US5236872A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
Assignee: US Philips Corp
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Filing: 1992-03-09
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Granted: 1993-08-17
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Expires: 2012-03-09
Abstract
Abstract A method of manufacturing a semiconductor device in which a thin buried silicide layer is formed by implantation includes the step of first forming an amorphous layer by implantation, which layer is then converted into the buried silicide layer by a heat treatment. A sufficiently thin buried silicide layer, of about 10 nm thickness, can be obtained in this manner, and the resulting structure is suitable, for example, for the manufacture of a metal-base transistor.
Inventors
- 👤 Alfred H. Van Ommen
- 👤 Jozef J. M. Ottenheim
- 👤 Erik H. A. Dekempeneer
- 👤 Gerrit C. van Hoften
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:33
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/012; H10D48/00; H10D48/01; H10D48/031; H10D48/032; H10P30/208; Y; Y10; Y10S; Y10S148/00; Y10S148/147
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
80 words
A method of manufacturing a semiconductor device, in which a buried metal silicide layer is formed in a monocrystalline silicon body, comprising: implanting ions of an element different from said metal in said silicon body to form a buried amorphous layer in said silicon body; then implanting metal ions in said buried amorphous layer; and then heat treating said silicon body so that said metal ions react with silicon in said amorphous layer to form said buried metal silicide layer.
Claim 2
Independent Claim
80 words
A method of manufacturing a semiconductor device, in which a buried metal silicide layer is formed in a monocrystalline silicon body, comprising: implanting ions of an element different from said metal in said silicon body to form a buried amorphous layer in said silicon body; then implanting metal ions in said buried amorphous layer; and then heat treating said silicon body so that said metal ions react with silicon in said amorphous layer to form said buried metal silicide layer.
Claim 3
Dependent Claim
16 words
A method as claimed in claim 1, wherein silicon ions are implanted in said silicon body.
Claim 4
Dependent Claim
19 words
A method as claimed in claim 1, wherein ions of a rare gas are implanted in said silicon body.
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein cobalt ions are implanted in said buried amorphous layer.
Claim 6
Dependent Claim
17 words
A method as claimed in claim 1, wherein nickel ions are implanted in said buried amorphous layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-08-16 | 1997-02-15 | 1997-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-08-16 | 2001-02-15 | 2001-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-08-16 | 2005-02-15 | 2005-08-17 | $7700.00 | Window Closed / Lapsed |