US4821236A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor nonvolatile memory
Assignee: SEIKI INSTRUMENTS & ELECTRONICS Ltd
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Filing: 1987-02-09
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Granted: 1989-04-11
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Expires: 2007-02-09
Abstract
Abstract A floating gate type semiconductor non-volatile memory injects carriers from a carrier supply region to a floating gate by a phenomenon called "punch-through" injection in which a space charge region is formed in a semiconductor substrate between the carrier supply region and a carrier injection region so as to accelerate the carriers and inject them into the floating gate without forwardly biasing the carrier injection region or the substrate.
Inventors
- 👤 Yutaka Hayashi
- 👤 Yoshikazu Kojima
- 👤 Masaaki Kamiya
- 👤 Kojiro Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/125; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/684; H10D30/685
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
215 words
A semiconductor non-volatile memory comprising: a first semiconductor region; a carrier supply region formed on a surface portion of said first semiconductor region; an injection region formed on another surface portion of said first semiconductor region; a first insulation film in contact with said injection region; a control region for controlling the potential of said injection region, said control region being formed so as to make contact with said injection region; a floating gate electrode formed on said first insulation film; a first control gate electrode for controlling the potential of said floating gate electrode through a second insulation flim; said regions being effective when suitably biased to establish a space charge region in said first semiconductor region, between said carrier supply region and said injection region, said space charge region being established by the potential difference between said injection region and said carrier supply region so as to accelerate carriers from said carrier supply region into said space charge region by the potential of said injection region such that the carriers reach the surface of said first semiconductor region at a sufficiently high energy state to cause some of the carriers to exceed the energy barrier formed between said first insulation film and said injection region and be injected into said floating gate electrode.
Claim 2
Dependent Claim
215 words
A semiconductor non-volatile memory comprising: a first semiconductor region; a carrier supply region formed on a surface portion of said first semiconductor region; an injection region formed on another surface portion of said first semiconductor region; a first insulation film in contact with said injection region; a control region for controlling the potential of said injection region, said control region being formed so as to make contact with said injection region; a floating gate electrode formed on said first insulation film; a first control gate electrode for controlling the potential of said floating gate electrode through a second insulation flim; said regions being effective when suitably biased to establish a space charge region in said first semiconductor region, between said carrier supply region and said injection region, said space charge region being established by the potential difference between said injection region and said carrier supply region so as to accelerate carriers from said carrier supply region into said space charge region by the potential of said injection region such that the carriers reach the surface of said first semiconductor region at a sufficiently high energy state to cause some of the carriers to exceed the energy barrier formed between said first insulation film and said injection region and be injected into said floating gate electrode.
Claim 3
Dependent Claim
50 words
A semiconductor non-volatile memory as claimed in claim 1, further comprising a second control gate electrode for controlling the potential of a space charge forming region for forming said space charge region, said second control gate electrode being formed on said space charge region through a third gate insulation film.
Claim 4
Dependent Claim
23 words
A semiconductor non-volatile memory as claimed in claim 2, wherein said control region and said first control gate region comprise a common region.
Claim 5
Dependent Claim
23 words
A semiconductor non-volatile memory as claimed in claim 1, wherein said control region and said first control gate region comprise a common region.
Claim 6
Dependent Claim
85 words
A semiconductor non-volatile memory as claimed in claim 1, wherein a distance 1 between said carrier supply region and said injection region is nearly equal to or shorter than the value of l p satisfying the equation V.sub.A /l.sub.p ·W.sub.p ≃2φ.sub.f, where V A represents the difference in potential between said carrier supply region and said injection region, W p represents the width of the depletion layer between said carrier supply region and said substrate, and φ f represents the Fermi level of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-10 | 1992-10-10 | 1993-04-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-10 | 1996-10-10 | 1997-04-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-10 | 2000-10-10 | 2001-04-11 | $7700.00 | Window Closed / Lapsed |