Method for fabricating solid state image sensor device having buried type photodiode

Claim 1

A method for fabricating a solid state image sensor device, said method comprising the steps of: forming a mask above a first conductivity type semiconductor layer using a lithographic technique; forming, in said first conductivity type semiconductor layer, a second conductivity type semiconductor region serving as a photoelectric conversion section by ion implantation using said mask; and forming, in a surface area of said second conductivity type semiconductor region, a first conductivity type semiconductor region using said mask and selected angles of incidence during ion implantation so that said first conductivity type semiconductor region is self-aligned with respect to said second conductivity type semiconductor region.

Claim 2

A method for fabricating a solid state image sensor device, said method comprising the steps of: forming a mask above a first conductivity type semiconductor layer using a lithographic technique; forming, in said first conductivity type semiconductor layer, a second conductivity type semiconductor region serving as a photoelectric conversion section by ion implantation using said mask; and forming, in a surface area of said second conductivity type semiconductor region, a first conductivity type semiconductor region using said mask and selected angles of incidence during ion implantation so that said first conductivity type semiconductor region is self-aligned with respect to said second conductivity type semiconductor region.

Claim 8

A method for fabricating a solid state image sensor device including a photoelectric conversion section which has, in a surface area of a semiconductor layer of a first conductivity type, a semiconductor region of a second conductivity type, and a semiconductor region of the first conductivity type in a surface area of said semiconductor region of the second conductivity type, for fixing a surface potential to a reference level; a signal electron transfer section for transferring a signal electron generated at said photoelectric conversion section, said signal electron transfer section being formed within a surface area of said semiconductor layer of the first conductivity type; and a signal electron read-out section for reading-out said signal electron from said photoelectric conversion section to said signal electron transfer section, said signal electron read-out section being formed within said surface area of said semiconductor layer of the first conductivity type, said method comprising the steps of: forming a mask above said semiconductor layer of the first conductivity type using a lithographic technique; forming, within said first surface area of said semiconductor layer of the first conductivity type, said semiconductor region of the second conductivity type by ion-implantation with a first angle of incidence using said mask formed on said semiconductor layer of the first conductivity type; and forming, in said surface area of said semiconductor region of the second conductivity type, said semiconductor region of the first conductivity type using said mask with a second angle of incidence greater than said first angle of incidence so that said semiconductor region is self-aligned with respect to said semiconductor region of the second conductivity type with a shift in a lateral direction opposite to said signal electron read-out section being provided therebetween.

Claim 9

A method for fabricating a solid state image sensor device including a photoelectric conversion section which has, in a surface area of a semiconductor layer of a first conductivity type, a semiconductor region of a second conductivity type, and a semiconductor region of the first conductivity type in a surface area of said semiconductor region of the second conductivity type, for fixing a surface potential to a reference level; a signal electron transfer section for transferring a signal electron generated at said photoelectric conversion section, said signal electron transfer section being formed within a surface area of said semiconductor layer of the first conductivity type; and a signal electron read-out section for reading-out said signal electron from said photoelectric conversion section to said signal electron transfer section, said signal electron read-out section being formed within said surface area of said semiconductor layer of the first conductivity type, said method comprising the steps of: forming a mask above said semiconductor layer of the first conductivity type using a lithographic technique; forming, within said first surface area of said semiconductor layer of the first conductivity type, said semiconductor region of the second conductivity type by ion-implantation with a first angle of incidence using said mask formed on said semiconductor layer of the first conductivity type; and forming, in said surface area of said semiconductor region of the second conductivity type, said semiconductor region of the first conductivity type using said mask with a second angle of incidence greater than said first angle of incidence so that said semiconductor region is self-aligned with respect to said semiconductor region of the second conductivity type with a shift in a lateral direction opposite to said signal electron read-out section being provided therebetween.

Claim 14

A method for fabricating a solid state image sensor device, said method comprising the steps of: forming a mask above a first conductivity type semiconductor layer using a lithographic technique; forming, in said first conductivity type semiconductor layer, a second conductivity type semiconductor region serving as a photoelectric conversion section by ion implantation using said mask; forming, in a surface area of said second conductivity type semiconductor region, a first conductivity type semiconductor region using said mask used and selected angles of incidence during the ion implantation so that said first conductivity type semiconductor region is self-aligned with respect to said second conductivity type semiconductor region; removing said mask formed on said first conductivity type semiconductor layer; and forming a conductive electrode for reading-out an electron signal from said photoelectric conversion section to a signal transfer section, which lies over a part of said first conductivity type semiconductor region, a region from said second conductivity type semiconductor region remaining at said surface area to said signal transfer section, and a part of an element isolation region, with an insulating film being interposed therebetween.

