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US4447735A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge-coupled type solid-state image sensor

Assignee: Panasonic Holdings Corp
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Filing: 1981-12-17
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Granted: 1984-05-08
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Expires: 2001-12-17
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Abstract

Abstract In a solid-state image sensor of the type comprising an image pickup region comprising photosensor element arrays and charge transfer arrays, a charge storage region and a read-out region, two or more charge storage arrays are provided for each of the charge transfer arrays. The number of transfer electrodes in each of the charge storage arrays can be reduced to 1/n, where n is the number of charge storage arrays for each charge transfer array, as compared with the case in which one charge storage array is provided for each charge transfer array. As a consequence, the area of the charge storage region on a chip can be considerably reduced and the reduction of the transfer charge signal can be improved; that is, the error rate can be reduced.

Inventors

  • 👤 Kenju Horii

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 07:58
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 205 words
A charge-coupled type solid-state image sensor, comprising a semiconductor substrate having formed thereon: an image pickup region comprising photosensor element arrays and charge transfer arrays coupled thereto for generating and accumulating signal charge in response to a light image impinging on said photosensor element arrays; a plurality of charge storage regions each comprising at least two parallel-connected charge storage arrays; first transfer switching gate means interposed between said charge transfer arrays and said charge storage region for coupling charge from each charge transfer array to a corresponding one of each of said charge storage arrays so that said signal charge is sequentially transferred into the charge storage arrays of each said corresponding charge storage region, i.e. into one array of each corresponding charge storage region at a time; a readout region; and second transfer switching gate means coupled between said charge storage regions and said readout region for sequentially transferring signal charge from each array of a corresponding charge storage region to said readout region in a first-in-first-out manner, so that signal charge is read out from one charge storage array of each corresponding charge storage region while signal charge remains in at least one other charge storage array of said corresponding charge storage region.
Claim 2
Dependent Claim 205 words
A charge-coupled type solid-state image sensor, comprising a semiconductor substrate having formed thereon: an image pickup region comprising photosensor element arrays and charge transfer arrays coupled thereto for generating and accumulating signal charge in response to a light image impinging on said photosensor element arrays; a plurality of charge storage regions each comprising at least two parallel-connected charge storage arrays; first transfer switching gate means interposed between said charge transfer arrays and said charge storage region for coupling charge from each charge transfer array to a corresponding one of each of said charge storage arrays so that said signal charge is sequentially transferred into the charge storage arrays of each said corresponding charge storage region, i.e. into one array of each corresponding charge storage region at a time; a readout region; and second transfer switching gate means coupled between said charge storage regions and said readout region for sequentially transferring signal charge from each array of a corresponding charge storage region to said readout region in a first-in-first-out manner, so that signal charge is read out from one charge storage array of each corresponding charge storage region while signal charge remains in at least one other charge storage array of said corresponding charge storage region.
Claim 3
Dependent Claim 27 words
A charge-coupled type solid-state image sensor according to claim 1, wherein at least one of said charge storage regions comprises at least 3 parallel-connected charge storage arrays.

References Cited (Backward Citations)

US3932775A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-05-08 1987-11-07 1988-05-08 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-05-08 1991-11-07 1992-05-08 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-05-08 1995-11-07 1996-05-08 $7700.00 Window Closed / Lapsed

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