Field emission device and method of making the same

Claim 1

A method for forming a field emission device comprising the steps of: A providing a substrate having at least a major surface; B depositing and selectively patterning a mask onto the major surface of the substrate, thereby exposing a portion of the substrate and covering another portion of the substrate with the mask; C performing an etch of the masked substrate to selectively remove a portion of the substrate surrounding and under the mask, thereby forming an etched substrate having a protuberance with an apex on the major surface of the substrate under the mask; D performing a first oxidation of the etched substrate to form a first oxidation layer, wherein the first oxidation layer extends beneath the mask such that a portion of the first oxidation layer is exposed and another portion of the first oxidation layer is covered by the mask; E performing a perpendicular etch to selectively remove the exposed portion of the first oxidized layer from about the mask, thereby leaving the another covered portion of the first oxidized layer under the mask; F performing a second oxidation of the substrate subsequent to the perpendicular etch, thereby forming a second oxidation layer on the substrate; G depositing a layer of material including one of a conductive and semiconductive material onto the second oxidized layer, thereby forming a conductive layer substantially in a plane with the apex of the protuberance; and H performing an etch, subsequent to depositing the layer of material, to remove portions of the first oxidized layer and portions of the second oxidized layer, thereby exposing at least the apex of the protuberance.

Claim 2

A method for forming a field emission device comprising the steps of: A providing a substrate having at least a major surface; B depositing and selectively patterning a mask onto the major surface of the substrate, thereby exposing a portion of the substrate and covering another portion of the substrate with the mask; C performing an etch of the masked substrate to selectively remove a portion of the substrate surrounding and under the mask, thereby forming an etched substrate having a protuberance with an apex on the major surface of the substrate under the mask; D performing a first oxidation of the etched substrate to form a first oxidation layer, wherein the first oxidation layer extends beneath the mask such that a portion of the first oxidation layer is exposed and another portion of the first oxidation layer is covered by the mask; E performing a perpendicular etch to selectively remove the exposed portion of the first oxidized layer from about the mask, thereby leaving the another covered portion of the first oxidized layer under the mask; F performing a second oxidation of the substrate subsequent to the perpendicular etch, thereby forming a second oxidation layer on the substrate; G depositing a layer of material including one of a conductive and semiconductive material onto the second oxidized layer, thereby forming a conductive layer substantially in a plane with the apex of the protuberance; and H performing an etch, subsequent to depositing the layer of material, to remove portions of the first oxidized layer and portions of the second oxidized layer, thereby exposing at least the apex of the protuberance.

Claim 3

A method for forming a field emission device as claimed in claimed 1 wherein the step of depositing the layer of material includes depositing a doped polysilicon.

Claim 4

A method for forming a field emission device as claimed in claimed 1 wherein the substrate is selected from a group of suitable materials consisting of silicon, diamond, germanium, and gallium arsenide.

Claim 5

A method for forming a field emission device as claimed in claimed 1 wherein the performing of the etch of the substrate is achieved by a wet anisotropic etch.

Claim 6

A method for forming a field emission device as claimed in claimed 1 wherein the step of depositing the layer of material includes depositing an aluminum.

Claim 7

A method for forming a field emission device as claimed in claimed 1 wherein the performing of a perpendicular etch is achieved by a reactive ion etch.

Claim 8

A method for forming a field emission device as claimed in claimed 1 wherein the performing of a perpendicular etch is achieved by ion milling.

Claim 9

The method for forming a field emission device as claimed in claimed 1 wherein depositing and selectively pattering the mask onto the major surface is achieved with a photomask.

Claim 10

A method for forming a field emission device as claimed in claimed 1 wherein the depositing and selectively pattering the mask onto the major surface is achieved with a hardmask.

Claim 11

A method for forming a field emission device comprising the steps of: A providing a semiconductor substrate having at least a major surface; B depositing and selectively patterning a mask onto the major surface of the semiconductor substrate, thereby exposing portions of the semiconductor substrate and covering other portions of the semiconductor substrate; C performing a wet anisotropic material etch on the semiconductor substrate that removes the semiconductor substrate in the exposed portions and removes the semiconductor substrate under the mask to form a protuberance; D performing a first oxidation of the masked and etched semiconductor substrate, thereby forming a first oxidization layer on the semiconductor substrate; E performing a perpendicular etch to remove the first oxidation of the semiconductor substrate from about the mask, thereby exposing the semiconductor substrate; F performing a second oxidation of the semiconductor substrate subsequent to the perpendicular etch, thereby forming a second oxidation layer on the semiconductor substrate; G depositing an insulator layer onto the second oxidation layer; H depositing a layer of material including one of a conductive and semiconductive material onto the insulator layer, thereby placing a conductive layer substantially in a plane with the protuberance; and I performing an etch to remove some of the oxidized material subsequent to depositing the layer of material, thereby exposing at least the protuberance formed of the semiconductor substrate.

