US4980735A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging element
Assignee: Mitsubishi Electric Corp
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Filing: 1989-10-03
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Granted: 1990-12-25
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Expires: 2009-10-03
Abstract
Abstract A solid state imaging element includes a first conductivity type semiconductor substrate, a light-electricity conversion section for generating electrical charges in response to incident light including a second conductivity type layer disposed in the semiconductor substrate, a charge storage section having a layer of the second conductivity type disposed in the substrate for storing signal charges from the light-electricity conversion, transfer section for transferring signal charges from the storatge section, a first conductivity type layer disposed at the surface of substrate over the light-electricity conversion section and the charge storage section, and a light shielding film covering the transfer section wherein the concentration of dopant impurities in the charge storage section is higher than that in the light-electricity conversion section.
Inventors
- 👤 Masao Yamawaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 01:17
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/63; H04N25/70; H04N25/71; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
197 words
A solid state imaging element comprising: a first conductivity type semiconductor substrate having a surface; a light to electricity conversion section for generating electrical charges in response to light incident on the surface; a charge storage section for storing charges generated by the light to electricity conversion section; a transfer section for transferring electrical charges stored in said storage section; a first second conductivity type region containing dopant impurities and disposed in the substrate underlying the light to electricity and charge storage sections; a second second conductivity type region containing dopant impurities and disposed in the substrate underlying the transfer section and the storage section and intersecting the first second conductivity type region at least in the storage section; a first conductivity type layer disposed in the substrate at the surface overlying the first and second second conductivity type regions of the light to electricity conversion section and the charge storage section; and a light shielding film disposed covering the transfer section and the charge storage section wherein the concentration of the dopant impurities in the second second conductivity type region is higher than the concentration of the dopant impurities in the first second conductivity type region.
Claim 2
Dependent Claim
197 words
A solid state imaging element comprising: a first conductivity type semiconductor substrate having a surface; a light to electricity conversion section for generating electrical charges in response to light incident on the surface; a charge storage section for storing charges generated by the light to electricity conversion section; a transfer section for transferring electrical charges stored in said storage section; a first second conductivity type region containing dopant impurities and disposed in the substrate underlying the light to electricity and charge storage sections; a second second conductivity type region containing dopant impurities and disposed in the substrate underlying the transfer section and the storage section and intersecting the first second conductivity type region at least in the storage section; a first conductivity type layer disposed in the substrate at the surface overlying the first and second second conductivity type regions of the light to electricity conversion section and the charge storage section; and a light shielding film disposed covering the transfer section and the charge storage section wherein the concentration of the dopant impurities in the second second conductivity type region is higher than the concentration of the dopant impurities in the first second conductivity type region.
Claim 3
Dependent Claim
21 words
A solid state imaging element as defined in claim 1 wherein said first conductivity type semiconductor substrate comprises P type silicon.
Claim 4
Dependent Claim
19 words
A solid state imaging element as defined in claim 1 wherein said transfer section comprises a Charge Coupled Device.
Claim 5
Dependent Claim
62 words
A solid state imaging element as defined in claim 3 wherein the dopant impurity concentration in the first second conductivity type region is N 1 , the dopant impurity concentration in the second second conductivity type region is N 2 , and the dopant concentration in the intersection of the regions in the charge storage section is N 1 +N 2 .
Claim 6
Dependent Claim
56 words
A solid state imaging element as defined in claim 3 wherein the first and second regions intersect in the transfer storage section and the dopant impurity concentration in the first second conductivity type region is N 3 , and the dopant impurity concentrations in the charge storage, and transfer sections are N 3 +N 4 .
Claim 7
Dependent Claim
22 words
A solid state imaging element as defined in claim 1 wherein said transfer comprises a MOS transistor switch and a scanning circuit.
Claim 8
Dependent Claim
17 words
A solid state imaging element as defined in claim 1 wherein said light shielding film comprises aluminum.
Claim 9
Dependent Claim
33 words
A solid state imaging element as defined in claim 1 including a plurality of light to electricity conversion sections and a charge storage section for each of said light to electricity conversion sections.
Claim 10
Dependent Claim
23 words
A solid state imaging element as defined in claim 8 wherein said light to electricity conversion sections are arranged in a linear array.
Claim 11
Dependent Claim
23 words
A solid state imaging element as defined in claim 8 wherein said light to electricity conversion sections are arranged in a two-dimensional array.
References Cited (Backward Citations)
US4724470A
Cited
JPS5544712A
Cited
JPS55163882A
Cited
US4389661A
Cited
JPS5728232A
Cited
US4447735A
Cited
JPS57106177A
Cited
JPS57181275A
Cited
US4554571A
Cited
US4597013A
Cited
US4618874A
Cited
JPS60198773A
Cited
US4716466A
Cited
JPS6276669A
Cited
JPS62230273A
Cited
JPS62265757A
Cited
JPS62269353A
Cited
US4794279A
Cited
JPS62296463A
Cited
US4866496A
Cited
US4907050A
Cited
US4788592A
Cited
JPS63296268A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-24 | 1994-06-25 | 1994-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-24 | 1998-06-25 | 1998-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-24 | 2002-06-25 | 2002-12-25 | $7700.00 | Window Closed / Lapsed |