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US5559042A
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Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-07-12
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Granted: 1996-09-24
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Expires: 2014-07-12
Abstract
Abstract A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 17:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10D88/00; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
85 words
A method of forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a semiconductor film on said insulating film; forming a groove in said insulating film and said semiconductor film to form an island portion thereof; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 2
Independent Claim
85 words
A method of forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a semiconductor film on said insulating film; forming a groove in said insulating film and said semiconductor film to form an island portion thereof; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the formation of said insulating film and said semiconductor film is carried out at a temperature at which said insulating film does not contract.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein said thermal treatment is carried out at a temperature at which said insulating film contracts.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said insulating film is contracted at a ratio of 30 to 500 ppm during said contracting step.
Claim 8
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a groove in said insulating film to form an island portion thereof; forming a semiconductor film on said insulating film; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 9
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a groove in said insulating film to form an island portion thereof; forming a semiconductor film on said insulating film; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 10
Dependent Claim
27 words
The method of claim 7 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 11
Dependent Claim
20 words
The method of claim 7 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.
Claim 12
Dependent Claim
17 words
The method of claim 7 wherein said insulating film has a thickness of 50 to 1000 nm.
Claim 13
Independent Claim
68 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface; forming a non-single crystalline semiconductor layer on said glass layer; and heating said non-single crystalline semiconductor layer and said glass layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 14
Independent Claim
68 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface; forming a non-single crystalline semiconductor layer on said glass layer; and heating said non-single crystalline semiconductor layer and said glass layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 15
Dependent Claim
27 words
The method of claim 11 wherein said glass layer comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 16
Dependent Claim
20 words
The method of claim 11 wherein said non-single crystalline semiconductor layer is crystallized at the same time during said heating.
Claim 17
Independent Claim
75 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface, said glass layer containing hydrogen at 10-30 atomic % therein; forming a non-single crystalline semiconductor layer on said glass layer; heating said glass layer and said semiconductor layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 18
Independent Claim
75 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface, said glass layer containing hydrogen at 10-30 atomic % therein; forming a non-single crystalline semiconductor layer on said glass layer; heating said glass layer and said semiconductor layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 19
Dependent Claim
26 words
The method of claim 14 wherein the formation of said semiconductor layer is carried out at such a temperature that said glass layer does not contract.
References Cited (Backward Citations)
JPS5544789A
Cited
US4763183A
Cited
US4786952A
Cited
US4875086A
Cited
US4933298A
Cited
US5049968A
Cited
JPH0335523A
Cited
JPH0480914A
Cited
US5254208A
Cited
US5250444A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-24 | 2000-03-25 | 2000-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-24 | 2004-03-25 | 2004-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-24 | 2008-03-25 | 2008-09-24 | $7700.00 | Window Closed / Lapsed |