Rapid plasma hydrogenation process for polysilicon MOSFETs

Claim 1

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to plasma hydrogenation to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen escapes from said semiconductor body; and (c) maintaining said hydrogenation plasma while said semiconductor body is cooled to a temperature at which out-diffusion is substantially avoided.

Claim 2

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to plasma hydrogenation to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen escapes from said semiconductor body; and (c) maintaining said hydrogenation plasma while said semiconductor body is cooled to a temperature at which out-diffusion is substantially avoided.

Claim 3

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to plasma hydrogenation to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen escapes from said semiconductor body; (c) maintaining said hydrogenation plasma at said hydrogenation temperature for a period of time sufficient to obtain substantial equilibrium of said hydrogen in-diffusion and out-diffusion relative to said semiconductor body; and (d) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled to a temperature at which out-diffusion is substantially avoided.

Claim 4

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to plasma hydrogenation to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen escapes from said semiconductor body; (c) maintaining said hydrogenation plasma at said hydrogenation temperature for a period of time sufficient to obtain substantial equilibrium of said hydrogen in-diffusion and out-diffusion relative to said semiconductor body; and (d) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled to a temperature at which out-diffusion is substantially avoided.

Claim 5

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to a hydrogenation plasma to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a temperature within the range of about 400° C. to about 800° C.; and (c) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled to a temperature within the range of about 25° C. to about 375° C.

Claim 6

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to a hydrogenation plasma to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a temperature within the range of about 400° C. to about 800° C.; and (c) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled to a temperature within the range of about 25° C. to about 375° C.

Claim 7

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to a hydrogenation plasma to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a temperature of about 435° C. for a period of time not greater than about 30 minutes; and (c) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled a temperature of about 325° C. over a period not greater than about 30 minutes.

Claim 8

A method of manufacturing a semiconductor device which comprises the steps of (a) providing a semiconductor body capable of undergoing hydrogen in-diffusion and hydrogen out-diffusion at selected temperatures; (b) subjecting said semiconductor body to a hydrogenation plasma to effect in-diffusion of atomic hydrogen, said in-diffusion being effected at a temperature of about 435° C. for a period of time not greater than about 30 minutes; and (c) maintaining said semiconductor body in contact with said hydrogenation plasma while said semiconductor body is cooled a temperature of about 325° C. over a period not greater than about 30 minutes.