Patent US5583811A successfully refreshed from Google Patents.
US5583811A
Expired / Lapsed
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Transistor structure for erasable and programmable semiconductor memory devices
Assignee: Imec
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Filing: 1994-07-13
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Granted: 1996-12-10
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Expires: 2014-07-13
Abstract
Abstract A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate and an additional program gate in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to a high voltage onto the floating gate during programming so as to produce hot-electron injection at the split point in the channel region between the control gate and the floating gate. Submicrosecond programming at a 5 V drain voltage can thereby be achieved.
Inventors
- 👤 Jan Van Houdt
- 👤 Guido Groeseneken
- 👤 Herman Maes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 17:22
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0425; H; H10; H10B; H10B41/00; H10B41/40; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10D30/6891; H10D30/6892; H10B69/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
162 words
A programmable EEPROM cell structure for use as an erasable programmable semiconductor memory device, comprising: a semiconductor substrate including a source region, a drain region and a channel extending between said source and drain regions, with a drain voltage between said source and drain regions; a floating gate extending over a portion of the channel with a thin oxide layer therebetween; a control gate extending over a portion of said floating gate from above said source region to above said drain region through a dielectric oxide layer; and a program gate extending above said floating gate with a dielectric oxide layer therebetween, said program gate forming a capacitor with said floating gate with a coupling ratio sufficient to couple a voltage at least as high as said drain voltage to said floating gate, thereby establishing a high voltage at a point in said channel between said control gate and said floating gate and ensuring a high hot-electron injection towards said floating gate.
Claim 2
Dependent Claim
162 words
A programmable EEPROM cell structure for use as an erasable programmable semiconductor memory device, comprising: a semiconductor substrate including a source region, a drain region and a channel extending between said source and drain regions, with a drain voltage between said source and drain regions; a floating gate extending over a portion of the channel with a thin oxide layer therebetween; a control gate extending over a portion of said floating gate from above said source region to above said drain region through a dielectric oxide layer; and a program gate extending above said floating gate with a dielectric oxide layer therebetween, said program gate forming a capacitor with said floating gate with a coupling ratio sufficient to couple a voltage at least as high as said drain voltage to said floating gate, thereby establishing a high voltage at a point in said channel between said control gate and said floating gate and ensuring a high hot-electron injection towards said floating gate.
Claim 3
Dependent Claim
26 words
A structure as claimed in claim 1 wherein said floating gate includes a first portion extending from below said control gate to below said program gate.
Claim 4
Dependent Claim
15 words
A structure as claimed in claim 2 wherein said coupling ratio is at least 50%.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |