US5587337A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor process for forming bump electrodes with tapered sidewalls
Assignee: Toshiba Corp
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Filing: 1995-05-19
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Granted: 1996-12-24
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Expires: 2015-05-19
Abstract
Abstract A method of manufacturing bump electrodes with a larger top surface area than bottom surface area is disclosed. First, an organic layer is deposited. Then holes and grooves partially surrounding the holes are formed in the organic layer. Next, heat is applied to the organic film, causing the organic film to shrink. This causes the openings to expand at the top away from the grooves partially surrounding the holes. Metallic bumps are then deposited within the holes.
Inventors
- 👤 Toshiaki Idaka
- 👤 Hirokazu Ezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:00
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10P; H10P95/00; H10P95/08; H10W72/01251; H10W72/01255; H10W72/20; H10W72/231; H10W72/234; H10W72/251; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
151 words
A method for manufacturing semiconductor devices comprising the steps of: forming a plurality of pad areas on a semiconductor substrate, forming a passivation film on said pad areas, and forming first openings in said passivation film in positions corresponding to said pad areas; covering the entire surface of the resulting passivation film with an organic film; forming second openings in said organic film in positions corresponding to said first openings and in communication with said respective first openings and forming groove portions in the surface of said organic film at least in positions between said second openings; effecting a heat treatment to contract said organic film and enlarge the upper end portion of said second opening in a direction towards a portion in which said groove portion is not formed; forming bump electrodes of metal connected to said pad areas in said first and second openings; and removing said organic film.
Claim 2
Independent Claim
151 words
A method for manufacturing semiconductor devices comprising the steps of: forming a plurality of pad areas on a semiconductor substrate, forming a passivation film on said pad areas, and forming first openings in said passivation film in positions corresponding to said pad areas; covering the entire surface of the resulting passivation film with an organic film; forming second openings in said organic film in positions corresponding to said first openings and in communication with said respective first openings and forming groove portions in the surface of said organic film at least in positions between said second openings; effecting a heat treatment to contract said organic film and enlarge the upper end portion of said second opening in a direction towards a portion in which said groove portion is not formed; forming bump electrodes of metal connected to said pad areas in said first and second openings; and removing said organic film.
Claim 3
Dependent Claim
46 words
A method according to claim 1, wherein said groove portion is formed in the surface of said organic film in position between said second openings and the periphery of said semiconductor substrate and in the surface of said organic film in position between said second openings.
Claim 4
Dependent Claim
33 words
A method according to claim 1, wherein said bump electrode is formed in said first and second openings by one of methods of gold-plating, copper-plating, sputtering of metal and vapor deposition of metal.
Claim 5
Independent Claim
133 words
A method for manufacturing semiconductor device, comprising the steps of: forming an organic film on a substrate; forming a plurality of openings in said organic film and grooves in at least those portions of said organic film which are located among the openings; applying heat to said organic film, thereby causing said organic film to shrink and the openings to expand at top away from said grooves; forming bump electrodes made of metal, in said openings respectively; adhering a sheet member to tops of said bump electrodes and pulling the sheet member upward, thereby removing said bump electrodes from said openings; and inserting lower portions of said bump electrodes into openings made in a semiconductor substrate, setting each bump electrode in contact with a pad formed in the opening of said semiconductor substrate.
Claim 6
Independent Claim
133 words
A method for manufacturing semiconductor device, comprising the steps of: forming an organic film on a substrate; forming a plurality of openings in said organic film and grooves in at least those portions of said organic film which are located among the openings; applying heat to said organic film, thereby causing said organic film to shrink and the openings to expand at top away from said grooves; forming bump electrodes made of metal, in said openings respectively; adhering a sheet member to tops of said bump electrodes and pulling the sheet member upward, thereby removing said bump electrodes from said openings; and inserting lower portions of said bump electrodes into openings made in a semiconductor substrate, setting each bump electrode in contact with a pad formed in the opening of said semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-24 | 2000-06-24 | 2000-12-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-24 | 2004-06-24 | 2004-12-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-24 | 2008-06-24 | 2008-12-24 | $7700.00 | Window Closed / Lapsed |