Semiconductor integrated circuit device and production method thereof

Claim 1

A semiconductor integrated circuit device comprising a plurality of cells disposed on a semiconductor chip, each of said cells having a generally rectangular shape defined by first sides and second sides; wherein a first cell includes: a first signal input node, a second signal input node to be supplied with a second input signal having an opposite phase to that of a first signal to be supplied to the first signal input node, a third signal input node, a fourth signal input node to be supplied with a fourth signal having an opposite phase to that of a third signal to be supplied to the third signal input node, and fifth, sixth and seventh input signal nodes, a first junction node and a second junction node; a pass transistor circuit including a first active device of a first conduction type channel having a first source-drain path coupled between said first junction node and said seventh signal input node and having a first gate electrode coupled to said first signal input node, a second active device of the first conduction type channel having a second source drain path coupled between said first junction node and said second junction node and having a second gate electrode coupled to said second signal input node, a third active device of the first conduction type channel having a third source-drain path coupled between said second junction node and said sixth input node and having a third gate electrode coupled to said third signal input node, and a fourth active device of the first conduction type channel having a fourth source-drain path coupled between said second junction node and said fifth input node anal having a fourth gate electrode coupled to said fourth signal input node, and an inverter circuit including a fifth active device of the first conduction type channel and a sixth active device of a second conduction type channel, said fifth and sixth active devices having fifth and sixth gate electrodes coupled to each other and having fifth and sixth drain electrodes coupled to each other; and wherein said first cell has a first region of the first conductive type in which mid sixth active device is formed and a second region of the second conduction type in which said first, second, third, fourth and fifth active devices are formed, said first and second regions being juxtaposed to be adjacent in a direction parallel to said second sides of said rectangular cells, and in which first widths of said first and second regions as seen in a direction parallel to said first sides of said rectangular cells are equal, and a second width of said second region in the direction parallel to said second sides is larger than a second width of said first region in the direction parallel to said second sides.