US5587623A
Expired / Lapsed
US
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Field emitter structure and method of making the same
Assignee: eMagin Corp
•
Filing: 1996-04-03
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Granted: 1996-12-24
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Expires: 2016-04-03
Abstract
Abstract A vertical field emitter structure and field emission device such as a flat panel display utilizing such structure. Self-aligned gate and emitter fabrication is described, together with virtual column field emitter structures, comprising an emitter or gated emitter with conductive columns connecting the emitter to an underlying resistor or conductor structure formed by chemical or other modification of portions of an underlying layer. The display of the invention utilizes field emission structures with low turn-voltages and high accelerating voltages, thereby permitting high brightness, small pixel size, low manufacturing costs, uniform brightness, and high energy efficiency to be achieved.
Inventors
- 👤 Gary W. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:23
CPC Classifications
H; H01; H01J; H01J31/00; H01J31/08; H01J31/10; H01J31/12; H01J31/123; H01J31/125; H01J31/127; G; G02; G02B; G02B30/00; G02B30/20; G02B30/34; G02B30/35; G09; G09G; G09G3/00; G09G3/001; H01J29/00; H01J29/02; H01J29/028; H01J29/46; H01J29/82; H01J29/94; H01J3/00; H01J3/02; H01J3/021; H01J3/022; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30403; H01J2201/30426; H01J2201/30446; H01J2201/30453; H01J2201/30457; H01J2201/319; H01J2209/00; H01J2209/38; H01J2209/385; H01J2329/00; H01J2329/86; H01J2329/8625; H01J2329/864; H01J2329/8645; H04; H04N; H04N5/00; H04N5/66; H04N5/70; H04N5/74; H04N5/7475; H04N5/7491
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
98 words
An emitter tip structure for use in a field emission device, comprising: a substrate; an emitter tip on the substrate; a multi-layer electrode structure peripherally overlying and in alignment with the emitter tip, wherein the multi-layer electrode structure comprises: electrode conductive layer; and at least three successive insulative layers comprising different insulative materials in successively adjacent insulative layers, between said electrode conductive layer and the substrate, wherein said different insulative material in successively adjacent insulative layers comprises respectively different dielectric constant materials in said successively adjacent insulative layers, for providing current leakage control in said emitter tip structure.
Claim 2
Dependent Claim
98 words
An emitter tip structure for use in a field emission device, comprising: a substrate; an emitter tip on the substrate; a multi-layer electrode structure peripherally overlying and in alignment with the emitter tip, wherein the multi-layer electrode structure comprises: electrode conductive layer; and at least three successive insulative layers comprising different insulative materials in successively adjacent insulative layers, between said electrode conductive layer and the substrate, wherein said different insulative material in successively adjacent insulative layers comprises respectively different dielectric constant materials in said successively adjacent insulative layers, for providing current leakage control in said emitter tip structure.
Claim 3
Dependent Claim
40 words
An emitter tip structure for use in a field emission device, according to claim 1, wherein the emitter tip has been formed using a reactively formed mask at the bottom of a beam line etched through the multi-layer electrode structure.
Claim 4
Dependent Claim
52 words
An emitter tip structure for use in a field emission device, according to claim 1, wherein the emitter tip comprises a vertical column field emitter element disposed on the substrate and overlyingly surrounded by the multi-layer electrode structure, wherein the multi-layer electrode structure has been formed by a sputtering or CVD process.
Claim 5
Dependent Claim
29 words
An emitter tip structure according to claim 3, wherein the substrate has been planarized by use of a spin-on layer prior to the sputtering or CVD process being performed.
Claim 6
Dependent Claim
31 words
An emitter tip structure according to claim 1, wherein the differing insulative layers comprise insulator materials selected from the group consisting of silicon monoxide, silicon dioxide, alumina, and amorphous, undoped silicon.
Claim 7
Dependent Claim
19 words
An emitter tip structure according to claim 1, wherein the emitter tip is reposed on a high resistivity material.
Claim 8
Dependent Claim
17 words
An emitter tip structure according to claim 1, wherein the high resistivity material comprises a cermet material.
