Electron emitting device, method for producing the same, and display apparatus and electron scribing apparatus utilizing same.

Claim 2

An electron emitting device comprising: a substrate; an insulating layer formed thereon and having a hollow part therein; a substantially conical electrode formed in said hollow part; and a conductive layer formed on said insulating layer and having an aperture on said hollow part; wherein said hollow part is formed by etching utilizing an ion beam.

Claim 3

An electron emitting device according to claim 1, wherein said insulating layer is provided with plural hollow parts, said substantially conical electrode is provided in each of said plural hollow parts, and said conductive layer is provided with plural apertures respectively corresponding to said plural hollow parts.

Claim 4

An electron emitting device according to claim 1, wherein said ion beam is a focused ion beam.

Claim 5

An electron emitting device according to claim 1, wherein said substantially conical electrode and said conductive layer are formed simultaneously.

Claim 6

A display apparatus utilizing the electron emitting device according to claim 1.

Claim 7

An electron beam drawing apparatus utilizing the electron emitting device according to claim 1.

Claim 8

A field emission electron emitting device which comprises: irradiating a substrate of an insulating material with a focused ion beam along an arbitrary circle defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a projection at the bottom thereof; covering said projection with a conductive material thereby forming a point-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said point-shaped electron emitting part.

Claim 9

A field emission electron emitting device which comprises: irradiating a substrate of an insulating material with a focused ion beam along an arbitrary circle defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a projection at the bottom thereof; covering said projection with a conductive material thereby forming a point-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said point-shaped electron emitting part.

Claim 10

A field emission electron emitting device which comprises: irradiating a substrate of a semiconductive or conductive material having a surfacial insulating layer with a focused ion beam along an arbitrary circle defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a projection at the bottom thereof; covering said projection with a conductive material thereby forming a point-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said point-shaped electron emitting part.

Claim 11

A field emission electron emitting device which comprises: irradiating a substrate of a semiconductive or conductive material having a surfacial insulating layer with a focused ion beam along an arbitrary circle defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a projection at the bottom thereof; covering said projection with a conductive material thereby forming a point-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said point-shaped electron emitting part.

Claim 12

A field emission electron emitting device according to claim 8, wherein said insulating layer is formed by vacuum evaporation.

Claim 13

A field emission electron emitting device according to claim 7, wherien said point-shaped electron emitting part is formed by vacuum evaporation.

Claim 14

A field emission electron emitting device according to claim 7, wherein said electrode is formed by vacuum evaporation.

Claim 15

A field emission electron emitting device according to claim 7, wherein said point-shaped electron emitting part and said electrode are formed simultaneously by vacuum evaporation.

Claim 16

A field emission electron emitting device according to claim 7, wherein the depth and shape of said electric field forming space are controlled by the accelerating voltage, implanted ion dose and/or implanted ion specy of said focused ion beam.

Claim 17

A field emission electron emitting device according to claim 7, which comprises being subjected to a treatment for reducing the work function of said point-shaped electron emitting part.

Claim 18

A field emission electron emitting device according to claim 14, wherein the work funtion of said point-shaped electron emitting part is reduced by covering the surface thereof with a material of a lower work function than that of the substrate.

Claim 19

A field emission electron emitting device according to claim 7, comprising said electric field forming space and said point-shaped electron emitting part in plural number on a single substrate.

Claim 20

A field emission electron emitting device which comprises: irradiating a substrate of an insulating material with a focused ion beam along an arbitrary race track-shaped trajectory defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a line-shaped projection at the bottom thereof; covering said line-shaped projection with a conductive material thereby forming a line-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said line-shaped electron emitting part.

Claim 21

A field emission electron emitting device which comprises: irradiating a substrate of an insulating material with a focused ion beam along an arbitrary race track-shaped trajectory defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a line-shaped projection at the bottom thereof; covering said line-shaped projection with a conductive material thereby forming a line-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said line-shaped electron emitting part.

