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US5571735A
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Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions
Assignee: NEC Corp
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Filing: 1995-06-16
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Granted: 1996-11-05
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Expires: 2015-06-16
Abstract
Abstract In a method of manufacturing a semiconductor device, a step (d) of forming metal silicide films (20) on source and drain regions (17, 18) and on gate electrodes (71, 81) comprises selectively depositing silicon thin films (19) on the source and drain regions and the gate electrodes, the silicon thin films having impurity concentration less than 10 19 cm -3 ; amorphizing the silicon thin films, the gate electrodes, and a silicon semiconductor substrate (11) by ion implantation; depositing a metal film on the silicon thin films, on the gate electrodes, and on the silicon semiconductor substrate; performing heat treatment of the metal film to form the metal silicide films (20) on the source and drain regions and the gate electrodes; and removing unreacted metal films (21) remaining on insulating films (16-1, 16-2). Preferably, the selectively depositing step may be performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas or silane gas.
Inventors
- 👤 Tohru Mogami
- 👤 Toru Tatsumi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/027; H10D30/0275; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
195 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming silicon gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, said silicon gate electrodes having an upper surface and a side surface; (b) forming insulating films on the side surface of said silicon gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions and on the upper surface of said silicon gate electrodes, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said silicon gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said silicon gate electrodes; (g) performing heat treatment of said metal film to form metal silicide films on said source and drain regions and on the upper surface of said silicon gate electrodes; and (h) removing unreacted metal films remaining on said insulating films.
Claim 2
Independent Claim
195 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming silicon gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, said silicon gate electrodes having an upper surface and a side surface; (b) forming insulating films on the side surface of said silicon gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions and on the upper surface of said silicon gate electrodes, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said silicon gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said silicon gate electrodes; (g) performing heat treatment of said metal film to form metal silicide films on said source and drain regions and on the upper surface of said silicon gate electrodes; and (h) removing unreacted metal films remaining on said insulating films.
Claim 3
Dependent Claim
28 words
A method as claimed in claim 1, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas.
Claim 4
Dependent Claim
28 words
A method as claimed in claim 1, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using silane gas.
Claim 5
Independent Claim
190 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, each of said gate electrodes consisting of a polysilicon film and a first metal silicide film, each of said gate electrodes having a side surface; (b) forming insulating films on the side surface of said gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said gate electrodes; (g) performing heat treatment of said metal film to form second metal silicide films on said source and drain regions; and (h) removing unreacted metal films remaining on said insulating films and on said gate electrodes.
Claim 6
Independent Claim
190 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, each of said gate electrodes consisting of a polysilicon film and a first metal silicide film, each of said gate electrodes having a side surface; (b) forming insulating films on the side surface of said gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said gate electrodes; (g) performing heat treatment of said metal film to form second metal silicide films on said source and drain regions; and (h) removing unreacted metal films remaining on said insulating films and on said gate electrodes.
Claim 7
Dependent Claim
28 words
A method as claimed in claim 4, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas.
Claim 8
Dependent Claim
28 words
A method as claimed in claim 4, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using silane gas.
Claim 9
Independent Claim
195 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, each of said gate electrodes consisting of a polysilicon film and a first metal silicide film, each of said silicon gates having an upper surface and a side surface; (b) forming insulating films on both of the upper surface and the side surface of said gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said gate electrodes; (g) performing heat treatment of said metal film to form second metal silicide films on said source and drain regions; and (h) removing unreacted metal films remaining on said insulating films.
Claim 10
Independent Claim
195 words
A method of manufacturing a semiconductor device comprising the steps of: (a) forming gate electrodes on gate insulating films on a silicon semiconductor substrate on which an element separation region is formed, each of said gate electrodes consisting of a polysilicon film and a first metal silicide film, each of said silicon gates having an upper surface and a side surface; (b) forming insulating films on both of the upper surface and the side surface of said gate electrodes; (c) performing ion implantation of impurities in the element separation region to form source and drain regions of N-channel type and P-channel type field effect transistors on said silicon semiconductor substrate; (d) selectively depositing silicon films on said source and drain regions, said silicon films having impurity concentration less than 10 19 cm -3 ; (e) amorphizing said silicon films, said gate electrodes, and said silicon semiconductor substrate by ion implantation; (f) depositing a metal film on said silicon films and on said gate electrodes; (g) performing heat treatment of said metal film to form second metal silicide films on said source and drain regions; and (h) removing unreacted metal films remaining on said insulating films.
Claim 11
Dependent Claim
28 words
A method as claimed in claim 7, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using disilane gas.
Claim 12
Dependent Claim
28 words
A method as claimed in claim 7, wherein said step (d) is performed by a chemical vapor deposition process of a reaction rate-determining mode by using silane gas.
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