US5559052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit fabrication with interlevel dielectric
Assignee: Nokia of America Corp
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Filing: 1994-12-29
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Granted: 1996-09-24
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Expires: 2014-12-29
Abstract
Abstract An interlevel dielectric comprised of phosphorus-doped glass surrounding the second polysilicon level of an SRAM cell is disclosed. The second polysilicon is generally a cell local interconnect. The phosphorus-doped glass layer efficiently getters sodium from underlying layers. The phosphorus-doped glass layer is utilized although another doped gettering layer may be used at a higher level of the circuit.
Inventors
- 👤 Kuo-Hua Lee
- 👤 Chen-Hua D. Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:53
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; Y; Y10; Y10S; Y10S257/00; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
84 words
A method of integrated circuit fabrication comprising; forming a gate upon a substrate; forming a first dielectric layer over said gate; forming a first patterned conductor upon said first dielectric; forming a second doped dielectric over said patterned conductor and over said first dielectric; heating said second doped dielectric to attract sodium ions; forming a second patterned conductor over said second doped dielectric; and forming a third doped dielectric overlying said second patterned conductor, said third doped dielectric being capable of gettering sodium ions.
Claim 2
Independent Claim
84 words
A method of integrated circuit fabrication comprising; forming a gate upon a substrate; forming a first dielectric layer over said gate; forming a first patterned conductor upon said first dielectric; forming a second doped dielectric over said patterned conductor and over said first dielectric; heating said second doped dielectric to attract sodium ions; forming a second patterned conductor over said second doped dielectric; and forming a third doped dielectric overlying said second patterned conductor, said third doped dielectric being capable of gettering sodium ions.
Claim 3
Dependent Claim
23 words
The method of claim 1 in which a fourth undoped dielectric is formed between said second patterned conductor and said third doped dielectric.
Claim 4
Dependent Claim
18 words
The method of claim 1 in which a fifth undoped dielectric is formed over said third doped dielectric.
Claim 5
Dependent Claim
20 words
The method of claim 3 in which at least one level of metallization is formed over said fifth undoped dielectric.
Claim 6
Dependent Claim
13 words
The method of claim 1 in which said integrated circuit includes an SRAM.
Claim 7
Dependent Claim
25 words
The method of claim 1 in which said second doped dielectric is made from a material chosen from the group consisting of p-glass and PE-PTEOS.
Claim 8
Dependent Claim
21 words
The method of claim 1 in which said second doped dielectric is heated to a temperature between 800° and 850° C.
Claim 9
Dependent Claim
20 words
The method of claim 1 in which said gate and said first and second patterned conductors are formed from polysilicon.
Claim 10
Dependent Claim
17 words
The method of claim 8 in which at least one of said conductors has an overlying silicide.
References Cited (Backward Citations)
JPS5555538A
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JPS5632732A
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JPS5728335A
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JPS5756221A
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JPS6074550A
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US4731346A
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US4589928A
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JPS6195533A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-24 | 2000-03-25 | 2000-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-24 | 2004-03-25 | 2004-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-24 | 2008-03-25 | 2008-09-24 | $7700.00 | Window Closed / Lapsed |