Claim 15

A method for fabricating a solid state image sensor device, said method comprising the steps of: forming a mask above a first conductivity type semiconductor layer using a lithographic technique; forming, in said first conductivity type semiconductor layer, a second conductivity type semiconductor region serving as a photoelectric conversion section by ion implantation using said mask; forming, in a surface area of said second conductivity type semiconductor region, a first conductivity type semiconductor region using said mask used and selected angles of incidence during the ion implantation so that said first conductivity type semiconductor region is self-aligned with respect to said second conductivity type semiconductor region; removing said mask formed on said first conductivity type semiconductor layer; and forming a conductive electrode for reading-out an electron signal from said photoelectric conversion section to a signal transfer section, which lies over a part of said first conductivity type semiconductor region, a region from said second conductivity type semiconductor region remaining at said surface area to said signal transfer section, and a part of an element isolation region, with an insulating film being interposed therebetween.

Claim 16

A method for fabricating a solid state image sensor device including a photoelectric conversion section which has, in a first surface area of a semiconductor layer of a first conductivity type, a semiconductor region of a second conductivity type, and a semiconductor region of the first conductivity type in a surface area of said semiconductor region of the second conductivity type, for fixing a surface potential to a reference level; a signal electron transfer section for transferring a signal electron generated at said photoelectric conversion section, said signal transfer section being formed within a surface area of said semiconductor layer of the first conductivity type; and a signal electron read-out section for reading-out said signal electron from said photoelectric conversion section to said signal electron transfer section, said signal electron read-out section being formed within said surface area of said semiconductor layer of the first conductivity type, said method comprising the steps of: forming a mask above said semiconductor layer of the first conductivity type using a lithographic technique; forming, within said first surface area of said semiconductor layer of the first conductivity type, said semiconductor region of the second conductivity type by ion-implantation with a first angle of incidence using said mask formed on said semiconductor layer of the first conductivity type; forming, in said surface area of said semiconductor region of the second conductivity type, said semiconductor region of the first conductivity type using said mask with a second angle of incidence greater than said first angle of incidence so that said semiconductor region is self-aligned with respect to said semiconductor region of the second conductivity type with a shift in a lateral direction opposite to said signal electron read-out section being provided therebetween; removing said mask formed on said semiconductor layer of the first conductivity type; and forming a conductive electrode for reading-out a signal electron from said photoelectric conversion section to said signal transfer section, said conductive electrode lying over a part of said semiconductor region of the first conductivity type, a region from said semiconductor region of the second conductivity type remaining at said surface area to said signal transfer section, and a part of an element isolation region, with an insulating film being interposed therebetween.

Claim 17

A method for fabricating a solid state image sensor device including a photoelectric conversion section which has, in a first surface area of a semiconductor layer of a first conductivity type, a semiconductor region of a second conductivity type, and a semiconductor region of the first conductivity type in a surface area of said semiconductor region of the second conductivity type, for fixing a surface potential to a reference level; a signal electron transfer section for transferring a signal electron generated at said photoelectric conversion section, said signal transfer section being formed within a surface area of said semiconductor layer of the first conductivity type; and a signal electron read-out section for reading-out said signal electron from said photoelectric conversion section to said signal electron transfer section, said signal electron read-out section being formed within said surface area of said semiconductor layer of the first conductivity type, said method comprising the steps of: forming a mask above said semiconductor layer of the first conductivity type using a lithographic technique; forming, within said first surface area of said semiconductor layer of the first conductivity type, said semiconductor region of the second conductivity type by ion-implantation with a first angle of incidence using said mask formed on said semiconductor layer of the first conductivity type; forming, in said surface area of said semiconductor region of the second conductivity type, said semiconductor region of the first conductivity type using said mask with a second angle of incidence greater than said first angle of incidence so that said semiconductor region is self-aligned with respect to said semiconductor region of the second conductivity type with a shift in a lateral direction opposite to said signal electron read-out section being provided therebetween; removing said mask formed on said semiconductor layer of the first conductivity type; and forming a conductive electrode for reading-out a signal electron from said photoelectric conversion section to said signal transfer section, said conductive electrode lying over a part of said semiconductor region of the first conductivity type, a region from said semiconductor region of the second conductivity type remaining at said surface area to said signal transfer section, and a part of an element isolation region, with an insulating film being interposed therebetween.