Abstract A solid state image sensor is disclosed which includes a photosensitive region consisting of a group of first vertical shift registers formed of a plurality of charge transfer devices, photoelectric converting sections electrically separated from one other by a channel stop section between adjacent ones of the first vertical shift registers and capable of accumulating a signal charge and devices transferring the signal charge of the photoelectric converting sections to corresponding one of the first vertical shift registers, a storage section consisting of a group of second vertical shift registers electrically connected to one ends of the first vertical shift registers, respectively, a charge transfer horizontal shift register electrically connected to one ends of the second vertical shift registers, a section for transferring undesired charges within the first vertical shift registers during a vertical blanking period after a light receiving period, a section for transferring the signal charge from the photoelectric converting sections to the first vertical shift registers, and a section for transferring a remaining charge determined by the signal charge again from the photoelectric converting sections to the first vertical shift registers after the signal charge is transferred from the first vertical shift registers to the second vertical shift register groups.
A solid state image sensor comprising: a photosensitive region consisting of a group of first vertical shift registers formed of a plurality of charge transfer devices, photoelectric converting sectitons electrically separated from each other by channel stop means between adjacent ones of said first vertical shift registers and capable of accumulating a signal charge and devices transferring the signal charge of said photoelectric converting sections to corresponding one of said first vertical shift registers; a storage section consisting of a group of second verticl shift registers electrically connected to one ends of said first vertical shift registers, respectively; a charge transfer horizontal shift register electrically connected to one ends of said second vertical shift registers; first means for transferring undesired charges within said first vertical shift registers, second means for transferring the signal charge from said photoelectric converting sections to said first vertical shift registers; third means for transferring the signal charge from said first vertical shift registers to said second vertical shift register groups; and said second means for transferring operating a second time within a vertical blanking period after a light receiving period to transferring a remaining charge resulting from said signal charge in said photoelectric converting sections to said first verticl shift registers during in which said signal charges are read into said first vertical shift registers said vertical blanking period.
Claim 2
Dependent Claim
224 words
A solid state image sensor comprising: a photosensitive region consisting of a group of first vertical shift registers formed of a plurality of charge transfer devices, photoelectric converting sectitons electrically separated from each other by channel stop means between adjacent ones of said first vertical shift registers and capable of accumulating a signal charge and devices transferring the signal charge of said photoelectric converting sections to corresponding one of said first vertical shift registers; a storage section consisting of a group of second verticl shift registers electrically connected to one ends of said first vertical shift registers, respectively; a charge transfer horizontal shift register electrically connected to one ends of said second vertical shift registers; first means for transferring undesired charges within said first vertical shift registers, second means for transferring the signal charge from said photoelectric converting sections to said first vertical shift registers; third means for transferring the signal charge from said first vertical shift registers to said second vertical shift register groups; and said second means for transferring operating a second time within a vertical blanking period after a light receiving period to transferring a remaining charge resulting from said signal charge in said photoelectric converting sections to said first verticl shift registers during in which said signal charges are read into said first vertical shift registers said vertical blanking period.
Claim 3
Dependent Claim
22 words
A solid state image sensor according to claim 1, wherein said photoelectric converting sections are formed of a PN junction type sensor.
Claim 4
Dependent Claim
27 words
A solid state image sensor according to claim 1, wherein the signal charge of said second vertical shift registers is read out through said horizontal shift register.