US5559042A
Expired / Lapsed
US
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Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-07-12
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Granted: 1996-09-24
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Expires: 2014-07-12
Abstract
Abstract A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 16:00
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0227; H10D86/0229; H10D88/00; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
85 words
A method of forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a semiconductor film on said insulating film; forming a groove in said insulating film and said semiconductor film to form an island portion thereof; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 2
Independent Claim
85 words
A method of forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a semiconductor film on said insulating film; forming a groove in said insulating film and said semiconductor film to form an island portion thereof; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the formation of said insulating film and said semiconductor film is carried out at a temperature at which said insulating film does not contract.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein said thermal treatment is carried out at a temperature at which said insulating film contracts.
Claim 7
Dependent Claim
23 words
The method of claim 1 wherein said insulating film is contracted at a ratio of 30 to 500 ppm during said contracting step.
Claim 8
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a groove in said insulating film to form an island portion thereof; forming a semiconductor film on said insulating film; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 9
Independent Claim
81 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate an insulating film having the property of contracting in thermal treatment; forming a groove in said insulating film to form an island portion thereof; forming a semiconductor film on said insulating film; contracting said insulating film by subjecting said insulating film to thermal treatment; providing a gate oxide layer on a surface of said semiconductor film; and providing a gate electrode on said gate oxide layer.
Claim 10
Dependent Claim
27 words
The method of claim 7 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 11
Dependent Claim
20 words
The method of claim 7 wherein said substrate comprises a material selected from the group consisting of insulator and semiconductor.
Claim 12
Dependent Claim
17 words
The method of claim 7 wherein said insulating film has a thickness of 50 to 1000 nm.
Claim 13
Independent Claim
68 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface; forming a non-single crystalline semiconductor layer on said glass layer; and heating said non-single crystalline semiconductor layer and said glass layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 14
Independent Claim
68 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface; forming a non-single crystalline semiconductor layer on said glass layer; and heating said non-single crystalline semiconductor layer and said glass layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 15
Dependent Claim
27 words
The method of claim 11 wherein said glass layer comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.
Claim 16
Dependent Claim
20 words
The method of claim 11 wherein said non-single crystalline semiconductor layer is crystallized at the same time during said heating.
Claim 17
Independent Claim
75 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface, said glass layer containing hydrogen at 10-30 atomic % therein; forming a non-single crystalline semiconductor layer on said glass layer; heating said glass layer and said semiconductor layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 18
Independent Claim
75 words
A method for manufacturing a semiconductor device comprising the steps of: forming a glass layer on a surface, said glass layer containing hydrogen at 10-30 atomic % therein; forming a non-single crystalline semiconductor layer on said glass layer; heating said glass layer and said semiconductor layer in order to contract said glass layer; providing a gate oxide layer on a surface of said semiconductor layer; and providing a gate electrode on said gate oxide layer.
Claim 19
Dependent Claim
26 words
The method of claim 14 wherein the formation of said semiconductor layer is carried out at such a temperature that said glass layer does not contract.
References Cited (Backward Citations)
JPS5544789A
Cited
US4763183A
Cited
US4786952A
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US4875086A
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US4933298A
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US5049968A
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JPH0335523A
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JPH0480914A
Cited
US5254208A
Cited
US5250444A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-24 | 2000-03-25 | 2000-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-24 | 2004-03-25 | 2004-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-24 | 2008-03-25 | 2008-09-24 | $7700.00 | Window Closed / Lapsed |