Method for forming submicroscopic patterns

Abstract

Abstract A method for forming submicroscopic patterns of a semiconductor device, which comprises: coating a photoresist film on a lower layer to be patterned; primarily exposing the photoresist film through a mask having chrome patterns to a light with an energy lower than the threshold energy for the thickness of the photoresist film; secondarily exposing the photoresist film through the mask to a light with an energy lower than the threshold energy, said mask having been shifted at a predetermined distance; subjecting the exposed photoresist film to development, to completely remove the regions in which the primarily exposed regions overlap with the secondarily exposed regions and half remove the once-exposed regions to form photoresist film patterns, each having four side walls; depositing an insulating layer entirely over the resulting structure; subjecting the insulating layer to anisotropic etch, to form insulating layer spacers at the side walls of the photoresist film patterns; and dry etching the photoresist film patterns and the lower layer with the insulating layer spacers serving as a mask, to form lower layer patterns having a submicroscopic width and a submicroscopic distance therebetween, whereby more submicroscopic patterns than photolithography can allow can be formed.

Inventors

• 👤 Hyeong S. Kim

Bibliographic Details