Claim 9
Dependent Claim
32 words
An emitter tip structure according to claim 1, wherein the high resistivity material comprises a composition including chromium and silicon dioxide having a resistance in the range of 0.01 to 20 Gigaohms.
Claim 10
Dependent Claim
43 words
An emitter tip structure according to claim 1, wherein the electrode conductive layer is overlaid with an insulative material on an opposite side thereof from the side of said conductive electrode layer on which said at least two differing insulative layers are disposed.
Claim 11
Dependent Claim
32 words
An emitter tip structure according to claim 1, wherein the emitter tip is connected with an underlying layer of a material selected from the group consisting of resistor materials and conductor materials.
Claim 12
Dependent Claim
31 words
An emitter tip structure according to claim 1, wherein the emitter tip is coated with a layer of low work function material selected from the group consisting of barium and diamond.
Claim 13
Dependent Claim
29 words
An emitter tip structure according to claim 1, wherein the multi-layer electrode structure comprises an electrode conductive layer between insulative layers on either side of the electrode conductive layer.
Claim 14
Dependent Claim
52 words
An emitter tip structure according to claim 1, wherein said electrode conductive layer extends inwardly toward an electron emission locus of said emitter tip to a greater extent than an adjacent one of said differing insulative layers, so that the electrode conductive layer is in overhanging relationship to said adjacent insulative layer.
Claim 15
Dependent Claim
22 words
An emitter tip structure according to claim 1, further comprising a substrate, and a plurality of the emitter tips on said substrate.
Claim 16
Dependent Claim
30 words
An emitter tip structure according to claim 1, wherein said successively adjacent insulative layers comprise a first insulative layer of silicon monoxide and a second insulative layer of silicon dioxide.
Claim 17
Dependent Claim
80 words
An emitter tip structure for use in a field emission device, comprising a vertical column field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure including a gate electrode layer and at least three adjacent layers of insulative materials of different dielectric constants under the gate electrode layer, between the gate electrode layer and the field emitter element to reduce surface leakage over dielectric surfaces between the gate electrode layer and the field emitter element.
Claim 18
Dependent Claim
80 words
An emitter tip structure for use in a field emission device, comprising a vertical column field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure including a gate electrode layer and at least three adjacent layers of insulative materials of different dielectric constants under the gate electrode layer, between the gate electrode layer and the field emitter element to reduce surface leakage over dielectric surfaces between the gate electrode layer and the field emitter element.
Claim 19
Dependent Claim
27 words
An emitter tip structure according to claim 16, wherein the multiple insulative layers comprise insulative layer providing an etch stop in field emitter regions of the structure.
Claim 20
Dependent Claim
93 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, wherein the gate electrode structure comprises an electrode conductive layer and at least three insulative layers of different dielectric constants are disposed between said electrode conductive layer and the substrate, and wherein the field emitter element comprises a deposited emitter material layer including doped polysilicon deposited by a vapor phase deposition process selected from tile group consisting of sputtering, chemical vapor deposition, and evaporation processes.
Claim 21
Dependent Claim
93 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, wherein the gate electrode structure comprises an electrode conductive layer and at least three insulative layers of different dielectric constants are disposed between said electrode conductive layer and the substrate, and wherein the field emitter element comprises a deposited emitter material layer including doped polysilicon deposited by a vapor phase deposition process selected from tile group consisting of sputtering, chemical vapor deposition, and evaporation processes.
Claim 22
Dependent Claim
36 words
An emitter tip structure according to claim 18, wherein the deposited emitter material layer is further treated with a low work function material by a treatment technique selected from the group consisting of coating and impregnation.
Claim 23
Dependent Claim
27 words
An emitter tip structure according to claim 19, wherein the low work function material is selected from the group consisting of barium and doped or defective diamond.
Claim 24
Dependent Claim
107 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a lower columnar pedestal portion having a side wall and an upper extremity, with an emitter tip being disposed on the upper extremity of the lower columnar pedestal portion and with a cathodically protective sacrificial material deposited on the side wall of the lower colunmar pedestal portion.
