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US4745084A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making a customized semiconductor integrated device

Assignee: Philips Semiconductors Inc
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Filing: 1986-11-12
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Granted: 1988-05-17
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Expires: 2006-11-12
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Abstract

Abstract A method of fabricating a plurality of electronic circuits with transistors in schematic form in a customizable semiconductor integrated device, such as a base array, is disclosed. The base array has a plurality of chains of continuously electrically connected transistors, all of the same type, with the drain of a transistor connected to the source of an adjacent transistor. The schematic transistors are grouped by diffusion line tracing to form a plurality of groups. Each group of schematic transistors is assigned to physical transistors in the base array. The cost function associated with each group of physical transistors is calculated. The total cost function is optimized by changing the assignment of one or more groups of the schematic transistors to the physical transistors. The electrical interconnection from one group of physical transistors to another group of physical transistors is routed to form the physical layout of the circuit. Isolation transistors are also provided to isolate physical layouts of the circuit from one another or to provide isolation between groups of physical transistors where isolation is needed. The gate of each isolation transistors is connected to a voltage source thereby isolating the physical layouts of the circuits.

Inventors

  • 👤 James A. Rowson
  • 👤 Stephen M. Trimberger

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 19:38
CPC Classifications
G; G06; G06F; G06F30/00; G06F30/30; G06F30/39; H; H10; H10D; H10D84/00; H10D84/90; H10D84/903; H10D84/907; H10W; H10W10/00; H10W10/01; H10W10/051; H10W10/50; H10W20/00; H10W20/40; H10W20/41; H10W20/43

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 173 words
A method of fabricating an electronic circuit, represented in netlist form and having a plurality of netlist transistors, in a customizable integrated semiconductor device in a substrate, comprising the steps of: forming a plurality of chains of continuously electrically connected transistors (hereinafter: "physical transistors"), each chain having physical transistors all of the same conductivity type, in said substrate, each physical transistor has a gate, a source, and a drain; electrically connecting the physical transistors to an adjacent physical transistor to form a continuous chain; grouping the netlist transistors by diffusion line tracing, forming a plurality of groups; assigning each group of netlist transistors to a group of physical transistors; calculating the cost function associated with each group of physical transistors; optimizing the total cost function by changing the assignment of one or more groups of said netlist transistors to said physical transistors and recalculating the cost function thereafter; and routing the electrical interconnection from one group of physical transistors to another group of physical transistors to form the physical layout of said circuit.
Claim 2
Independent Claim 173 words
A method of fabricating an electronic circuit, represented in netlist form and having a plurality of netlist transistors, in a customizable integrated semiconductor device in a substrate, comprising the steps of: forming a plurality of chains of continuously electrically connected transistors (hereinafter: "physical transistors"), each chain having physical transistors all of the same conductivity type, in said substrate, each physical transistor has a gate, a source, and a drain; electrically connecting the physical transistors to an adjacent physical transistor to form a continuous chain; grouping the netlist transistors by diffusion line tracing, forming a plurality of groups; assigning each group of netlist transistors to a group of physical transistors; calculating the cost function associated with each group of physical transistors; optimizing the total cost function by changing the assignment of one or more groups of said netlist transistors to said physical transistors and recalculating the cost function thereafter; and routing the electrical interconnection from one group of physical transistors to another group of physical transistors to form the physical layout of said circuit.
Claim 3
Dependent Claim 59 words
The method of claim 1, wherein said grouping step further comprises connecting the diffusion line of a netlist transistor of a first conductivity type with the diffusion lines of the netlist transistors of the same conductivity type until said line reaches ground, voltage source or a plurality of diffusion lines of the netlist transistors of the same conductivity type.
Claim 4
Dependent Claim 140 words
The method of claim 2, wherein said chains comprise a chain of P type physical transistors and a chain of N type physical transistors, each chain in a well, substantially parallel to and spaced apart from one another; each chain comprising a plurality of substantially rectangularly shaped diffusion regions, positioned in said substrate in an array, spaced apart from one another; a plurality of substantially rectangularly shaped gate regions, spaced apart from one another with each gate region lying substantially between a pair of adjacent drain-source regions; a plurality of tabularly shaped members, each spaced apart from one another, electrically connected to said gate regions and said drain-source regions; and each member which is connected to a gate region is positioned between adjacent members connected to drain-source regions, said tabularly shaped members providing for the interconnection to said physical transistors.
Claim 5
Dependent Claim 31 words
The method of claim 3 wherein said routing step further comprising placing electrical interconnect lines over said tabularly shaped members and extending an electrical connection between said lines and selected members.
Claim 6
Dependent Claim 97 words
The method of claim 4 wherein said routing step further comprising providing a cost penalty for placing electrical interconnect lines over said gate and drain-source regions, in the event no interconnect lines over said regions have been provided and in the event no gate connection has been provided; placing electrical interconnect lines over said gate and drain-source regions without any additional cost penalty to the extent an interconnect line has already been placed over said regions; and placing interconnect lines over gate connection regions without any additional cost penalty in the event that gate has been connected.
Claim 7
Dependent Claim 126 words
The method of claim 5 wherein said cost function associated with each group is calculated in accordance with Cost=K.sub.1 * a+K.sub.2 * b+K.sub.3 * c+K.sub.4 * d+K.sub.5 *(e-k.sub.6)+K.sub.7 *(e-k.sub.6)* * 2 where K 1 , K 2 , K 3 , K 4 , K 5 , K 6 and K 7 are tuning constants a--the smaller of the number of isolation transistors used in the P chain or the N chain. b--the larger of the number of isolation transistors used in the P chain or the N chain. c--number of direct lineal interconnection between the P chain and the N chain. d--sum of all the routes, where each route is the distance between the transistors at the extremes of that route. e--number of tracks needed.
Claim 8
Dependent Claim 27 words
The method of claim 1 further comprising fabricating a plurality of electronic circuits with each circuit represented in netlist form and having a plurality of netlist transistors.
Claim 9
Dependent Claim 45 words
The method of claim 7 further comprising the steps of: separating each physical layout of a circuit from one another where needed by an isolation transistor; and connecting the gate of each isolation transistor to a voltage source, thereby isolating physical layouts of said circuits.

References Cited (Backward Citations)

US4613940A Cited
US4580228A Cited
US4591993A Cited
US4627152A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-05-17 1991-11-16 1992-05-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-05-17 1995-11-16 1996-05-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-05-17 1999-11-16 2000-05-17 $7700.00 Window Closed / Lapsed

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