US5298767A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Porous silicon carbide (SiC) semiconductor device
Assignee: Kulite Semiconductor Products Inc
•
Filing: 1992-10-06
•
Granted: 1994-03-29
•
Expires: 2012-10-06
Abstract
Abstract A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.
Inventors
- 👤 Joseph S. Shor
- 👤 Anthony D. Kurtz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D8/00; H10H20/01; H10H20/011; H10H20/014; H10P; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
36 words
A semiconductor device employing at least one layer of a semiconducting porous silicon carbide (SiC), said layer of SiC being of a first conductivity type and having an average pore spacing of less than one micron.
Claim 2
Dependent Claim
36 words
A semiconductor device employing at least one layer of a semiconducting porous silicon carbide (SiC), said layer of SiC being of a first conductivity type and having an average pore spacing of less than one micron.
Claim 3
Dependent Claim
12 words
The device according to claim 1, wherein said layer is n-type SiC.
Claim 4
Dependent Claim
12 words
The device according to claim 1, wherein said layer is p-type SiC.
Claim 5
Dependent Claim
12 words
The device according to claim 1, wherein said layer is monocrystalline SiC.
Claim 6
Dependent Claim
53 words
A semiconductor p-n junction comprising a layer of n-type SiC positioned on a p-type layer of SiC, with said p-type layer positioned on a layer of silicon dioxide, wherein at least one layer of SiC is porous, said at least one porous layer having an average pore spacing of less than one micron.
Claim 7
Dependent Claim
53 words
A semiconductor p-n junction comprising a layer of n-type SiC positioned on a p-type layer of SiC, with said p-type layer positioned on a layer of silicon dioxide, wherein at least one layer of SiC is porous, said at least one porous layer having an average pore spacing of less than one micron.
Claim 8
Dependent Claim
19 words
The p-n junction according to claim 5, wherein said p- and n layers are formed by chemical vapor deposition.
Claim 9
Dependent Claim
20 words
A semiconductor material comprising at least one layer of monocrystalline SiC formed by anodizing a given conductivity SiC layer electrochemically.
Claim 10
Dependent Claim
20 words
A semiconductor material comprising at least one layer of monocrystalline SiC formed by anodizing a given conductivity SiC layer electrochemically.
Claim 11
Dependent Claim
35 words
A semiconductor material comprising at least one layer of porous monocrystalline SiC formed by anodizing a first conductivity type SiC layer electrochemically, said porous layer having an average pore spacing of less than one micron.
Claim 12
Dependent Claim
35 words
A semiconductor material comprising at least one layer of porous monocrystalline SiC formed by anodizing a first conductivity type SiC layer electrochemically, said porous layer having an average pore spacing of less than one micron.
Claim 13
Dependent Claim
15 words
The semiconductor material according to claim 7, wherein said conductivity is p or n type.
Claim 14
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said average pore spacing is from 5 to 100 nm.
Claim 15
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said average pore spacing is less than 10 nm.
Claim 16
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said layer of SiC has pores of quantum dimension.
Claim 17
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said layer of SiC has a microcrystalline porous structure.
Claim 18
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said device is a p-n junction diode.
Claim 19
Dependent Claim
22 words
A semiconductor device according to claim 14, wherein the p-n junction of said p-n junction diode is comprised of monocrystalline SiC layers.
Claim 20
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said device is a UV optoelectronic device.
Claim 21
Dependent Claim
15 words
A semiconductor device according to claim 1, wherein said layer of SiC is UV luminescent.
Claim 22
Dependent Claim
25 words
The semiconductor p-n junction according to claim 5, wherein each porous layer of SiC has an average pore spacing of from 5 to 100 nm.
Claim 23
Dependent Claim
16 words
The semiconductor p-n junction according to claim 5, at least one layer of SiC is monocrystalline.
References Cited (Backward Citations)
US3308356A
Cited
US3396059A
Cited
US4028149A
Cited
US4531142A
Cited
US4525429A
Cited
US4897710A
Cited
US5063421A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-28 | 1997-09-27 | 1998-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-28 | 2001-09-27 | 2002-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-28 | 2005-09-27 | 2006-03-29 | $7700.00 | Window Closed / Lapsed |