Hydrogen plasma treatment of polycrystalline silicon thin film transistor

Abstract

Abstract PURPOSE:To make it possible to obtain superior characteristics more effectively by a method wherein a hydrogen plasma treatment takes place between a heat treatment process and a process of forming a source electrode and drain elec trode. CONSTITUTION:A hydrogen plasma treatment takes place between a heat treat ment process and a source electrode and drain electrode forming process. That is, as there is no such a heat treatment process as to excede about 400 deg.C after the hydrogen plasma treatment, there is no exhaust of hydrogen taken in a poly Si thin film at all. Accordingly, the deterioration of the characteristics of a hydrogenated poly Si thin film transistor, which is caused by progressing the processes, is prevented. Thereby, the superior characteristics can be obtained and moreover, as the hydrogen plasma treatment takes place before the forma tion of source and drain electrodes, there is no damage to the surfaces of the source and drain electrodes at all and the adverse effect to wire bonding is also dissolved.

Inventors

• 👤 Satoshi Takenaka

Bibliographic Details