US5561076A
Expired / Lapsed
US
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Method of fabricating an isolation region for a semiconductor device using liquid phase deposition
Assignee: NEC Electronics Corp
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Filing: 1995-01-26
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Granted: 1996-10-01
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Expires: 2015-01-26
Abstract
Abstract The invention provides a method of fabricating a semiconductor device on an SOI substrate having a single crystal silicon substrate, a silicon dioxide film laid on top of the silicon substrate and a single crystal silicon layer laid on top of the silicon dioxide film. The method includes the steps of forming a single crystal silicon island composed of the single crystal silicon layer in a first region in which the semiconductor device is to be fabricated, and selectively forming a low temperature deposition silicon dioxide film in a second region in which the semiconductor device is not to be fabricated in the presence of photoresist, so that the low temperature deposition silicon dioxide film covers side surfaces of the silicon island. The second region turns into an isolation region for electrically separating adjacent semiconductor devices.
Inventors
- 👤 Akira Yoshino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:29
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P90/1908; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
185 words
A method of fabricating a semiconductor device on an SOI wafer having a substrate, a silicon dioxide film on top of said substrate and a silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said silicon layer located in a second region other than said first region by using reactive ion etching in which said photoresist works as a mask to form a silicon island composed of a portion of said silicon layer only in said first region; forming a deposition silicon dioxide film in areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolated region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist; removing said photoresist; and forming a gate oxide film only on an exposed surface of said silicon island.
Claim 2
Independent Claim
185 words
A method of fabricating a semiconductor device on an SOI wafer having a substrate, a silicon dioxide film on top of said substrate and a silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said silicon layer located in a second region other than said first region by using reactive ion etching in which said photoresist works as a mask to form a silicon island composed of a portion of said silicon layer only in said first region; forming a deposition silicon dioxide film in areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolated region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist; removing said photoresist; and forming a gate oxide film only on an exposed surface of said silicon island.
Claim 3
Dependent Claim
35 words
The method in accordance with claim 1, wherein said liquid phase deposition process is performed by using at least aqueous hydrosilicofluoric acid (H 2 SiF 6 ) and boric acid (H 3 BO 3 ).
Claim 4
Independent Claim
196 words
A method of fabricating a semiconductor device on an SOI wafer having a substrate, a silicon dioxide film on top of said substrate and a silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said silicon layer located in a second region other than said first region by using reactive ion etching in which said photoresist works as a mask to form a silicon island composed of a portion of said silicon layer only in said first region; forming a deposition silicon dioxide film in areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolated region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist, said deposition silicon dioxide film being thicker than said silicon island; removing said photoresist; and forming a gate oxide film only on an exposed surface of said silicon island.
Claim 5
Independent Claim
196 words
A method of fabricating a semiconductor device on an SOI wafer having a substrate, a silicon dioxide film on top of said substrate and a silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said silicon layer located in a second region other than said first region by using reactive ion etching in which said photoresist works as a mask to form a silicon island composed of a portion of said silicon layer only in said first region; forming a deposition silicon dioxide film in areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolated region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist, said deposition silicon dioxide film being thicker than said silicon island; removing said photoresist; and forming a gate oxide film only on an exposed surface of said silicon island.
Claim 6
Dependent Claim
22 words
The method in accordance with claim 1, wherein said substrate is selected from a single crystal silicon quartz substrate or glass substrate.
Claim 7
Dependent Claim
34 words
The method in accordance with claim 1, wherein said silicon layer is a single crystal silicon layer and said silicon island is a single crystal silicon island composed of said single crystal silicon layer.
Claim 8
Dependent Claim
31 words
The method in accordance with claim 1, wherein said silicon layer is a polycrystalline silicon layer and said silicon island is a polycrystalline silicon island composed of said polycrystalline silicon layer.
Claim 9
Independent Claim
203 words
A method of fabricating a semiconductor device on an SOI wafer having a single crystal silicon substrate, a silicon dioxide film on top of said silicon substrate and a single crystal silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said single crystal silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said single crystal silicon layer located in a second region other than said first region by using a reactive ion etching in which said photoresist works as a mask to form a single crystal silicon island comprised of a portion of said single crystal silicon layer only in said first region; forming a deposition silicon dioxide film in selected areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolation region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist; removing said photoresist; and forming a gate oxide film only on an exposed surface of said single crystal silicon island.
Claim 10
Independent Claim
203 words
A method of fabricating a semiconductor device on an SOI wafer having a single crystal silicon substrate, a silicon dioxide film on top of said silicon substrate and a single crystal silicon layer on top of said silicon dioxide film, comprising the steps of: applying photoresist to an upper surface of said single crystal silicon layer and patterning said photoresist to leave said photoresist only on a first region in which said semiconductor device is to be fabricated; removing said single crystal silicon layer located in a second region other than said first region by using a reactive ion etching in which said photoresist works as a mask to form a single crystal silicon island comprised of a portion of said single crystal silicon layer only in said first region; forming a deposition silicon dioxide film in selected areas in said second region by using liquid phase deposition (LPD) while leaving said photoresist on said silicon island to thereby form an isolation region having said deposition silicon dioxide film in said second region without forming said deposition silicon dioxide film on said photoresist; removing said photoresist; and forming a gate oxide film only on an exposed surface of said single crystal silicon island.
Claim 11
Dependent Claim
25 words
The method in accordance with claim 7, wherein said deposition silicon dioxide film is thicker than said single crystal silicon island by about 20-30 nanometers.
References Cited (Backward Citations)
JPS5864045A
Cited
US4468420A
Cited
US4596071A
Cited
US4916086A
Cited
US4851078A
Cited
US5036021A
Cited
JPH01181439A
Cited
US4927781A
Cited
JPH0376249A
Cited
US5024965A
Cited
JPH03270254A
Cited
US5196373A
Cited
JPH04103146A
Cited
JPH04106954A
Cited
JPH04245662A
Cited
JPH0661343A
Cited
US5453395A
Cited
US5472902A
Cited
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