Patent US4460477A successfully refreshed from Google Patents.
Patent US5554064A successfully refreshed from Google Patents.
US5554064A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Orbital motion chemical-mechanical polishing apparatus and method of fabrication
Assignee: Intel Corp
•
Filing: 1993-08-06
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Granted: 1996-09-10
•
Expires: 2013-08-06
Abstract
Abstract A method and apparatus for polishing a thin film formed on a semiconductor substrate. A table covered with a polishing pad is orbited about an axis. Slurry is fed through a plurality of spaced-apart holes formed through the polishing pad to uniformly distribute slurry across the pad surface during polishing. A substrate is pressed face down against the orbiting pad's surface and rotated to facilitate, along with the slurry, the polishing of the thin film formed on the substrate.
Inventors
- 👤 Joseph R. Breivogel
- 👤 Samuel F. Louke
- 👤 Michael R. Oliver
- 👤 Leopoldo D. Yau
- 👤 Christopher E. Barns
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:53
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/04; B24B37/07; B24B37/10; B24B37/105; B24B37/11; B24B37/20; B24B37/26; B24B57/00; B24B57/02
Claims Analysis
Total Claims: 57
Claim 1
Independent Claim
107 words
A method of polishing a thin film formed on a first surface of a substrate comprising the steps of: forcibly pressing a polishing pad that is coupled to a flexible diaphragm together with said first surface for a period of time such that said polishing pad substantially conforms to said first surface wherein said polishing pad has an orbital motion with respect to said substrate; depositing slurry onto said flexible polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and removing said substrate from said polishing pad after polishing.
Claim 2
Independent Claim
107 words
A method of polishing a thin film formed on a first surface of a substrate comprising the steps of: forcibly pressing a polishing pad that is coupled to a flexible diaphragm together with said first surface for a period of time such that said polishing pad substantially conforms to said first surface wherein said polishing pad has an orbital motion with respect to said substrate; depositing slurry onto said flexible polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and removing said substrate from said polishing pad after polishing.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the radius of said orbital motion is less than the radius of said substrate.
Claim 4
Dependent Claim
25 words
The method of claim 1 further comprising the step of offsetting the center of said polishing pad from the center of said substrate during polishing.
Claim 5
Dependent Claim
20 words
The method of claim 1 further comprising the step of rotating said substrate relative to said polishing pad during polishing.
Claim 6
Dependent Claim
140 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a flexible diaphragm: a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for orbiting said polishing pad about an axis, wherein the radius of the orbit of said polishing pad about said axis is less then the radius of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad, wherein the center of said wafer is offset from said axis and wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 7
Dependent Claim
140 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a flexible diaphragm: a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for orbiting said polishing pad about an axis, wherein the radius of the orbit of said polishing pad about said axis is less then the radius of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad, wherein the center of said wafer is offset from said axis and wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 8
Dependent Claim
27 words
The chemical-mechanical polishing apparatus of claim 5 wherein said polishing pad has a plurality of preformed grooves, said preformed grooves facilitating uniform distribution of said abrasive slurry.
Claim 9
Independent Claim
159 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having a first upper surface and a first lower surface wherein a depression is formed in the first upper surface of said table; a flexible polishing diaphragm having a second upper surface and a second lower surface wherein said polishing pad is attached to said second upper surface, said second lower surface of said flexible polishing diaphragm being attached to the first upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing for forcibly pressing said polishing pad against said substrate: means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing.
Claim 10
Independent Claim
159 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having a first upper surface and a first lower surface wherein a depression is formed in the first upper surface of said table; a flexible polishing diaphragm having a second upper surface and a second lower surface wherein said polishing pad is attached to said second upper surface, said second lower surface of said flexible polishing diaphragm being attached to the first upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing for forcibly pressing said polishing pad against said substrate: means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing.
Claim 11
Dependent Claim
26 words
The apparatus of claim 7 wherein said polishing pad has a plurality of preformed grooves, said preformed grooves helping to facilitate uniform distribution of said slurry.
