Power supply wiring for semiconductor device

Claim 2

Power supply wiring adapted for semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprising a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer and electrically connected to said capacitance forming electrically conductive film through a plurality of through holes in said first insulating layer which are disposed, in a direction in which said first power supply line structure extends, at an interval smaller than substantially the same distance as the width of said first power supply line structure; and said second power supply line structures each comprising a second power supply line formed on said semiconductor substrate via a second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer.

Claim 3

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein a plurality of first power supply line structures and a plurality of second power supply line structures are alternately disposed.

Claim 4

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said plurality of through holes of said first insulating layer are formed at the substantially central portion of said first power supply line structure relation to the width direction thereof.

Claim 5

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said capacitance forming insulating film comprises silicon oxide.

Claim 6

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said capacitance forming electrically conductive film comprises polysilicon or polycide.

Claim 7

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said first and second insulating layers are made of silicon oxide.

Claim 8

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said first and second power supply lines are made of metal.

Claim 9

Power supply wiring adapted for semiconductor device as set forth in claim 7, wherein said first and second power supply lines are made of aluminum or aluminum alloy.

Claim 10

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein each of said second power supply line structures includes a first electrically conductive type area formed on a surface portion of said semiconductor substrate, adjacent to said first power supply line structure, and said second power supply line is electrically connected to said first electrically conductive type area.

Claim 11

Power supply wiring adapted for semiconductor device as set forth in claim 9, wherein each of said second power supply line structures also includes a second electrically conductive type area formed on another surface potion of said semiconductor substrate, and said second power supply line is also electrically connected to said second electrically conductive type area.

Claim 12

Power supply wiring adapted for semiconductor device as set forth in claim 1, wherein said first and second power supply lines lie at the substantially same level and their adjacent lateral end portions are so close that they form a capacitance.

Claim 13

Power supply wiring adapted for semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprises a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer said first power supply line including: a first metal layer formed on said capacitance forming electrically conductive film via the first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and a second metal layer formed on said first metal layer via a first additional insulating layer and electrically connected to said first metal layer through a through hole in said first additional insulating layer; and said second power supply line structures each comprise a second power supply line formed on said semiconductor substrate via a second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer.

Claim 14

Power supply wiring adapted for semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprises a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer said first power supply line including: a first metal layer formed on said capacitance forming electrically conductive film via the first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and a second metal layer formed on said first metal layer via a first additional insulating layer and electrically connected to said first metal layer through a through hole in said first additional insulating layer; and said second power supply line structures each comprise a second power supply line formed on said semiconductor substrate via a second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer.

Claim 15

Power supply wiring adapted for semiconductor device as set forth in claim 12, wherein a plurality of through holes of said first additional insulating layer are disposed at an interval substantially equal to that at which through holes of said first insulating layer are disposed.

Claim 16

Power supply wiring adapted for semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprises a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and said second power supply line structures each comprises a second power supply line formed on said semiconductor substrate via a second insulating layer, said second power supply line includes: a first metal layer formed on said semiconductor substrate via said second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer; and a second metal layer formed on said first metal layer via a second additional insulating layer and electrically connected to said first metal layer through a through hole in said second additional insulating layer.

Claim 17

Power supply wiring adapted for semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprises a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and said second power supply line structures each comprises a second power supply line formed on said semiconductor substrate via a second insulating layer, said second power supply line includes: a first metal layer formed on said semiconductor substrate via said second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer; and a second metal layer formed on said first metal layer via a second additional insulating layer and electrically connected to said first metal layer through a through hole in said second additional insulating layer.

Claim 18

Power supply wiring adapted for semiconductor integrated circuit device, comprising: first and second power supply lines which are alternately disposed, a gate electrode and a gate insulating film formed below said first power supply line, said gate electrode being electrically connected to said first power supply line through a plurality of through holes in an insulating layer disposed between said gate electrode and said first power supply line, said through holes being disposed, in a direction in which said first power supply line extends, at an interval smaller than substantially the same distance as the width of said first power supply line, a first electrically conductive type area connected to said second power supply line formed at an area adjacent to said gate electrode below said second power supply line, a second electrically conductive type area connected to said second power supply line formed at another area, and a bypass capacitor formed between said first and second power supply lines.

Claim 19

Power supply wiring adapted for semiconductor integrated circuit device, comprising: first and second power supply lines which are alternately disposed, a gate electrode and a gate insulating film formed below said first power supply line, said gate electrode being electrically connected to said first power supply line through a plurality of through holes in an insulating layer disposed between said gate electrode and said first power supply line, said through holes being disposed, in a direction in which said first power supply line extends, at an interval smaller than substantially the same distance as the width of said first power supply line, a first electrically conductive type area connected to said second power supply line formed at an area adjacent to said gate electrode below said second power supply line, a second electrically conductive type area connected to said second power supply line formed at another area, and a bypass capacitor formed between said first and second power supply lines.

Claim 20

Power supply wiring adapted for semiconductor integrated circuit device as set forth in claim 15, wherein the interval between said first power supply line and said second power supply line equals the minimum design dimension of a metal layer which is used for the power supply lines.

Claim 21

Power supply wiring as claimed in claim 15, wherein said first power supply line includes: a first metal layer formed on said gate electrode via the insulating layer and electrically connected to said gate electrode through said through holes in said insulating layer; and a second metal layer formed on said first metal layer via an additional insulating layer and electrically connected to said first metal layer through a through hole in said additional insulating layer.

