US5597745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming TiN film and TiN film/thin TiSi2 film, and method for fabricating semiconductor element utilizing the same
Assignee: SK Hynix Inc
•
Filing: 1995-04-17
•
Granted: 1997-01-28
•
Expires: 2015-04-17
Abstract
Abstract A method for forming a fine-textured titanium nitride film and fine-textured titanium nitride/thin titanium silicide films, and methods for fabricating semiconductor elements utilizing the same are disclosed. A thin titanium silicide film and a fine-textured nitride film are formed on a semiconductor substrate through depositing a titanium film containing nitrogen on the semiconductor substrate by sputtering a titanium target having a titanium nitride film formed thereon and quenching. A bit line of a COB DRAM element may be formed of tungsten, and a tungsten bit line having good contact characteristics and preserved barrier characteristics can be formed since the fine-textured titanium nitride/thin titanium silicide films may serve as a barrier preventing the tungsten from diffusing at high temperature during subsequent capacitor forming processes. The fine-textured titanium nitride/thin titanium silicide films may be applied to an aluminum wiring, and the titanium silicide formed at the contact part may improve the contact characteristics, and TiAl 3 formed between the titanium nitride film and the aluminum wiring may improve the electromigration characteristics of the metal wiring.
Inventors
- 👤 Jeong S. Byun
- 👤 Hak N. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:07
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
72 words
A method of forming a titanium nitride film comprising the steps of: preparing a titanium target; forming a titanium nitride film on the titanium target; forming an oxide film on a semiconductor substrate; depositing a titanium film containing nitrogen on the oxide film by sputtering under an argon atmosphere the target having the titanium nitride film formed thereon; and forming a nitride film on the oxide film by heat-treating the titanium film.
Claim 2
Independent Claim
72 words
A method of forming a titanium nitride film comprising the steps of: preparing a titanium target; forming a titanium nitride film on the titanium target; forming an oxide film on a semiconductor substrate; depositing a titanium film containing nitrogen on the oxide film by sputtering under an argon atmosphere the target having the titanium nitride film formed thereon; and forming a nitride film on the oxide film by heat-treating the titanium film.
Claim 3
Dependent Claim
18 words
The method of claim 1, wherein the titanium film is subjected to heat-treatment for one to three times.
Claim 4
Dependent Claim
35 words
The method of claim 1, wherein the heat-treatment process is carried out for about 40 seconds at a temperature of about 500° C. and for about 30 seconds at a temperature of about 800° C.
Claim 5
Dependent Claim
24 words
The method of claim 1, wherein the heat-treatment process of the titanium film is carried out under an N 2 or NH 3 atmosphere.
Claim 6
Dependent Claim
40 words
The method of claim 1, wherein the titanium film includes a portion containing nitrogen, wherein the thickness of the portion of the titanium film containing nitrogen corresponds to the thickness of the titanium nitride film formed on the titanium target.
Claim 7
Dependent Claim
21 words
The method of claim 5, wherein nitrogen is contained in the titanium film in a ratio of about 5 to 45%.
Claim 8
Dependent Claim
37 words
The method of claim 5, wherein the ratio of the thickness of the portion of the titanium film containing nitrogen to the entire thickness of the titanium film is in the range of about 0.05 to 0.95.
Claim 9
Independent Claim
81 words
A method for forming a titanium nitride/titanium silicide film comprising steps of: forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen atoms on a semiconductor substrate by sputtering under an argon atmosphere the target having the titanium nitride film formed thereon; and forming a titanium nitride film on the semiconductor substrate and a titanium silicide film at the interface of the semiconductor substrate and the titanium nitride film by heat-treating the titanium film containing nitrogen.
Claim 10
Independent Claim
81 words
A method for forming a titanium nitride/titanium silicide film comprising steps of: forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen atoms on a semiconductor substrate by sputtering under an argon atmosphere the target having the titanium nitride film formed thereon; and forming a titanium nitride film on the semiconductor substrate and a titanium silicide film at the interface of the semiconductor substrate and the titanium nitride film by heat-treating the titanium film containing nitrogen.
Claim 11
Dependent Claim
18 words
The method of claim 8, wherein the titanium film containing nitrogen is subjected to heat-treatment for two times.
Claim 12
Dependent Claim
37 words
The method of claim 9, wherein one heat-treatment process includes a heat-treatment for about 40 seconds at a temperature of about 500° C. and another heat-treatment for about 30 seconds at a temperature of about 800° C.
Claim 13
Dependent Claim
24 words
The method of claim 8, wherein the heat-treatment process of the titanium film is carried out under an N 2 or NH 3 atmosphere.
Claim 14
Dependent Claim
40 words
The method of claim 8, wherein the titanium film includes a portion containing nitrogen, wherein the thickness of the portion of the titanium film containing nitrogen corresponds to the thickness of the titanium nitride film formed on the titanium target.
Claim 15
Dependent Claim
21 words
The method of claim 12, wherein nitrogen is contained in the titanium film in a ratio of about 5 to 45%.
