Patent EP0281491A1 successfully refreshed from Google Patents.
Patent US1561814A successfully refreshed from Google Patents.
Patent JPS61200539A successfully refreshed from Google Patents.
Patent US5593951A successfully refreshed from Google Patents.
US5593951A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxy of high TC superconductors on silicon
Assignee: International Business Machines Corp
•
Filing: 1995-05-18
•
Granted: 1997-01-14
•
Expires: 2015-05-18
Abstract
Abstract An epitaxial structure comprising a silicon containing substrate and a high T c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
Inventors
- 👤 Franz J. Himpsel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:55
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/203; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/93; Y10S505/00; Y10S505/70; Y10S505/701
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
189 words
A high T c copper-oxide superconductor-substrate combination comprising: a substrate including a layer of silicon having a (001) surface thereof, an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high T c copper-oxide superconductor layer and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and said layer of high T c copper-oxide superconductor formed on said intermediate layer and having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a, b, c, two out of said a, b, c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer, said high T c copper-oxide superconductor is comprised of Y-Ba-Cu oxide.
Claim 2
Dependent Claim
189 words
A high T c copper-oxide superconductor-substrate combination comprising: a substrate including a layer of silicon having a (001) surface thereof, an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high T c copper-oxide superconductor layer and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and said layer of high T c copper-oxide superconductor formed on said intermediate layer and having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a, b, c, two out of said a, b, c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer, said high T c copper-oxide superconductor is comprised of Y-Ba-Cu oxide.
Claim 3
Dependent Claim
207 words
A high T c copper-oxide superconductor-substrate combination comprising: a substrate including a layer of silicon having a (001) surface thereof, an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high T c copper-oxide superconductor layer and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and said layer of high T c copper-oxide superconductor formed on said intermediate layer and having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a, b, c, two out of said a, b, c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer, said high T c copper-oxide superconductor is selected from the group consisting of YBa 2 Cu 3 O 7- ε, and (La 1- χ Ba.sub.χ) 2 CuO 4 .
Claim 4
Dependent Claim
207 words
A high T c copper-oxide superconductor-substrate combination comprising: a substrate including a layer of silicon having a (001) surface thereof, an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high T c copper-oxide superconductor layer and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and said layer of high T c copper-oxide superconductor formed on said intermediate layer and having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a, b, c, two out of said a, b, c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer, said high T c copper-oxide superconductor is selected from the group consisting of YBa 2 Cu 3 O 7- ε, and (La 1- χ Ba.sub.χ) 2 CuO 4 .
Claim 5
Dependent Claim
25 words
The high T c copper-oxide superconductor-substrate combination of claim 1 wherein said intermediate layer has a thickness between about 100 angstroms and about 10,000 angstroms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-14 | 2000-07-15 | 2001-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-14 | 2004-07-15 | 2005-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-14 | 2008-07-15 | 2009-01-14 | $7700.00 | Window Closed / Lapsed |