Abstract A method for fabricating an MOS transistor includes the steps of forming a gate insulating layer on a substrate of a first conductivity-type, forming a gate on the gate insulating layer, forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity, and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity-type impurity of the disposable layer into the substrate by means of an annealing process, wherein the disposable layer includes a BPSG layer, wherein the BPSG layer is a B+PSG layer which is doped with a higher dopant concentration of boron than that of phosphorus to make a p-type MOS transistor.
A method for fabricating an MOS transistor comprising the steps of: forming a gate insulating layer on a substrate of a first conductivity-type; forming a gate on the gate insulating layer; forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity; and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity type impurity of the disposable layer into the substrate by means of an annealing process; wherein the disposable layer includes a BPSG layer; wherein the BPSG layer is a B+PSG layer which is doped with a higher dopant concentration of boron than that of phosphorus to make a p-type MOS transistor.
Claim 2
Independent Claim
140 words
A method for fabricating an MOS transistor comprising the steps of: forming a gate insulating layer on a substrate of a first conductivity-type; forming a gate on the gate insulating layer; forming a disposable layer over an entire surface of the substrate and the gate, the disposable layer having a first conductivity-type impurity and a second conductivity-type impurity of a higher concentration than that of the first conductivity-type impurity; and forming a source and drain area of the second conductivity-type impurity on the substrate by diffusing the second conductivity type impurity of the disposable layer into the substrate by means of an annealing process; wherein the disposable layer includes a BPSG layer; wherein the BPSG layer is a B+PSG layer which is doped with a higher dopant concentration of boron than that of phosphorus to make a p-type MOS transistor.
Claim 3
Dependent Claim
27 words
The method of claim 1, wherein the B+PSG layer has boron and phosphorus dopant concentrations of 5×10 21 atoms/cm 2 and 1×10 21 atoms/cm 2 , respectively.
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein the annealing process diffuses boron ions into the source and drain area.
Claim 5
Dependent Claim
17 words
The method of claim 1, wherein the disposable layer is deposited through a chemical vapor deposition process.