EP0259282A2
Expired / Lapsed
EP
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A method for producing thin conductive and semi-conductive layers in monocrystal silicon
Assignee: KTH Royal Institute of Technology
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Filing: 1987-07-21
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Granted: —
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Expires: 2007-07-21
Abstract
Abstract A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and subsequently causing the implanted metal atoms to be redistributed, to form a conductive or a semiconductive layer (16), by heat-treating the silicon substrate (15).
Inventors
- 👤 Sture Peterson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 04:49
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10W; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/024; Y10S148/083; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
67 words
A method for producing thin conductive or semiconductive layers embedded in silicon to form structures for integrated circuits and like devices, characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and by subjecting the silicon substrate (15) to heat treatment in a manner to re-distribute the implanted metal atoms so as to form a conductive or a semi-conductive layer (16).
Claim 2
Independent Claim
67 words
A method for producing thin conductive or semiconductive layers embedded in silicon to form structures for integrated circuits and like devices, characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-determined nominal depth, and by subjecting the silicon substrate (15) to heat treatment in a manner to re-distribute the implanted metal atoms so as to form a conductive or a semi-conductive layer (16).
Claim 3
Dependent Claim
27 words
A method according to Claim 1, characterized by implanting in the silicon substrate one of the metals Cobalt (Co), or nickel (Ni) to form a conductive layer.
Claim 4
Dependent Claim
33 words
A method according to Claim 1, characterized by implanting the silicon substrate with one of the metals Irridium (Ir), Iron (Fe), Chromium (Cr), Manganese (Mn) or Magnesium (Mg) to form a semiconductive layer.
Claim 5
Dependent Claim
27 words
A method according to Claim 1, 2 or 3, characterized by effecting said implantation with the aid of high-energy implantation with an energy of approximately 200-2000 keV.
Claim 6
Dependent Claim
32 words
A method according to Claim 1,2,3 or 4, characterized in that said heat treatment is carried out a temperature of approximately 600°C to 1000°C over a time period of about 60 minutes.
Claim 7
Dependent Claim
49 words
A method according to Claim 1,2,3,4 or 5, characterized in that when the implanted metal forms with silicon a compound which occupies a smaller specific volume than silicon, silicon atoms are caused to be implanted to the same depth as the metal prior to carrying out said heat treatment.
Claim 8
Dependent Claim
32 words
A method according to Claim 1,2,3,4,5 or 6, characterized by carrying out said implantation with the aid of a mask, which optionally comprises metallized patterned layers incorporated in the structure under construction.
Claim 9
Dependent Claim
18 words
A method according to Claim 1,2,3,4,5,6 or 7, characterized by implanting the metal atoms in a monocrystalline silicon.
Claim 10
Independent Claim
63 words
A method according to Claims 1,2,3,4,5,6,7 or 8, characterized in that after said implantation and heat treatment processes, a metal (31) is deposited on the silicon substrate (20), which is then caused to react, through heat treatment, with silicon in the silicon substrate (20) from the surface of said substrate down to the conductive layer (29) or semiconductive layer formed by said implantation.
References Cited (Backward Citations)
No citation records indexed.
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