US5589417A
Expired / Lapsed
US
⏱️ 0.0 years remaining
TiSi2 /TiN clad interconnect technology
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1996-12-31
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Expires: 2015-06-07
Abstract
Abstract A TiSi2/TiN clad LI strap process and structure are disclosed which combine the advantages of both TiSi2 and TiN LI processes. According to the invention, the retention of a thin TiN layer between the local interconnect and contacts provides a diffusion barrier against counterdoping and relaxes the thermal budget for subsequent processing.
Inventors
- 👤 Shin-puu Jeng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/0698; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
114 words
A process for forming a local interconnect comprising: depositing a refractory metal layer over a substrate which includes silicon; annealing the structure thus formed by the foregoing process step in a first ambient gas so as to form a first barrier metal material adjacent a first silicide region; depositing a refractory metal on said first barrier metal material; depositing silicon on said refractory metal deposited on said first barrier metal material; annealing the structure thus formed by the foregoing process steps in a second ambient gas so as to form a second barrier metal material adjacent a conductive region; and substantially etching away exposed regions of said first and said second barrier metal materials.
Claim 2
Dependent Claim
114 words
A process for forming a local interconnect comprising: depositing a refractory metal layer over a substrate which includes silicon; annealing the structure thus formed by the foregoing process step in a first ambient gas so as to form a first barrier metal material adjacent a first silicide region; depositing a refractory metal on said first barrier metal material; depositing silicon on said refractory metal deposited on said first barrier metal material; annealing the structure thus formed by the foregoing process steps in a second ambient gas so as to form a second barrier metal material adjacent a conductive region; and substantially etching away exposed regions of said first and said second barrier metal materials.
Claim 3
Dependent Claim
26 words
A process as recited in claim 1 wherein said deposited silicon is selected from the group consisting of amorphous silicon, polycrystalline silicon or a combination thereof.
Claim 4
Dependent Claim
15 words
A process as recited in claim 1 wherein said first barrier metal material comprises TiN.
Claim 5
Dependent Claim
16 words
A process as recited in claim 1 wherein said first silicide region comprises TiSi 2 .
Claim 6
Dependent Claim
15 words
A process as recited in claim 1 wherein said conductive region comprises TiSi 2 .
Claim 7
Dependent Claim
18 words
A process as recited in claim 1 wherein said first and second ambient gases are N 2 .
Claim 8
Dependent Claim
106 words
A process for forming a local interconnect comprising: depositing a first titanium layer over a substrate that includes silicon; annealing the structure thus formed by the foregoing process step in ambient N 2 so as to form a first TiN region abutting a first TiSi 2 region; depositing a second titanium layer on said first TiN region; depositing silicon on said second titanium layer deposited on said first TiN region; annealing the structure thus formed by the foregoing process steps in ambient N 2 so as to form a second TiN region abutting a second TiSi 2 region; and substantially etching away exposed regions of TiN.
Claim 9
Dependent Claim
106 words
A process for forming a local interconnect comprising: depositing a first titanium layer over a substrate that includes silicon; annealing the structure thus formed by the foregoing process step in ambient N 2 so as to form a first TiN region abutting a first TiSi 2 region; depositing a second titanium layer on said first TiN region; depositing silicon on said second titanium layer deposited on said first TiN region; annealing the structure thus formed by the foregoing process steps in ambient N 2 so as to form a second TiN region abutting a second TiSi 2 region; and substantially etching away exposed regions of TiN.
Claim 10
Dependent Claim
14 words
A process as recited in claim 7 wherein said deposited silicon is amorphous silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-31 | 2000-07-01 | 2000-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-31 | 2004-07-01 | 2004-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-31 | 2008-07-01 | 2008-12-31 | $7700.00 | Window Closed / Lapsed |