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US5550008A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for making a dry etching resistant positive and negative photoresist

Assignee: Sony Corp
•
Filing: 1995-05-11
•
Granted: 1996-08-27
•
Expires: 2015-05-11
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Abstract

Abstract A new photoresist composition suited for fine processing is provided which has practical applications in various dry etching processes. An advantageous pattern formation method using such a photoresist composition is also provided. The photoresist composition (1) includes a substance containing a skeleton as at least a part of the main chain. The skeleton is obtained through polymerization of a vinyl alcohol-type compound such as a polyvinyl alcohol chain, at least some hydroxyl groups in the skeleton being protected by protective groups capable of being released by an acid. The skeleton preferably contains a group for improving the dry etching resistance. The photoresistive composition also includes an optical acid generator. Development with a high polarity solvent, for instance aqueous development, is provided. A positive pattern is obtained by aqueous development and a negative pattern is obtained by alcohol development.

Inventors

  • 👤 Yoichi Tomo
  • 👤 Masao Saito

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 23:53
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0045; G03F7/039; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/106; Y10S430/11

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 174 words
A method of forming a pattern on an exposure material comprising the steps of: providing a silicon wafer substrate; providing a photoresist composition comprising: (a) a copolymer derived from: ##STR41## alone or in combination with at least one comonomer selected from: ##STR42## wherein R 0 is selected from ##STR43## groups R 10 is selected from adamantyl, norbonyl, cyclohexyl, cyclopentyl and t-butyl groups; R 1 , R 2 , R 3 and R 4 are selected from hydrogen, halogen, alkyl, chloromethyl, allyl, ##STR44## --COQ, --OAc and --CN groups, wherein Q is alkyl or cycloalkyl, and Ac is acetate; and (b) a photoacid generator, said composition being developable in a polar solution and exhibiting good dry etching resistance; spin coating a surface of the wafer with said photoresist composition to provide a coated substrate; exposing the coated substrate through a mask with a KrF or ArF excimer laser radiation to provide an exposed substrate; baking the exposed substrate; and developing the baked and exposed substrate with a developing solution to provide a pattern on the substrate.
Claim 2
Independent Claim 174 words
A method of forming a pattern on an exposure material comprising the steps of: providing a silicon wafer substrate; providing a photoresist composition comprising: (a) a copolymer derived from: ##STR41## alone or in combination with at least one comonomer selected from: ##STR42## wherein R 0 is selected from ##STR43## groups R 10 is selected from adamantyl, norbonyl, cyclohexyl, cyclopentyl and t-butyl groups; R 1 , R 2 , R 3 and R 4 are selected from hydrogen, halogen, alkyl, chloromethyl, allyl, ##STR44## --COQ, --OAc and --CN groups, wherein Q is alkyl or cycloalkyl, and Ac is acetate; and (b) a photoacid generator, said composition being developable in a polar solution and exhibiting good dry etching resistance; spin coating a surface of the wafer with said photoresist composition to provide a coated substrate; exposing the coated substrate through a mask with a KrF or ArF excimer laser radiation to provide an exposed substrate; baking the exposed substrate; and developing the baked and exposed substrate with a developing solution to provide a pattern on the substrate.
Claim 3
Dependent Claim 25 words
A method of forming a pattern as defined in claim 1, further comprising, after the developing step, rinsing the substrate with a low polarity solution.
Claim 4
Dependent Claim 22 words
A method as defined in claim 1, wherein the developing solution is an alcohol and the pattern provided is a negative pattern.
Claim 5
Dependent Claim 15 words
A method as defined in claim 1, wherein the developing solution is an aqueous solution.
Claim 6
Dependent Claim 15 words
A method as defined in claim 1, wherein the pattern provided is a positive pattern.

References Cited (Backward Citations)

US4491628A Cited
EP0333407A2 Cited
EP0487261A1 Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-08-27 2000-02-26 2000-08-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-08-27 2004-02-26 2004-08-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-08-27 2008-02-26 2008-08-27 $7700.00 Window Closed / Lapsed

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