Claim 25
Dependent Claim
107 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a lower columnar pedestal portion having a side wall and an upper extremity, with an emitter tip being disposed on the upper extremity of the lower columnar pedestal portion and with a cathodically protective sacrificial material deposited on the side wall of the lower colunmar pedestal portion.
Claim 26
Dependent Claim
88 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a mesa-shaped body with a planarized horizontal top surface, and the mesa-shaped main body has a low work function material deposited on the planarized horizontal top surface thereof.
Claim 27
Dependent Claim
88 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a mesa-shaped body with a planarized horizontal top surface, and the mesa-shaped main body has a low work function material deposited on the planarized horizontal top surface thereof.
Claim 28
Dependent Claim
17 words
An emitter tip structure according to claim 22, wherein the low work function material is n-type diamond.
Claim 29
Dependent Claim
77 words
An emitter tip structure for use in a field emission device comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, wherein the gate electrode structure comprises a gate electrode conductive layer and at least three insulative of different dielectric constants disposed between said gate electrode conductive layer and the field emitter element, and wherein the field emitter element comprises a coated pre-sharpened tip of a low work function material.
Claim 30
Dependent Claim
77 words
An emitter tip structure for use in a field emission device comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, wherein the gate electrode structure comprises a gate electrode conductive layer and at least three insulative of different dielectric constants disposed between said gate electrode conductive layer and the field emitter element, and wherein the field emitter element comprises a coated pre-sharpened tip of a low work function material.
Claim 31
Dependent Claim
17 words
An emitter tip structure according to claim 24, wherein the low work function material is n-type diamond.
Claim 32
Dependent Claim
90 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the said substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a mesa-shaped main body with a planarized horizontal top surface formed of a low work function material and a side wall surface formed of a high work function material.
Claim 33
Dependent Claim
90 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the said substrate, between the substrate and an electrode conductive layer, wherein the field emitter element comprises a mesa-shaped main body with a planarized horizontal top surface formed of a low work function material and a side wall surface formed of a high work function material.
Claim 34
Dependent Claim
33 words
An emitter tip structure according to claim 26, wherein the low work function material is n-type diamond and the high work function material is selected from the group consisting of silicon and molybdenum.
Claim 35
Dependent Claim
69 words
An emitter tip structure for use in a field emission device, comprising a substrate having a high resistivity layer thereon, an emitter element on the high resistivity layer, and a gate electrode structure peripherally overlying and in alignment with the emitter tip, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the said substrate, between the substrate and an electrode conductive layer.
Claim 36
Dependent Claim
69 words
An emitter tip structure for use in a field emission device, comprising a substrate having a high resistivity layer thereon, an emitter element on the high resistivity layer, and a gate electrode structure peripherally overlying and in alignment with the emitter tip, said gate electrode structure including at least three adjacent insulative layers of different dielectric constants on the said substrate, between the substrate and an electrode conductive layer.
Claim 37
Dependent Claim
16 words
An emitter tip structure according to 28, wherein the high resistivity layer comprises a cermet material.
Claim 38
Dependent Claim
16 words
An emitter tip structure according to 28, wherein the high resistivity layer comprises a cermet material.
Claim 39
Dependent Claim
27 words
An emitter tip structure according to claim 28, wherein the high resistivity layer has a resistance in the range of from about 0.01 to about 20 Gigaohms.
Claim 40
Dependent Claim
19 words
An emitter structure according to claim 28, wherein the high resistivity layer overlies a conductor element on the substrate.
Claim 41
Dependent Claim
31 words
An emitter tip structure according to claim 31, wherein the conductor element on the substrate is coupled to conductive lines of an X-Y conductor grid providing an addressable emitter tip structure.
Claim 42
Dependent Claim
80 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure wherein the field emitter element comprises high work function material laterally adjacent to at least three layers of low work function material, whereby the high work function material surrounding the at least three layers of low work function material provides a focused beam of electrons when the field emitter structure is energized.