Claim 12
Dependent Claim
18 words
The apparatus of claim 7 wherein said substrate carrier rotates said substrate against said polishing pad during polishing.
Claim 13
Dependent Claim
20 words
The apparatus of claim 7 further comprising a urethane pad backing attached between said polishing pad and said polishing diaphragm.
Claim 14
Dependent Claim
58 words
The apparatus of claim 7 further comprising: a slurry diaphragm having an upper and a lower surface, said slurry diaphragm placed in said chamber and attached between said table and said polishing diaphragm; a meshing placed between the upper surface of said slurry diaphragm and said polishing diaphragm, said meshing for uniformly distributing slurry about said polishing diaphragm.
Claim 15
Dependent Claim
16 words
The chemical-mechanical polishing apparatus of claim 5 wherein said substrate carrier rotates said substrate during polishing.
Claim 16
Dependent Claim
150 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a semiconductor substrate having a first diameter, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a second diameter and a plurality of through holes positioned radially along said polishing pad, said second diameter being slightly larger than said first diameter; means for orbiting said polishing pad about an axis, wherein the radius of the orbit of said polishing pad about said axis is less then the radius of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 17
Dependent Claim
150 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a semiconductor substrate having a first diameter, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a second diameter and a plurality of through holes positioned radially along said polishing pad, said second diameter being slightly larger than said first diameter; means for orbiting said polishing pad about an axis, wherein the radius of the orbit of said polishing pad about said axis is less then the radius of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 18
Dependent Claim
17 words
The apparatus of claim 13 wherein said substrate is rotated relative to said polishing pad during polishing.
Claim 19
Dependent Claim
16 words
The apparatus of claim 13 wherein the center of said wafer is offset from said axis.
Claim 20
Independent Claim
133 words
A method of polishing a thin film on a semiconductor substrate comprising the steps of: providing a polishing pad coupled to a flexible diaphragm, said polishing pad having a diameter that is slightly larger than the diameter of said substrate; orbiting said polishing pad about an axis wherein the radius of the orbit of said polishing pad about said axis is less than the radius of said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and forcibly pressing said substrate and said polishing pad together wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in the planarization of said thin film.
Claim 21
Independent Claim
133 words
A method of polishing a thin film on a semiconductor substrate comprising the steps of: providing a polishing pad coupled to a flexible diaphragm, said polishing pad having a diameter that is slightly larger than the diameter of said substrate; orbiting said polishing pad about an axis wherein the radius of the orbit of said polishing pad about said axis is less than the radius of said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and forcibly pressing said substrate and said polishing pad together wherein the orbiting movement of said polishing pad relative to said substrate together with said slurry results in the planarization of said thin film.
Claim 22
Dependent Claim
19 words
The method of claim 16 further comprising the step of offsetting the center of said wafer from said axis.
Claim 23
Dependent Claim
25 words
The method of claim 16 further comprising the step of offsetting the center of said polishing pad from the center of said substrate during polishing.
Claim 24
Dependent Claim
20 words
The method of claim 16 further comprising the step of rotating said substrate relative to said polishing pad during polishing.
Claim 25
Independent Claim
174 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having an upper surface and a lower surface wherein a depression is formed in the upper surface of said table; a flexible polishing diaphragm attached to the upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing, said polishing pad attached above said polishing diaphragm; a urethane pad backing attached between said polishing pad and said polishing diaphragm; means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing; and a substrate carrier for forcibly pressing said substrate against said polishing pad such that said movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 26
Independent Claim
174 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having an upper surface and a lower surface wherein a depression is formed in the upper surface of said table; a flexible polishing diaphragm attached to the upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing, said polishing pad attached above said polishing diaphragm; a urethane pad backing attached between said polishing pad and said polishing diaphragm; means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing; and a substrate carrier for forcibly pressing said substrate against said polishing pad such that said movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 27
Dependent Claim
26 words
The apparatus of claim 20 wherein said polishing pad has a plurality of preformed grooves, said preformed grooves helping to facilitate uniform distribution of said slurry.
Claim 28
Dependent Claim
18 words
The apparatus of claim 20 wherein said substrate carrier rotates said substrate against said polishing pad during polishing.
Claim 29
Dependent Claim
58 words
The apparatus of claim 20 further comprising: a slurry diaphragm having an upper and a lower surface, said slurry diaphragm placed in said chamber and attached between said table and said polishing diaphragm; a meshing placed between the upper surface of said slurry diaphragm and said polishing diaphragm, said meshing for uniformly distributing slurry about said polishing diaphragm.
Claim 30
Independent Claim
212 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having an upper surface and a lower surface wherein a depression is formed in the upper surface of said table; a flexible polishing diaphragm attached to the upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing, said polishing pad attached above said polishing diaphragm; a slurry diaphragm having an upper and a lower surface, said slurry diaphragm placed in said chamber and attached between said table and said polishing diaphragm; a meshing placed between the upper surface of said slurry diaphragm and said polishing diaphragm, said meshing for uniformly distributing slurry about said polishing diaphragm; means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing; and a substrate carrier for forcibly pressing said substrate against said polishing pad such that said movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 31
Independent Claim
212 words
An apparatus for polishing a thin film formed on a semiconductor substrate, said apparatus comprising: a polishing pad having a plurality of spaced apart through holes; a table having an upper surface and a lower surface wherein a depression is formed in the upper surface of said table; a flexible polishing diaphragm attached to the upper surface of said table above said depression wherein said polishing diaphragm and said table form a chamber at said depression wherein pressure can be maintained in said chamber during polishing, said polishing pad attached above said polishing diaphragm; a slurry diaphragm having an upper and a lower surface, said slurry diaphragm placed in said chamber and attached between said table and said polishing diaphragm; a meshing placed between the upper surface of said slurry diaphragm and said polishing diaphragm, said meshing for uniformly distributing slurry about said polishing diaphragm; means for providing movement to said polishing pad; means for feeding slurry through said plurality of spaced apart through holes to the surface of said polishing pad during polishing; and a substrate carrier for forcibly pressing said substrate against said polishing pad such that said movement of said polishing pad relative to said substrate together with said slurry results in a planar removal of said thin film.
Claim 32
Dependent Claim
26 words
The apparatus of claim 24 wherein said polishing pad has a plurality of preformed grooves, said preformed grooves helping to facilitate uniform distribution of said slurry.
Claim 33
Dependent Claim
18 words
The apparatus of claim 24 wherein said substrate carrier rotates said substrate against said polishing pad during polishing.
Claim 34
Dependent Claim
20 words
The apparatus of claim 24 further comprising a urethane pad backing attached between said polishing pad and said polishing diaphragm.
Claim 35
Dependent Claim
86 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a first surface of a semiconductor substrate, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for orbiting said polishing pad about an axis; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad.
Claim 36
Dependent Claim
86 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a first surface of a semiconductor substrate, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for orbiting said polishing pad about an axis; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad.
Claim 37
Dependent Claim
22 words
The chemical-mechanical polishing apparatus of claim 28 wherein the radius of said orbital motion is less than the radius of said substrate.
Claim 38
Dependent Claim
23 words
The chemical-mechanical polishing apparatus of claim 28 the center of said polishing pad is offset from the center of said substrate during polishing.
Claim 39
Dependent Claim
16 words
The chemical-mechanical polishing apparatus of claim 28 wherein said substrate carrier rotates said substrate during polishing.
Claim 40
Independent Claim
97 words
A method of polishing a thin film formed on a first surface of a substrate comprising the steps of: forcibly pressing a polishing pad that is coupled to a flexible diaphragm and said first surface of said substrate together for a period of time wherein said polishing pad has a motion with respect to said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and removing said substrate from said polishing pad after polishing.
Claim 41
Independent Claim
97 words
A method of polishing a thin film formed on a first surface of a substrate comprising the steps of: forcibly pressing a polishing pad that is coupled to a flexible diaphragm and said first surface of said substrate together for a period of time wherein said polishing pad has a motion with respect to said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and removing said substrate from said polishing pad after polishing.
