US4880708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization scheme providing adhesion and barrier properties
Assignee: NXP USA Inc
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Filing: 1988-07-05
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Granted: 1989-11-14
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Expires: 2008-07-05
Abstract
Abstract A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.
Inventors
- 👤 Ravinder K. Sharma
- 👤 Harry J. Geyer
- 👤 Douglas G. Mitchell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:51
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4432; H10W20/425; H10W72/00; H10W72/01; H10W72/012; H10W72/01251; H10W72/01255; H10W72/019; H10W72/20; H10W72/251; H10W72/252; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12542; Y10T428/12549; Y10T428/12556; Y10T428/12569
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
119 words
A structure providing adhesion and barrier properties to a semiconductor substrate having a surface and a first conductor layer disposed on at least a portion of the surface of the semiconductor substrate, comprising: a passivation layer disposed on the surface of the substrate and the first conductor layer, and having at least one opening to the first conductor layer; a second conductor layer made of titanium-tungsten-nitride disposed on the first conductor layer through the opening of the passivation layer, and disposed on at least a portion of the passivation layer; a third conductor layer made of titanium-tungsten disposed on the second conductor layer, and; a fourth conductor layer made of a conductive metal disposed on the third conductor layer.
Claim 2
Dependent Claim
119 words
A structure providing adhesion and barrier properties to a semiconductor substrate having a surface and a first conductor layer disposed on at least a portion of the surface of the semiconductor substrate, comprising: a passivation layer disposed on the surface of the substrate and the first conductor layer, and having at least one opening to the first conductor layer; a second conductor layer made of titanium-tungsten-nitride disposed on the first conductor layer through the opening of the passivation layer, and disposed on at least a portion of the passivation layer; a third conductor layer made of titanium-tungsten disposed on the second conductor layer, and; a fourth conductor layer made of a conductive metal disposed on the third conductor layer.
Claim 3
Dependent Claim
11 words
The structure of claim 1 wherein the passivation layer comprises polyimide.
Claim 4
Dependent Claim
11 words
The structure of claim 1 wherein the passivation layer comprises glass.
Claim 5
Dependent Claim
12 words
The structure of claim 1 wherein the passivation layer comprises silicon nitride.
Claim 6
Dependent Claim
46 words
The structure of claim 1 wherein the thickness of the second conductor layer is approximately 1500 to 3000 angstroms, the thickness of the third conductor layer is approximately 500 to 1000 angstroms, and the thickness of the fourth conductor layer is approximately 2000 to 7000 angstroms.
Claim 7
Dependent Claim
33 words
The structure of claim 1 wherein the second conductor layer is disposed on the first conductor layer and passivation layer by sputtering titanium-tungsten with a gas mixture comprised of at least 30% nitrogen.
Claim 8
Dependent Claim
17 words
The structure of claim 1 wherein the first conductor layer is an aluminum or an aluminum alloy.
Claim 9
Dependent Claim
17 words
The structure of claim 1 further comprising a fifth conductor layer disposed on the fourth conductor layer.
Claim 10
Dependent Claim
20 words
The structure of claim 8 wherein the fourth conductor layer and the fifth conductor layer are made substantially of gold.
Claim 11
Dependent Claim
85 words
A structure used for providing electrical contact to a metal layer contacting at least a portion of a semiconductor substrate, comprising: a passivation layer disposed on the semiconductor substrate and the metal layer, and having at least one opening to the metal layer; a titanium-tungsten-nitride layer disposed on the metal layer through the opening of the passivation layer and disposed on a portion of the passivation layer; a titanium-tungsten layer disposed on the titanium-tungsten-nitride layer; and a first gold layer disposed on the titanium-tungsten layer.
Claim 12
Dependent Claim
85 words
A structure used for providing electrical contact to a metal layer contacting at least a portion of a semiconductor substrate, comprising: a passivation layer disposed on the semiconductor substrate and the metal layer, and having at least one opening to the metal layer; a titanium-tungsten-nitride layer disposed on the metal layer through the opening of the passivation layer and disposed on a portion of the passivation layer; a titanium-tungsten layer disposed on the titanium-tungsten-nitride layer; and a first gold layer disposed on the titanium-tungsten layer.
Claim 13
Dependent Claim
68 words
The structure of claim 10 further comprising a second gold layer on the first gold layer, wherein the thickness of the titanium-tungsten-nitride layer is approximately 1500 to 3000 angstroms, the thickness of the titanium-tungsten layer is approximately 500 to 1000 angstroms, the thickness of the first gold layer is approximately 2000 to 7000 angstroms, and the thickness of the second gold layer is approximately 20 to 25 microns.
Claim 14
Dependent Claim
32 words
The structure of claim 10 wherein the titanium-tungsten-nitride layer is disposed on the metal layer and the passivation layer by sputtering titanium-tungsten with a gas mixture comprised of at least 30% nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-13 | 1993-05-15 | 1993-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-13 | 1997-05-15 | 1997-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-13 | 2001-05-15 | 2001-11-14 | $7700.00 | Window Closed / Lapsed |