Claim 22

A field emission electron emitting device which comprises: irradiating a substrate of a semiconductive or conductive material having a surfacial insulating layer with a focused ion beam along an arbitrary race track-shaped trajectory defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a line-shaped projection at the bottom thereof; covering said line-shaped projection with a conductive material thereby forming a line-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said line-shaped electron emitting part.

Claim 23

A field emission electron emitting device which comprises: irradiating a substrate of a semiconductive or conductive material having a surfacial insulating layer with a focused ion beam along an arbitrary race track-shaped trajectory defined on the surface of said substrate thereby forming an ion implanted area therein; chemically etching said substrate to eliminate said ion implanted area, thereby forming an electric field forming space having a line-shaped projection at the bottom thereof; covering said line-shaped projection with a conductive material thereby forming a line-shaped electron emitting part; and covering the surface of said substrate, excluding said electric field forming space, with a conductive material, thereby forming an electrode for forming an electric field in cooperation with said line-shaped electron emitting part.

Claim 24

A field emission electron emitting device according to claim 18, wherein said insulating layer is formed by vacuum evaporation.

Claim 25

A field emission electron emitting device according to claim 17, wherein said line-shaped electron emitting part is formed by vacuum evaporation.

Claim 26

A field emission electron emitting device according to claim 17, wherein said electrode is formed by vacuum evaporation.

Claim 27

A field emission electron emitting device according to claim 17, wherein said line-shaped electron emitting part and said electrode are formed simultaneously by vacuum evaporation.

Claim 28

A field emission electron emitting device according to claim 17, wherein the depth and shape of said electric field forming space are controlled by the accelerating voltage, implanted ion dose and/or implanted ion specy of said focused ion beam.

Claim 29

A field emission electron emitting device according to claim 17, which comprises being subjected to a treatment for reducing the work function of said line-shaped electron emitting part.

Claim 30

A field emission electron emitting device according to claim 24, wherein the work function of said line-shaped electron emitting part is reduced by covering the surface thereof with a material of a lower work function than that of said substrate.

Claim 31

A field emission electron emitting device according to claim 17, wherein said electric field forming space and said line-shaped electron emitting part are formed in plural number on a single substrate.

Claim 34

A method according to claim 27, wherein said substrate comprises a semiconductor substrate, and an insulating layer formed on said semiconductor substrate.

Claim 35

A method according to claim 28, wherein said semiconductor substrate comprises GaAs and Si.

Claim 36

A method according to claim 28, wherein said semiconductor substrate comprises an insulating substrate and a semiconductor layer formed on said insulating substrate.

Claim 37

A method according to claim 28, wherein said insulating layer is formed of a material selected from SiO₂, semi-insulative Si₃N₄ and A1S.

Claim 38

A method according to claim 27, wherein said conductive material is selected from Mo, Ta, Ti and Pt.

Claim 39

A method according to claim 27, further comprising a step for depositing a material of low work function.

Claim 40

A method according to claim 33, wherein said material is selected at least from borides and carbides.

Claim 41

A method according to claim 34, wherein said borides include LaB₆ and SmB₆.

Claim 42

A method according to claim 34, wherein said carbides include TiC and ZrC.

Claim 43

A method according to claim 27, wherein said substrate comprises a crystalline material.

Claim 44

A method according to claim 27, wherein said crystalline material is a monocrystalline or polycrystalline material.

Claim 45

A method according to claim 27, wherein said crystalline material is selected from Si, Ge, yttlium-aluminum garnet (YAG), yttlium-iron garnet (YIG) and GaAs.

Claim 46

A method according to claim 27, wherein the irradiation with said ion beam is conducted along a circle having the center at a desired position.

Claim 47

A method according to claim 27, wherein the irradiation with said ion beam is conducted along a race track-shaped trajectory having linear portions between two semi-circles having the centers at desired position.