Claim 42
Dependent Claim
18 words
The method of claim 32 wherein said polishing pad has an orbital motion with respect to said substrate.
Claim 43
Dependent Claim
20 words
The method of claim 33 wherein the radius of said orbital motion is less than the radius of said substrate.
Claim 44
Dependent Claim
25 words
The method of claim 33 further comprising the step of offsetting the center of said polishing pad from the center of said substrate during polishing.
Claim 45
Dependent Claim
21 words
The method of claim 32 further comprising the step of rotating said substrate relative to said flexible polishing pad during polishing.
Claim 46
Dependent Claim
118 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a first surface of semiconductor substrate, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for moving said polishing pad relative to said first surface of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad wherein the movement of said polishing pad relative to said first surface of said substrate together with said slurry results in a planar removal of said thin film.
Claim 47
Dependent Claim
118 words
A chemical-mechanical polishing apparatus for polishing a thin film formed on a first surface of semiconductor substrate, said apparatus comprising: a flexible diaphragm; a polishing pad coupled to said flexible diaphragm, said polishing pad having a plurality of spaced apart through holes; means for moving said polishing pad relative to said first surface of said substrate; means for feeding an abrasive slurry through said plurality of spaced apart through holes to the surface of said polishing pad; and a substrate carrier for forcibly pressing said substrate against said polishing pad wherein the movement of said polishing pad relative to said first surface of said substrate together with said slurry results in a planar removal of said thin film.
Claim 48
Dependent Claim
27 words
The chemical-mechanical polishing apparatus of claim 37 wherein said polishing pad has a plurality of preformed grooves, said preformed grooves facilitating uniform distribution of said abrasive slurry.
Claim 49
Dependent Claim
20 words
The chemical-mechanical polishing apparatus of claim 37 wherein said polishing pad has an orbital motion with respect to said substrate.
Claim 50
Dependent Claim
22 words
The chemical-mechanical polishing apparatus of claim 39 wherein the radius of said orbital motion is less than the radius of said substrate.
Claim 51
Dependent Claim
24 words
The chemical-mechanical polishing apparatus of claim 39 wherein the center of said polishing pad is offset from the center of said substrate during polishing.
Claim 52
Dependent Claim
16 words
The chemical-mechanical polishing apparatus of claim 37 wherein said substrate carrier rotates said substrate during polishing.
Claim 53
Independent Claim
131 words
A method of polishing a thin film on a first surface of a semiconductor substrate comprising the steps of: providing a polishing pad that is coupled to a flexible diaphragm; orbiting said polishing pad about an axis wherein the radius of the orbit of said polishing pad about said axis is less than the radius of said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and forcibly pressing said first surface of said substrate and said polishing pad together wherein the orbiting movement of said polishing pad relative to said first surface of said substrate together with said slurry results in the planarization of said thin film.
Claim 54
Independent Claim
131 words
A method of polishing a thin film on a first surface of a semiconductor substrate comprising the steps of: providing a polishing pad that is coupled to a flexible diaphragm; orbiting said polishing pad about an axis wherein the radius of the orbit of said polishing pad about said axis is less than the radius of said substrate; depositing slurry onto said polishing pad during polishing wherein said slurry is deposited onto said polishing pad by feeding said slurry through a plurality of holes formed through said polishing pad; and forcibly pressing said first surface of said substrate and said polishing pad together wherein the orbiting movement of said polishing pad relative to said first surface of said substrate together with said slurry results in the planarization of said thin film.
Claim 55
Dependent Claim
19 words
The method of claim 43 further comprising the step of offsetting the center of said wafer from said axis.
Claim 56
Dependent Claim
25 words
The method of claim 43 further comprising the step of offsetting the center of said polishing pad from the center of said substrate during polishing.
Claim 57
Dependent Claim
20 words
The method of claim 43 further comprising the step of rotating said substrate relative to said polishing pad during polishing.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-09-10 | 2000-03-11 | 2000-09-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-10 | 2004-03-11 | 2004-09-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-10 | 2008-03-11 | 2008-09-10 | $7700.00 | Window Closed / Lapsed |