US5296458A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Epitaxy of high Tc superconducting films on (001) silicon surface
Assignee: International Business Machines Corp
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Filing: 1992-06-04
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Granted: 1994-03-22
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Expires: 2012-06-04
Abstract
Abstract An epitaxial structure comprising a silicon containing substrate and a high T c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
Inventors
- 👤 Franz J. Himpsel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:15
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/20; H10N60/203; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0604; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/702; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/732
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
177 words
A method of forming a high Tc copper-oxide superconductor-substrate combination comprising the steps of: selecting a substrate including a layer of silicon having a (001) surface thereof, first forming an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high Tc copper-oxide superconductor layer, and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and second forming said layer of high Tc copper-oxide superconductor having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a,b,c, two out of said a,b,c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer.
Claim 2
Independent Claim
177 words
A method of forming a high Tc copper-oxide superconductor-substrate combination comprising the steps of: selecting a substrate including a layer of silicon having a (001) surface thereof, first forming an intermediate layer over said silicon layer, said intermediate layer being substantially epitaxial with said (001) silicon surface and being essentially non-reactive with said silicon layer and said superconductor at the temperatures used to form a high Tc copper-oxide superconductor layer, and which is selected from the group consisting of BaO, SrO, CuO, Y 2 O 3 , CaF 2 , BaF 2 , alloys thereof and metal silicide; and second forming said layer of high Tc copper-oxide superconductor having lattice matching to said (001) silicon surface on said intermediate layer, said superconductor having a unit cell characterized by crystallographic axes a,b,c, two out of said a,b,c, axes being oriented substantially 45 degrees with respect to the corresponding two axes of the unit cell of said silicon layer and the remaining axis of said superconductor unit cell being substantially perpendicular to said (001) surface of said silicon layer.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said high Tc copper-oxide superconductor includes a rare earth element and an alkaline earth element.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said high Tc copper-oxide superconductor is comprised of Y--Ba--Cu oxide.
Claim 5
Dependent Claim
35 words
The method of claim 1 wherein said high Tc copper-oxide superconductor is selected from the group consisting of YBa 2 Cu 3 O 7- ε, and (La 1-x Ba x ) 2 CuO 4 .
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein said intermediate layer has a thickness between about 100 angstroms and about 10,000 angstroms.
Claim 7
Dependent Claim
33 words
The method of claim 1 wherein prior to said step of first forming, performing the step of positioning atomically clean silicon surfaces of said layer of silicon in an ultra high vacuum chamber.
References Cited (Backward Citations)
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