US4996668A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Erasable programmable memory
Assignee: Texas Instruments Inc
•
Filing: 1990-02-20
•
Granted: 1991-02-26
•
Expires: 2010-02-20
Abstract
Abstract EEPROM memories with crosspoint cells using buried source and drain lines plus merged floating gate transistors with floating gate coupling to control gate over the buried line insulator for high packing plus low voltage operation.
Inventors
- 👤 James L. Paterson
- 👤 Michael C. Smayling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:37
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0491; H; H10; H10B; H10B69/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
135 words
A nonvolatile memory cell, comprising: a first field insulating region on a first portion of the surface of said substrate; a first doped region in said substrate beneath said first field insulating regions, said first doped region providing a bit line connectable to other cells in a column; a second field insulating region in a second portion of said substrate, said second field insulating region being separated from said first insulating region by a channel region; a second doped region under said second field insulating region; a gate insulator on said channel region; a floating gate extending over said first field insulating region and onto said gate insulator; an interlevel insulating layer on said floating gate; and a control gate on said interlevel insulator, said control gate being connectable to other cells in a row.
Claim 2
Dependent Claim
135 words
A nonvolatile memory cell, comprising: a first field insulating region on a first portion of the surface of said substrate; a first doped region in said substrate beneath said first field insulating regions, said first doped region providing a bit line connectable to other cells in a column; a second field insulating region in a second portion of said substrate, said second field insulating region being separated from said first insulating region by a channel region; a second doped region under said second field insulating region; a gate insulator on said channel region; a floating gate extending over said first field insulating region and onto said gate insulator; an interlevel insulating layer on said floating gate; and a control gate on said interlevel insulator, said control gate being connectable to other cells in a row.
Claim 3
Dependent Claim
19 words
A nonvolatile memory cell as in claim 1 wherein said first, and second field insulating layers comprise silicon dioxide.
Claim 4
Dependent Claim
25 words
A nonvolatile memory cell as in claim 1 wherein said first and second doped regions are N type regions and said substrate is P type.
Claim 5
Dependent Claim
19 words
A nonvolatile memory cell as in claim 1 wherein said floating gate and said control gate comprise polycrystalline silicon.
Claim 6
Dependent Claim
152 words
An array of nonvolatile memory cells, each cell comprising: a first field insulating region on a first portion of the surface of a substrate extending the length of said array, said substrate having a first conductivity type; a first doped region in said substrate beneath said first field insulating regions extending the length of said array; a second field insulating region in a second portion of said substrate extending the; length of said array, said second field insulating region being separated from said first field insulating region by a channel region; a second doped region under said third field insulating region extending the length of said array; a gate insulator on said channel region; a floating gate extending over said first field insulating region and onto said gate insulator; an interlevel insulating layer on said floating gate; and a control gate extending the width of said array formed on said interlevel insulator.
Claim 7
Dependent Claim
152 words
An array of nonvolatile memory cells, each cell comprising: a first field insulating region on a first portion of the surface of a substrate extending the length of said array, said substrate having a first conductivity type; a first doped region in said substrate beneath said first field insulating regions extending the length of said array; a second field insulating region in a second portion of said substrate extending the; length of said array, said second field insulating region being separated from said first field insulating region by a channel region; a second doped region under said third field insulating region extending the length of said array; a gate insulator on said channel region; a floating gate extending over said first field insulating region and onto said gate insulator; an interlevel insulating layer on said floating gate; and a control gate extending the width of said array formed on said interlevel insulator.
Claim 8
Dependent Claim
19 words
A nonvolatile memory cell as in claim 5 wherein said first, and second field insulating layers comprise silicon dioxide.
Claim 9
Dependent Claim
25 words
A nonvolatile memory cell as in claim 5 wherein said first and second doped regions are N type regions and said substrate is P type.
Claim 10
Dependent Claim
19 words
A nonvolatile memory cell as in claim 5 wherein said floating gate and said control gate comprise polycrystalline silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-25 | 1994-08-27 | 1995-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-25 | 1998-08-27 | 1999-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-25 | 2002-08-27 | 2003-02-26 | $7700.00 | Window Closed / Lapsed |