US5374868A
Expired / Lapsed
US
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Method for formation of a trench accessible cold-cathode field emission device
Assignee: Micron Technology Inc
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Filing: 1992-09-11
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Granted: 1994-12-20
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Expires: 2012-09-11
Abstract
Abstract A field emitter structure is formed, having trench accessible cold cathode tips is fabricated by forming trenches in a substrate. The trenches are subsequently filled with a conformal insulating layer, a highly conductive layer, and a polysilicon layer. The layers are etched to form emitter tips which are disposed contiguous with the trenches. Electrical signals are propagated through the trenches permitting increased performance of the emitter structure.
Inventors
- 👤 Kevin Tjaden
- 👤 J. Brett Rolfson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:04
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30403; H01J2201/30426; H01J2329/00; H01J2329/86; H01J2329/8625
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
60 words
A cathode emitter structure comprising: a substrate having troughs disposed therein; a conformal insulating layer disposed superjacent said substrate, said conformal insulating layer being a dielectric, and said dielectric comprising at least one of silicon dioxide, silicon nitride, BPSG, and TEOS; a highly conductive material layer substantially filling said troughs; and emitter tips disposed superjacent said highly conductive material layer.
Claim 2
Dependent Claim
60 words
A cathode emitter structure comprising: a substrate having troughs disposed therein; a conformal insulating layer disposed superjacent said substrate, said conformal insulating layer being a dielectric, and said dielectric comprising at least one of silicon dioxide, silicon nitride, BPSG, and TEOS; a highly conductive material layer substantially filling said troughs; and emitter tips disposed superjacent said highly conductive material layer.
Claim 3
Dependent Claim
47 words
The cathode emitter structure according to claim 1, wherein said troughs are disposed parallel to one another, said troughs having a first end and a second end, said second ends of said troughs being connected to a trench, said trench being disposed substantially normal to said troughs.
Claim 4
Dependent Claim
18 words
The cathode emitter structure according to claim 2, wherein said emitter tips are selectively addressable through said trenches.
Claim 5
Dependent Claim
14 words
The cathode emitter structure according to claim 3, wherein said emitter tips comprise polysilicon.
Claim 6
Dependent Claim
23 words
The cathode emitter structure according to claim 4, wherein said conductive material layer comprises at least one of tungsten silicide (WSiX) and polysilicon.
Claim 7
Dependent Claim
21 words
The cathode emitter structure according to claim 2, wherein said conformal insulating layer is disposed on said substrate at said trenches.
Claim 8
Dependent Claim
88 words
A cathode emitter structure having a plurality of troughs disposed in a substrate, a conductive material layer substantially filling said troughs, and emitter tips disposed superjacent said conductive material layer, the structure formed by: forming trenches in a substrate; creating a conformal insulating layer superjacent said substrate, said conformal insulating layer for isolating emitter tips; depositing a conductive layer superjacent said insulated trenches, said conductive layer for propagating an electrical signal through said trenches to said emitter tips; and etching said conductive layer thereby forming the emitter tips.
Claim 9
Dependent Claim
88 words
A cathode emitter structure having a plurality of troughs disposed in a substrate, a conductive material layer substantially filling said troughs, and emitter tips disposed superjacent said conductive material layer, the structure formed by: forming trenches in a substrate; creating a conformal insulating layer superjacent said substrate, said conformal insulating layer for isolating emitter tips; depositing a conductive layer superjacent said insulated trenches, said conductive layer for propagating an electrical signal through said trenches to said emitter tips; and etching said conductive layer thereby forming the emitter tips.
Claim 10
Dependent Claim
20 words
The process according to claim 7, wherein said trenches are arranged in substantially parallel rows, said rows being electrically isolated.
Claim 11
Dependent Claim
14 words
The process according to claim 8, wherein said insulating layer is approximately 500-5000 Å.
Claim 12
Dependent Claim
24 words
The process according to claim 9, wherein said insulating layer is comprised of at least one of silicon dioxide, silicon nitride, TEOS, and BPSG.
Claim 13
Dependent Claim
17 words
The process according to claim 10, wherein said conductive layer is selectively etchable to said insulating layer.
Claim 14
Dependent Claim
15 words
The process according to claim 11, wherein said emitter tips are disposed superjacent said trenches.
Claim 15
Dependent Claim
15 words
The process according to claim 11, wherein said emitter tips are disposed within said trenches.
Claim 16
Dependent Claim
29 words
The process according to claim 13, further comprising: depositing a highly conductive layer between said insulating layer and said conductive layer, said highly conductive layer comprising tungsten silicide (WSiX).
Claim 17
Independent Claim
64 words
A method for the formation of a baseplate having isolated emitter structures, said method comprising the following steps of: forming troughs in a substrate; depositing a highly conductive layer superjacent said substrate; depositing cathode material layer superjacent said conductive layer, said cathode material layer comprising polysilicon; and etching said layers, thereby forming cathodes contiguous with said troughs, said cathodes being disposed above said troughs.
Claim 18
Independent Claim
64 words
A method for the formation of a baseplate having isolated emitter structures, said method comprising the following steps of: forming troughs in a substrate; depositing a highly conductive layer superjacent said substrate; depositing cathode material layer superjacent said conductive layer, said cathode material layer comprising polysilicon; and etching said layers, thereby forming cathodes contiguous with said troughs, said cathodes being disposed above said troughs.
Claim 19
Dependent Claim
35 words
The method according to claim 15, further comprising depositing a conformal dielectric layer prior to depositing said highly conductive layer, said dielectric layer comprising at least one of silicon dioxide, silicon nitride, TEOS, and BPSG.
Claim 20
Dependent Claim
14 words
The method according to claim 16, further comprising planarizing said highly conductive material layer.
Claim 21
Dependent Claim
17 words
The method according to claim 17, wherein said dielectric layer physically separates said troughs of conical cathodes.
Claim 22
Dependent Claim
37 words
The method according to claim 18, wherein said conical cathodes are arranged in rows, said rows being substantially parallel to one another, a plurality of said rows of conical cathodes being disposed in each of said troughs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |