Semiconductor device

Abstract

Abstract PURPOSE: To obtain a passivation film which is unlikely to be polarized when moisture is absorbed in the film, by alternately stratifying SiO 2 films containing no phosphorus and SiO 2 films containing phosphorus with one another. CONSTITUTION: An SiO 2 film 3, an aluminium wiring layer 4, oxide films 8, 8' containing no phosphorus and a PSG film 9 vitrified by doping a phosphorus oxide are provided on a silicon substrate 1. At least two such SiO 2 films are provided and the PSG film 9 is interposed between the SiO 2 films, thereby manufacturing a passivation film. To prevent polarization, it is preferable to use no-phosphorus-doped SiO 2 films. If the thickness of a no-phosphorus-doped SiO 2 film is continuously increased, cracking takes place and moisture invades and a protecting property is lost. In fact, the SiO 2 films are slternately stratified with one another to increase their total thickness. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Tatsumi Shirasu

Bibliographic Details