Claim 22

Power supply wiring as claimed in claim 15, wherein said second power supply line includes: a first metal layer formed on an insulating layer and electrically connected to said first and second electrically conductive type areas through a through hole in said insulating layer on which said first metal layer is formed; and a second metal layer formed on said first metal layer via an additional insulating layer and electrically connected to said first metal layer through a through hole in said additional insulating layer.

Claim 23

Power supply wiring adapted for a semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprising a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and said second power supply line structures each comprising a second power supply line formed on said semiconductor substrate via a second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer, wherein each of said second power supply line structures includes a first electrically conductive type area formed on a surface portion of said semiconductor substrate, adjacent to said first power supply line structure, said second power supply line is electrically connected to said first electrically conductive type area through said through hole in said second insulating layer, each of said second power supply line structures also includes a second electrically conductive type area formed on another surface portion of said semiconductor substrate, said second power supply line is also electrically connected to said second electrically conductive type area, and, said first electrically conductive type area is not extending to a surface portion of said semiconductor substrate which surface portion is in contact with said capacitance forming insulating film.

Claim 24

Power supply wiring adapted for a semiconductor device comprising: at least one first power supply line structure and at least two second power supply line structures, which are disposed adjacent to both sides of said first power supply line structure; said first power supply line structure comprising a capacitance forming insulating film formed on a semiconductor substrate, a capacitance forming electrically conductive film on said capacitance forming insulating film and a first power supply line formed on said capacitance forming electrically conductive film via a first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole in said first insulating layer; and said second power supply line structures each comprising a second power supply line formed on said semiconductor substrate via a second insulating layer and electrically connected to said semiconductor substrate through a through hole in said second insulating layer, wherein each of said second power supply line structures includes a first electrically conductive type area formed on a surface portion of said semiconductor substrate, adjacent to said first power supply line structure, said second power supply line is electrically connected to said first electrically conductive type area through said through hole in said second insulating layer, each of said second power supply line structures also includes a second electrically conductive type area formed on another surface portion of said semiconductor substrate, said second power supply line is also electrically connected to said second electrically conductive type area, and, said first electrically conductive type area is not extending to a surface portion of said semiconductor substrate which surface portion is in contact with said capacitance forming insulating film.

Claim 25

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said semiconductor substrate is of a second electrically conductive type with an impurity concentration lower than that of said of second electrically conductive type area.

Claim 26

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein a plurality of first power supply line structures and a plurality of second power supply line structures are alternately disposed.

Claim 27

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein a plurality of through holes of said first insulating layer are formed at the substantially central portion of said first power supply line structure relative to the width direction thereof.

Claim 28

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said through holes of said first insulating layer are disposed at an interval smaller than substantially the same distance as the width of said first power supply in structure in the direction in which said first power supply line structure extends.

Claim 29

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said capacitance forming insulating film comprises silicon oxide.

Claim 30

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said capacitance forming electrically conductive film comprises polysilicon or polycide.

Claim 31

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said first and second insulating layers are made of silicon oxide.

Claim 32

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said first and second power supply lines are made of metal.

Claim 33

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said first and second power supply lines are made of aluminum or aluminum alloy.

Claim 34

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said first power supply line includes a first metal layer formed on said capacitance forming electrically conductive film via the first insulating layer and electrically connected to said capacitance forming electrically conductive film through a through hole of said first insulating layer and a second metal layer formed on said first metal layer via a first additional insulating layer and electrically connected to said first metal layer through a through hole of said first additional insulating layer.

Claim 35

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein a plurality of through holes of said first additional insulating layer are disposed at an interval substantially equal to that at which through holes of said first insulating layer are disposed.

Claim 36

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said second power supply line includes a first metal layer formed on said semiconductor substrate via said second insulating layer and electrically connected to said semiconductor substrate through said through hole of said second insulating layer and a second metal layer formed on said first metal layer via a second additional insulating layer and electrically connected to said first metal layer through a through hole of said second additional insulating layer.

Claim 37

Power supply wiring adapted for semiconductor device as set forth in claim 19, wherein said first and second power supply lines lie at the substantially same level and their adjacent lateral end portions are so close that they form a capacitance.

Claim 38

Power supply wiring adapted for semiconductor integrated circuit device, comprising: first and second power supply lines which are alternately disposed, a gate electrode and a gate insulating film formed below said first power supply line, said gate electrode being electrically connected to said first power supply line, a first electrically conductive type area connected to said second power supply line formed at an area adjacent to said gate electrode below said second power supply line without extending to a portion below said gate insulating film, a second electrically conductive type area connected to said second power supply line formed at another area, and a bypass capacitor formed between said first and second power supply lines.

Claim 39

Power supply wiring adapted for semiconductor integrated circuit device, comprising: first and second power supply lines which are alternately disposed, a gate electrode and a gate insulating film formed below said first power supply line, said gate electrode being electrically connected to said first power supply line, a first electrically conductive type area connected to said second power supply line formed at an area adjacent to said gate electrode below said second power supply line without extending to a portion below said gate insulating film, a second electrically conductive type area connected to said second power supply line formed at another area, and a bypass capacitor formed between said first and second power supply lines.

Claim 40

Power supply wiring adapted for semiconductor device as set forth in claim 33, wherein the interval between said first power supply line and said second power supply line equals the minimum design dimension of a metal layer which is used for the power supply lines.