Claim 12

A method for forming a field emission device comprising the steps of: A providing a semiconductor substrate having at least a major surface; B depositing and selectively patterning a mask onto the major surface of the semiconductor substrate, thereby exposing portions of the semiconductor substrate and covering other portions of the semiconductor substrate; C performing a wet anisotropic material etch on the semiconductor substrate that removes the semiconductor substrate in the exposed portions and removes the semiconductor substrate under the mask to form a protuberance; D performing a first oxidation of the masked and etched semiconductor substrate, thereby forming a first oxidization layer on the semiconductor substrate; E performing a perpendicular etch to remove the first oxidation of the semiconductor substrate from about the mask, thereby exposing the semiconductor substrate; F performing a second oxidation of the semiconductor substrate subsequent to the perpendicular etch, thereby forming a second oxidation layer on the semiconductor substrate; G depositing an insulator layer onto the second oxidation layer; H depositing a layer of material including one of a conductive and semiconductive material onto the insulator layer, thereby placing a conductive layer substantially in a plane with the protuberance; and I performing an etch to remove some of the oxidized material subsequent to depositing the layer of material, thereby exposing at least the protuberance formed of the semiconductor substrate.

Claim 13

A method for forming a field emission device as claimed in claimed 10 wherein the step of depositing the layer of material includes depositing a doped polysilicon.

Claim 14

A method for forming a field emission device as claimed in claimed 10 wherein the semiconductor substrate is selected from a group of suitable materials consisting of silicon, diamond, germanium, gallium arsenide.

Claim 15

A method for forming a field emission device as claimed in claimed 10 wherein the step of depositing the layer of material includes depositing an aluminum.

Claim 16

A method for forming a field emission device as claimed in claimed 10 wherein the performing of a perpendicular etch is achieved by reactive ion etch.

Claim 17

A method for forming a field emission device as claimed in claimed 10 wherein the performing of a perpendicular etch is achieved by ion milling.

Claim 18

A method for forming a field emission device comprising the steps of: A providing a substrate of a suitable material having a major surface; B depositing and selectively patterning a photomask onto the major surface to provide a masked substrate; C performing a anisotropic material etch on the masked substrate to selectively remove some material from the etched substrate, thereby forming a protuberance under the mask; D performing a first oxidation of the etched substrate, thereby forming a first oxidation layer; E performing a normal etch to remove at least a portion of first oxidation layer; F performing a second oxidation of the substrate subsequent to performing the normal etch, thereby forming a second oxidation layer; G depositing insulating material onto the second oxidation layer; H depositing a layer of material including one of a conductive and semiconductive material onto the insulating material; I performing an etch, subsequent to depositing the layer of material, to remove some of the first oxidized layer and some of the insulating material, thereby exposing at least the protuberance formed of the substrate.

Claim 19

A method for forming a field emission device comprising the steps of: A providing a substrate of a suitable material having a major surface; B depositing and selectively patterning a photomask onto the major surface to provide a masked substrate; C performing a anisotropic material etch on the masked substrate to selectively remove some material from the etched substrate, thereby forming a protuberance under the mask; D performing a first oxidation of the etched substrate, thereby forming a first oxidation layer; E performing a normal etch to remove at least a portion of first oxidation layer; F performing a second oxidation of the substrate subsequent to performing the normal etch, thereby forming a second oxidation layer; G depositing insulating material onto the second oxidation layer; H depositing a layer of material including one of a conductive and semiconductive material onto the insulating material; I performing an etch, subsequent to depositing the layer of material, to remove some of the first oxidized layer and some of the insulating material, thereby exposing at least the protuberance formed of the substrate.

Claim 20

A method for forming a field emission device as claimed in claimed 16 wherein the step of depositing the layer of material includes depositing a doped polysilicon.

Claim 21

A method for forming a field emission device as claimed in claimed 16 wherein the substrate is selected from a group of suitable materials consisting of silicon, diamond, germanium, gallium arsenide.

Claim 22

A method for forming a field emission device as claimed in claimed 16 wherein the etching of the semiconductor material is achieved by a wet anisotropic etch.

Claim 23

A method for forming a field emission device as claimed in claimed 16 wherein the step of depositing the layer of material includes depositing an aluminum.

Claim 24

A method for forming a field emission device as claimed in claimed 16 wherein the performing of a perpendicular etch is achieved by reactive ion etch.

Claim 25

A method for forming a field emission device as claimed in claimed 16 wherein the performing of a perpendicular etch is achieved by ion milling.