of conductive film strips, individual ones of which project periodically from the ring along a circumference thereof in a perpendicular direction and forming a top portion of the dome-shaped shield.
Claim 62
Dependent Claim
45 words
The reactor of claim 51 wherein each of the plurality of conductive film strips projecting from the ring is approximately 1 cm in width, and wherein a spacing between each of the plurality of strips along the circumference of the ring is approximately 0.1 cm.
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