Patent US5597438A successfully refreshed from Google Patents.
US5597438A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etch chamber having three independently controlled electrodes
Assignee: Polaris Innovations Ltd
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Filing: 1995-09-14
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Granted: 1997-01-28
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Expires: 2015-09-14
Abstract
Abstract An etch chamber for anisotropic and selective etching of a semiconductor wafer contains a dielectric window and an externally located first electrode member adjacent to the dielectric window for generating a plasma within the chamber. A second electrode member is located within the chamber for exciting the plasma generated by the first electrode member. A third electrode is located between the first electrode member and the dielectric window for sputtering the dielectric window to provide sidewall passivation for anisotropic and selective etching of a semiconductor wafer located within said chamber. Each electrode member is powered by its own separate RF generator. This arrangement enables the independent control of each of the three electrode members to optimize the etching of the semiconductor wafer located within the chamber.
Inventors
- 👤 Virinder S. Grewal
- 👤 Volker B. Laux
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:43
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
144 words
An etch chamber for anisotropic and selective etching of a semiconductor wafer, comprising: an enclosure having a dielectric window; first electrode means located externally to said enclosure and adjacent to said dielectric window for inductively coupling an RF voltage into a process gas that has been introduced into said enclosure and converting said gas into a plasma; second electrode means located within said enclosure for supporting at least one semiconductor wafer to be etched and exciting said plasma generated by said first electrode means; and third electrode means located between said first electrode means and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of said at least one semiconductor wafer, wherein said first, second, and third electrode means are capable of being independently controlled to optimize the etching of said at least one semiconductor wafer.
Claim 2
Dependent Claim
144 words
An etch chamber for anisotropic and selective etching of a semiconductor wafer, comprising: an enclosure having a dielectric window; first electrode means located externally to said enclosure and adjacent to said dielectric window for inductively coupling an RF voltage into a process gas that has been introduced into said enclosure and converting said gas into a plasma; second electrode means located within said enclosure for supporting at least one semiconductor wafer to be etched and exciting said plasma generated by said first electrode means; and third electrode means located between said first electrode means and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of said at least one semiconductor wafer, wherein said first, second, and third electrode means are capable of being independently controlled to optimize the etching of said at least one semiconductor wafer.
Claim 3
Dependent Claim
15 words
The etch chamber according to claim 1, wherein said dielectric window comprises a quartz plate.
Claim 4
Dependent Claim
13 words
The etch chamber according to claim 1, wherein said semiconductor wafer comprises polysilicon.
Claim 5
Dependent Claim
19 words
The etch chamber according to claim 1, wherein said first electrode means is coupled to a first RF generator.
Claim 6
Dependent Claim
19 words
The etch chamber according to claim 1, wherein said second electrode means is coupled to a second RF generator.
Claim 7
Dependent Claim
19 words
The etch chamber according to claim 1, wherein said third electrode means is coupled to a third RF generator.
Claim 8
Dependent Claim
16 words
The etch chamber according to claim 1, wherein said first electrode means comprises an induction coil.
Claim 9
Dependent Claim
17 words
The etch chamber according to claim 1, wherein said second electrode means comprises a wafer holding chuck.
Claim 10
Dependent Claim
15 words
The etch chamber according to claim 1, wherein said third electrode comprises a grid-shape electrode.
Claim 11
Dependent Claim
162 words
An etch chamber for anisotropic and selective etching of a semiconductor wafer, comprising: an enclosure having a dielectric window; first electrode means located externally to said enclosure and adjacent to said dielectric window for inductively coupling an RF voltage into a process gas that has been introduced into said enclosure and converting said gas into a plasma; second electrode means located within said enclosure for supporting at least one semiconductor wafer to be etched and exciting said plasma generated by said first electrode means; and third electrode means located between said first electrode and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of said at least one semiconductor wafer, RF generator means for supplying an RF energy source to said first, second, and third electrode means, said RF generator means enabling said first, second, and third electrode means to be independently controlled to optimize the etching of said at least one semiconductor wafer.
Claim 12
Dependent Claim
162 words
An etch chamber for anisotropic and selective etching of a semiconductor wafer, comprising: an enclosure having a dielectric window; first electrode means located externally to said enclosure and adjacent to said dielectric window for inductively coupling an RF voltage into a process gas that has been introduced into said enclosure and converting said gas into a plasma; second electrode means located within said enclosure for supporting at least one semiconductor wafer to be etched and exciting said plasma generated by said first electrode means; and third electrode means located between said first electrode and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of said at least one semiconductor wafer, RF generator means for supplying an RF energy source to said first, second, and third electrode means, said RF generator means enabling said first, second, and third electrode means to be independently controlled to optimize the etching of said at least one semiconductor wafer.
Claim 13
Dependent Claim
36 words
The etch chamber according to claim 10, wherein said RF generator means comprises three separate RF generators, each of said RF generators being coupled to an associated one of said first, second, and third electrode means.
Claim 14
Dependent Claim
16 words
The etch chamber according to claim 11, wherein said first electrode means comprises an induction coil.
Claim 15
Dependent Claim
17 words
The etch chamber according to claim 12, wherein said second electrode means comprises a wafer holding chuck.
Claim 16
Dependent Claim
15 words
The etch chamber according to claim 13, wherein said third electrode comprises a grid-shaped electrode.
Claim 17
Dependent Claim
15 words
The etch chamber according to claim 14, wherein said dielectric window comprises a quartz plate.
Claim 18
Dependent Claim
111 words
In an etch chamber of the type having an enclosure with a dielectric window, an induction coil located externally to said enclosure and adjacent to said dielectric window for generating a plasma within said enclosure, and a wafer holding chuck located within said enclosure for exciting said plasma generated by said induction coil, said etch chamber being useful for anisotropic and selective etching of a semiconductor wafer, the improvement therewith comprising: electrode means located between said induction coil and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of at least one semiconductor wafer to be supported on said chuck in said enclosure.
Claim 19
Dependent Claim
111 words
In an etch chamber of the type having an enclosure with a dielectric window, an induction coil located externally to said enclosure and adjacent to said dielectric window for generating a plasma within said enclosure, and a wafer holding chuck located within said enclosure for exciting said plasma generated by said induction coil, said etch chamber being useful for anisotropic and selective etching of a semiconductor wafer, the improvement therewith comprising: electrode means located between said induction coil and said dielectric window for sputtering said dielectric window to provide sidewall passivation for anisotropic and selective etching of at least one semiconductor wafer to be supported on said chuck in said enclosure.
Claim 20
Dependent Claim
28 words
The etch chamber according to claim 16, further comprising RF generator means for supplying an RF energy source to said induction coil, said chuck and said electrode means.
Claim 21
Dependent Claim
67 words
The etch chamber according to claim 17, wherein said RF generator means comprises three separate RF generators, each of said RF generators being coupled to an associated one of said induction coil, said chuck, and said electrode means, said RF generator means enabling said induction coil, said chuck, and said electrode means to be independently controlled to optimize the etching of said at least one semiconductor wafer.
Claim 22
Dependent Claim
15 words
The etch chamber according to claim 16, wherein said dielectric window comprises a quartz plate.
Claim 23
Dependent Claim
15 words
The etch chamber according to claim 16, wherein said electrode means comprise a grid-shaped electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |