Patent US5566045A successfully refreshed from Google Patents.
US5566045A
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US
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High-dielectric-constant material electrodes comprising thin platinum layers
Assignee: Entegris Inc
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Filing: 1994-08-01
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Granted: 1996-10-15
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Expires: 2014-08-01
Abstract
Abstract A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
Inventors
- 👤 Scott R. Summerfelt
- 👤 Howard R. Beratan
- 👤 Peter S. Kirlin
- 👤 Bruce E. Gnade
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:16
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
121 words
A method of forming a microelectronic capacitor, said method comprising: (a) forming a high-dielectric-constant material pillar, said pillar comprising an outer vertical surface and an open-ended cavity with an inner vertical surface; (b) forming an inner thin platinum film on said inner vertical surface and an outer thin platinum film on said outer vertical surface; and (c) forming an inner non-platinum conductive electrode on said inner thin platinum film and an outer non-platinum conductive electrode on said outer thin platinum film, wherein said inner and outer conductive electrodes are selected from the group consisting off conductive nitrides, high melting point noble or platinum group metals, tin oxide, titanium oxide, TiON, osmium oxide, rhodium oxide, iridium oxide, indium oxide, and combinations thereof.
Claim 2
Independent Claim
121 words
A method of forming a microelectronic capacitor, said method comprising: (a) forming a high-dielectric-constant material pillar, said pillar comprising an outer vertical surface and an open-ended cavity with an inner vertical surface; (b) forming an inner thin platinum film on said inner vertical surface and an outer thin platinum film on said outer vertical surface; and (c) forming an inner non-platinum conductive electrode on said inner thin platinum film and an outer non-platinum conductive electrode on said outer thin platinum film, wherein said inner and outer conductive electrodes are selected from the group consisting off conductive nitrides, high melting point noble or platinum group metals, tin oxide, titanium oxide, TiON, osmium oxide, rhodium oxide, iridium oxide, indium oxide, and combinations thereof.
Claim 3
Dependent Claim
79 words
The method according to claim 1, said step (a) further comprising: (a1) forming a pillar mask having a sidewall and a top surface, on a capacitor plug in an insulating layer; (a2) conformally depositing a high-dielectric-constant material layer on said insulating layer, and on said sidewall and top surface of said pillar mask; (a3) anisotropically removing said high-dielectric-constant material layer from said insulating layer and from said top surface of said pillar mask; and (a4) removing said pillar mask.
Claim 4
Dependent Claim
16 words
The method according to claim 1 wherein said inner and outer conductive electrodes comprise titanium nitride.
Claim 5
Dependent Claim
14 words
The method according to claim 1, wherein said inner and outer electrodes comprise Ti-Al-N.
Claim 6
Dependent Claim
15 words
The method according to claim 1, wherein said inner and outer electrodes comprise amorphous Ti-Si-N.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said inner and outer electrodes comprise palladium.
Claim 8
Dependent Claim
51 words
The method according to claim 1, wherein said high-dielectric-constant material pillar is selected from the group consisting of: barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
Claim 9
Dependent Claim
20 words
The method according to claim 1, wherein said inner and outer thin platinum films arc less than 35 nm thick.
Claim 10
Dependent Claim
22 words
The method according to claim 8, wherein said inner and outer thin platinum films are between 5 nm and 25 nm thick.
Claim 11
Dependent Claim
22 words
The method according to claim 9, wherein said inner and outer thin platinum films are between 10 nm and 20 nm thick.
Claim 12
Dependent Claim
116 words
A microelectronic capacitor comprising: (a) a high-dielectric-constant material pillar, said pillar comprising an outer vertical surface and an open-ended cavity with an inner vertical surface; (b) an inner thin platinum on disposed on said inner vertical surface and an outer thin platinum on disposed on said outer vertical surface; and (c) an inner non-platinum conductive electrode disposed on said inner thin platinum film and an outer non-platinum conductive electrode disposed on said outer thin platinum film, wherein said inner and outer conductive electrodes are selected from the group consisting of: conductive nitrides, high melting point noble or platinum group metals, tin oxide, titanium oxide, TiON, osmium oxide, rhodium oxide, iridium oxide, indium oxide, and combinations thereof.
Claim 13
Dependent Claim
116 words
A microelectronic capacitor comprising: (a) a high-dielectric-constant material pillar, said pillar comprising an outer vertical surface and an open-ended cavity with an inner vertical surface; (b) an inner thin platinum on disposed on said inner vertical surface and an outer thin platinum on disposed on said outer vertical surface; and (c) an inner non-platinum conductive electrode disposed on said inner thin platinum film and an outer non-platinum conductive electrode disposed on said outer thin platinum film, wherein said inner and outer conductive electrodes are selected from the group consisting of: conductive nitrides, high melting point noble or platinum group metals, tin oxide, titanium oxide, TiON, osmium oxide, rhodium oxide, iridium oxide, indium oxide, and combinations thereof.
Claim 14
Dependent Claim
14 words
The structure of claim 11, wherein said inner and outer electrodes comprise titanium nitride.
Claim 15
Dependent Claim
13 words
The structure of claim 11, wherein said inner and outer electrodes comprise Ti-Al-N.
Claim 16
Dependent Claim
14 words
The structure of claim 11, wherein said inner and outer electrodes comprise amorphous Ti-Si-N.
Claim 17
Dependent Claim
13 words
The structure of claim 11, wherein said inner and outer electrodes comprise palladium.
Claim 18
Dependent Claim
50 words
The structure of claim 11, wherein said high-dielectric-constant material pillar is selected from the group consisting of: barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
Claim 19
Dependent Claim
19 words
The structure of claim 11, wherein said inner and outer thin platinum films are less than 35 nm thick.
Claim 20
Dependent Claim
21 words
The structure of claim 17, wherein said inner and outer thin platinum films are between 5 nm and 25 nm thick.
Claim 21
Dependent Claim
21 words
The structure of claim 18, wherein said inner and outer thin platinum films are between 10 nm and 20 nm thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-15 | 2000-04-15 | 2000-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-15 | 2004-04-15 | 2004-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-15 | 2008-04-15 | 2008-10-15 | $7700.00 | Window Closed / Lapsed |