Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To dissolve step differences and to flatten the surface layer of an interlayer insulating layer by a method wherein phosphorus is selectively introduced in th protruded parts of the interlayer insulating layer and the protruded parts are removed by selectively performing an etching. CONSTITUTION:A field insulating film 2, a first-layer wiring 3, an insulating film 4 between the first and second layers, a second-layer wiring 5 and an insulating film 6 between the second and third layers are formed on a semiconductor substrate 1, and a resist film 7 is performed a spin coating. Phosphorus is ion-implanted with prescribed implantation energy and the protruded parts only of a silicon dioxide layer 6 are converted into phosphorus-containing silicon dioxide layers 6'. The resist film 7 is removed and when a wet etching is performed using hydrofluoric acid, the phosphorus-containing silicon dioxide 6' are dissolved and removed, and the step differences of the surface of the silicon dioxide layer 6 are reduced. A third-layer wiring 8 and an insulating film 9 between the third and fourth layers are successively formed thereon.

Inventors

• 👤 Akihiro Nakagawa
• 👤 中川　明宏

Bibliographic Details