US5496770A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for manufacturing a semiconductor chip bump having improved contact characteristics
Assignee: Samsung Electronics Co Ltd
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Filing: 1994-02-08
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Granted: 1996-03-05
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Expires: 2014-02-08
Abstract
Abstract A connection bump of a semiconductor chip is formed by a photoresist pattern. The photoresist pattern is obtained through an exposure process by which photolithography solution layers of positive and/or negative type are repeatedly exposed and thereafter developed to obtain a photoresist pattern corresponding to the connection bump. Since the upper portion of the manufactured bump is no larger than the lower portion thereof, the bumps do not contact each other even though the upper portion of the bump is stretched due to a pressure induced during a process of bonding internal leads in a TAB package. The connection bump formed according to the present invention has a high aspect ratio, thereby preventing the internal leads from contacting the semiconductor chip surface and advantageously facilitating the removal of the photoresist pattern after the bump formation process to simplify overall manufacturing process.
Inventors
- 👤 Chun-geun Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 08:28
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/20; H10W72/251; H10W72/29; H10W72/90; H10W72/931; H10W72/934; H10W72/941; H10W72/9415
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A method for manufacturing a connection bump on a semiconductor chip bonding pad, comprising the steps of: (a) depositing a first photoresist layer on said bonding pad; (b) exposing said first photoresist layer; (c) depositing a second photoresist layer on said exposed first photoresist layer; (d) exposing a portion of said second photoresist layer and further exposing a portion of said exposed first photoresist layer through a pattern mask; (e) developing said exposed first and second photoresist layer portions to obtain a photoresist pattern; and (f) depositing a metal in the photoresist pattern to obtain a connection bump.
Claim 2
Independent Claim
98 words
A method for manufacturing a connection bump on a semiconductor chip bonding pad, comprising the steps of: (a) depositing a first photoresist layer on said bonding pad; (b) exposing said first photoresist layer; (c) depositing a second photoresist layer on said exposed first photoresist layer; (d) exposing a portion of said second photoresist layer and further exposing a portion of said exposed first photoresist layer through a pattern mask; (e) developing said exposed first and second photoresist layer portions to obtain a photoresist pattern; and (f) depositing a metal in the photoresist pattern to obtain a connection bump.
Claim 3
Dependent Claim
37 words
The method according to claim 1, wherein said step of exposing a portion of said second photoresist layer and further exposing a portion of said first photoresist layer is performed by irradiating light through a pattern mask;
Claim 4
Dependent Claim
33 words
The method according to claim 1, wherein said photoresist pattern corresponding to said connection bump has a lower diameter which is at least as large as an upper diameter of the photoresist pattern.
Claim 5
Dependent Claim
19 words
The method according to claim 1, wherein a thickness of the photoresist pattern is at least about 10 μm.
Claim 6
Dependent Claim
24 words
The method according to claim 1, wherein said step of depositing a metal in the photoresist pattern includes a step of electroplating a metal.
Claim 7
Dependent Claim
28 words
The method according to claim 1, wherein said step of depositing a metal in the photoresist pattern includes a step of metal plating by a chemical oxidation-reduction reaction.
Claim 8
Independent Claim
77 words
A method for manufacturing a connection bump on a semiconductor chip bonding pad, comprising the steps of: (a) sequentially depositing first and second positive-type photoresist layers on said bonding pad; (b) exposing said first and second positive-type photoresist layers by irradiating light through first and second pattern masks; (c) forming a photoresist pattern by developing said exposed first and second positive-type photoresist layers; and (d) depositing a metal in the photoresist pattern to obtain a connection bump.
Claim 9
Independent Claim
77 words
A method for manufacturing a connection bump on a semiconductor chip bonding pad, comprising the steps of: (a) sequentially depositing first and second positive-type photoresist layers on said bonding pad; (b) exposing said first and second positive-type photoresist layers by irradiating light through first and second pattern masks; (c) forming a photoresist pattern by developing said exposed first and second positive-type photoresist layers; and (d) depositing a metal in the photoresist pattern to obtain a connection bump.
Claim 10
Dependent Claim
34 words
The method for manufacturing a connection bump on a semiconductor chip bonding pad as claimed in claim 7, wherein said second pattern mask has an aperture which is larger than said first pattern mask.
Claim 11
Dependent Claim
34 words
The method for manufacturing a connection bump on a semiconductor chip bonding pad as claimed in claim 7, wherein said second aperture pattern exposes an area which is larger than said first aperture pattern,
Claim 12
Dependent Claim
34 words
The method for manufacturing a connection bump on a semiconductor chip bonding pad as claimed in claim 7, wherein said second aperture pattern exposes an area which is smaller than said first aperture pattern.
References Cited (Backward Citations)
US3821785A
Cited
US4141731A
Cited
US4293637A
Cited
US4205099A
Cited
US5310699A
Cited
JPH01293635A
Cited
US4880708A
Cited
US5298459A
Cited
US5185055A
Cited
JPH03119550A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |