US5569932A
Expired / Lapsed
US
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Porous silicon carbide (SIC) semiconductor device
Assignee: Kulite Semiconductor Products Inc
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Filing: 1995-01-23
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Granted: 1996-10-29
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Expires: 2015-01-23
Abstract
Abstract Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.
Inventors
- 👤 Joseph S. Shor
- 👤 Anthony D. Kurtz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D8/00; H10H20/01; H10H20/011; H10H20/014; H10P; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
23 words
A semiconductor device employing at least one layer of a semiconducting porous silicon carbide (SiC), said layer being of a first conductivity type.
Claim 2
Dependent Claim
23 words
A semiconductor device employing at least one layer of a semiconducting porous silicon carbide (SiC), said layer being of a first conductivity type.
Claim 3
Dependent Claim
13 words
The semiconductor device according to claim 1, wherein said layer is monocrystalline SiC.
Claim 4
Dependent Claim
19 words
The semiconductor device according to claim 1, wherein pores of said layer are less than 1 micron in diameter.
Claim 5
Dependent Claim
20 words
The semiconductor device according to claim 1, wherein pores of said layer are between 10 and 100 nm in diameter.
Claim 6
Dependent Claim
20 words
The semiconductor device according to claim 1, further including a thin passivation layer on the surface of said porous layer.
Claim 7
Dependent Claim
15 words
The semiconductor device according to claim 5, wherein said passivation layer is SiO 2 .
Claim 8
Dependent Claim
20 words
The semiconductor device according to claim 5, wherein said porous layer has a pore spacing of less than 10 nm.
Claim 9
Dependent Claim
18 words
The semiconductor device according to claim 1, wherein said device is an optoelectronic device capable of UV luminescence.
Claim 10
Dependent Claim
15 words
The semiconductor device according to claim 8, where said optoelectronic device is a light source.
Claim 11
Dependent Claim
20 words
The semiconductor device according to claim 9 where said light source emits light in the ultraviolet portion of the spectrum.
Claim 12
Dependent Claim
20 words
The semiconductor device according to claim 9 where said light source emits light in the visible portion of the spectrum.
Claim 13
Dependent Claim
20 words
The semiconductor device according to claim 9 where said light source emits light in the blue portion of the spectrum.
Claim 14
Dependent Claim
14 words
The semiconductor device according to claim 8 wherein said optoelectronic device is a photodetector.
Claim 15
Dependent Claim
47 words
An SiC-on-insulator structure comprising: at least one layer of SiC of a given conductivity type, an insulating layer of SiO 2 , said layer of SiC being positioned on said insulating layer and said insulating layer being formed by oxidizing a substrate or layer of porous silicon.
Claim 16
Dependent Claim
47 words
An SiC-on-insulator structure comprising: at least one layer of SiC of a given conductivity type, an insulating layer of SiO 2 , said layer of SiC being positioned on said insulating layer and said insulating layer being formed by oxidizing a substrate or layer of porous silicon.
Claim 17
Dependent Claim
19 words
The structure of claim 14, wherein said insulating layer of SiO 2 is densifted by a thermal annealing process.
Claim 18
Dependent Claim
21 words
A semiconductor material comprising at least one layer of porous SiC formed by anodizing a given conductivity type SiC layer electrochemically.
Claim 19
Dependent Claim
21 words
A semiconductor material comprising at least one layer of porous SiC formed by anodizing a given conductivity type SiC layer electrochemically.
Claim 20
Dependent Claim
13 words
The semiconductor material according to claim 16 where said porous layer is monocrystalline.
Claim 21
Dependent Claim
14 words
The semiconductor material according to claim 17 wherein said porous layer is UV luminescent.
Claim 22
Dependent Claim
17 words
The semiconductor material according to claim 16, wherein said porous layer is passivated with an insulating layer.
Claim 23
Dependent Claim
15 words
The semiconductor material according to claim 19 wherein said insulating layer is SiO 2 .
Claim 24
Dependent Claim
15 words
The semiconductor material according to claim 19 wherein said pores and pore spacings are submicron.
Claim 25
Dependent Claim
19 words
The semiconductor material according to claim 16, wherein spacings between pores of said layer are less than 10 nm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-29 | 2000-04-29 | 2000-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-29 | 2004-04-29 | 2004-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-29 | 2008-04-29 | 2008-10-29 | $7700.00 | Window Closed / Lapsed |