Claim 43
Dependent Claim
80 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure wherein the field emitter element comprises high work function material laterally adjacent to at least three layers of low work function material, whereby the high work function material surrounding the at least three layers of low work function material provides a focused beam of electrons when the field emitter structure is energized.
Claim 44
Dependent Claim
81 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, the said gate electrode structure having at least three adjacent insulative layers of different dielectric constants disposed on the said substrate between the substrate and an electrode conductive layer, the said field emitter element comprising an emitter tip element formed of a niobium:silicon composition of from 20% silicon:80% niobium to 80% silicon:20% niobium.
Claim 45
Dependent Claim
81 words
An emitter tip structure for use in a field emission device, comprising a field emitter element disposed on a substrate and overlyingly surrounded by a gate electrode structure, the said gate electrode structure having at least three adjacent insulative layers of different dielectric constants disposed on the said substrate between the substrate and an electrode conductive layer, the said field emitter element comprising an emitter tip element formed of a niobium:silicon composition of from 20% silicon:80% niobium to 80% silicon:20% niobium.
Claim 46
Dependent Claim
22 words
A field emitter structure according to claim 34, wherein the niobium:silicon composition is a material of construction of the emitter tip element.
Claim 47
Dependent Claim
22 words
An field emitter structure according to claim 34, wherein the niobium:silicon composition is deposited as a coating on the emitter tip element.
Claim 48
Dependent Claim
100 words
A field emitter structure, comprising a low work function material layer deposited on a surface of high work function material, within a cavity on the surface of the high work function material, so that the high work function surface material surrounds the low work function material, at least three layers of differing dielectric materials peripherally overlying and circumscribing the low work function material layer, and a gate electrode structure formed on the dielectric material, whereby the high work function material surrounding the low work function material layer provides a focused beam of electrons when the field emitter structure is energized.
Claim 49
Dependent Claim
100 words
A field emitter structure, comprising a low work function material layer deposited on a surface of high work function material, within a cavity on the surface of the high work function material, so that the high work function surface material surrounds the low work function material, at least three layers of differing dielectric materials peripherally overlying and circumscribing the low work function material layer, and a gate electrode structure formed on the dielectric material, whereby the high work function material surrounding the low work function material layer provides a focused beam of electrons when the field emitter structure is energized.
Claim 50
Dependent Claim
24 words
A field emitter structure according to claim 37, wherein the high work function material is selected from the group consisting of silicon and molybdenum.
Claim 51
Dependent Claim
16 words
A field emitter structure according to claim 37, wherein the low work function material is diamond.
Claim 52
Dependent Claim
22 words
A field emitter structure according to claim 37, wherein the low work function material forms a planar surface, diamond micro-crystallites formed thereon.
References Cited (Backward Citations)
US3665241A
Cited
US3753022A
Cited
US3998678A
Cited
US3921102A
Cited
US3970887A
Cited
US4008412A
Cited
US3935500A
Cited
US3982147A
Cited
US4164680A
Cited
US4095133A
Cited
US4337115A
Cited
US4256532A
Cited
US4227883A
Cited
US4325000A
Cited
US4307507A
Cited
JPS5894741A
Cited
US4578614A
Cited
US4498952A
Cited
US4663559A
Cited
US4513308A
Cited
US4614564A
Cited
US4683024A
Cited
US4724328A
Cited
US4824795A
Cited
US4670090A
Cited
US4774433A
Cited
US4685996A
Cited
US4853545A
Cited
US4940916A
Cited
US4940916B1
Cited
US5053673A
Cited
US5070282A
Cited
US4990766A
Cited
US4964946A
Cited
US5141459A
Cited
US5463269A
Cited
US5030895A
Cited
US5188977A
Cited
US5384509A
Cited
US5129850A
Cited
US5141460A
Cited
US5191217A
Cited
US5229331A
Cited
US5374868A
Cited
US5449435A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-24 | 2004-06-24 | 2004-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-24 | 2008-06-24 | 2008-12-24 | $7700.00 | Window Closed / Lapsed |