Claim 16
Dependent Claim
37 words
The method of claim 12, wherein the ratio of the thickness of the portion of the titanium film containing nitrogen to the entire thickness of the titanium film is in the range of about 0.05 to 0.95.
Claim 17
Independent Claim
137 words
A method for fabricating a semiconductor element comprising the steps of: forming a gate oxide film on a first conductivity type semiconductor substrate; forming a polysilicon film on the gate oxide film; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the polysilicon film by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; forming a titanium nitride film on the polysilicon film and a titanium silicide film between the polysilicon film and the titanium nitride film by heat-treating the titanium film containing nitrogen; forming a gate by patterning the titanium nitride film, the titanium silicide film and the polysilicon film; and forming impurity regions in the substrate by injecting second conductivity type impurity ions into the substrate using the gate as a mask.
Claim 18
Independent Claim
137 words
A method for fabricating a semiconductor element comprising the steps of: forming a gate oxide film on a first conductivity type semiconductor substrate; forming a polysilicon film on the gate oxide film; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the polysilicon film by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; forming a titanium nitride film on the polysilicon film and a titanium silicide film between the polysilicon film and the titanium nitride film by heat-treating the titanium film containing nitrogen; forming a gate by patterning the titanium nitride film, the titanium silicide film and the polysilicon film; and forming impurity regions in the substrate by injecting second conductivity type impurity ions into the substrate using the gate as a mask.
Claim 19
Independent Claim
173 words
A method for fabricating a semiconductor element having a capacitor comprising the steps of: forming a second conductivity type impurity region in a first conductivity type semiconductor substrate; forming an insulation film on the semiconductor substrate; forming a contact hole by removing the insulation film over the impurity region; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the substrate by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; forming a titanium nitride film on the substrate and forming a titanium silicide film at the interface of the impurity region and the titanium nitride film inside of the contact hole by heat-treating the titanium film containing nitrogen; forming a bit line metal layer on the titanium nitride film; forming a bit line so as to make contact with the impurity region through the contact hole by patterning the titanium nitride film and the metal layer; forming the capacitor of the semiconductor element by carrying out a capacitor forming process.
Claim 20
Independent Claim
173 words
A method for fabricating a semiconductor element having a capacitor comprising the steps of: forming a second conductivity type impurity region in a first conductivity type semiconductor substrate; forming an insulation film on the semiconductor substrate; forming a contact hole by removing the insulation film over the impurity region; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the substrate by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; forming a titanium nitride film on the substrate and forming a titanium silicide film at the interface of the impurity region and the titanium nitride film inside of the contact hole by heat-treating the titanium film containing nitrogen; forming a bit line metal layer on the titanium nitride film; forming a bit line so as to make contact with the impurity region through the contact hole by patterning the titanium nitride film and the metal layer; forming the capacitor of the semiconductor element by carrying out a capacitor forming process.
Claim 21
Dependent Claim
13 words
The method of claim 16, wherein the bit line metal layer comprises tungsten.
Claim 22
Dependent Claim
19 words
The method of claim 16, wherein the bit line metal layer is deposited with a chemical vapor deposition method.
Claim 23
Independent Claim
143 words
A method for forming metal wiring on a semiconductor element comprising the steps of: forming a second conductivity type impurity region in a first conductivity type semiconductor substrate; forming an insulation film on the semiconductor substrate; forming a contact hole by removing the insulation film over the impurity region; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the substrate by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; depositing an aluminum layer on the titanium film, wherein the aluminum is deposited at a temperature such that a titanium nitride film is formed on the substrate and a titanium silicide film is formed at the interface of the impurity region and the titanium nitride film; and forming the metal wiring by patterning the titanium film and the aluminum layer.
Claim 24
Independent Claim
143 words
A method for forming metal wiring on a semiconductor element comprising the steps of: forming a second conductivity type impurity region in a first conductivity type semiconductor substrate; forming an insulation film on the semiconductor substrate; forming a contact hole by removing the insulation film over the impurity region; forming a titanium nitride film on a titanium target; depositing a titanium film containing nitrogen on the substrate by sputtering under an argon atmosphere the titanium target having the titanium nitride film formed thereon; depositing an aluminum layer on the titanium film, wherein the aluminum is deposited at a temperature such that a titanium nitride film is formed on the substrate and a titanium silicide film is formed at the interface of the impurity region and the titanium nitride film; and forming the metal wiring by patterning the titanium film and the aluminum layer.
Claim 25
Dependent Claim
22 words
The method of claim 19, wherein TiAl 3 is formed at the interface of the titanium nitride film and the aluminum layer.
References Cited (Backward Citations)
US4154874A
Cited
US4180596A
Cited
US4837193A
Cited
US4566177A
Cited
US5312772A
Cited
US5108569A
Cited
US5155063A
Cited
US5292678A
Cited
JPH0661179A
Cited
US5427666A
Cited
US5360995A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |