EP0333407A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Resist material and process for information of resist patterns
Assignee: Fujitsu Ltd
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Filing: 1989-03-13
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Granted: —
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Expires: 2009-03-13
Abstract
Abstract A pattern-forming resist material comprises a water-soluble polymeric material having at least one hydroxyl group in the molecular structure thereof and a photo-acid generator which, during exposure to radiation, does not cause cross-linking of the polymeric material, but release an acid upon reaction with the polymeric material. The resist material may be negative-working and is particularly suitable for deep ultraviolet exposure. On heating, the acid causes dewatering of the unsolubilizing polymeric material so that the resist material can be developed with water to form very fine resist patterns without swelling thereof.
Inventors
- 👤 Naomichi Abe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 15:15
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/0045; G03F7/038
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
114 words
A pattern-forming resist material comprising a mixture of a water-soluble polymeric material having at least one hydroxyl group in the molecular structure thereof and a photo-acid generator which, during exposure to radiation, does not cause cross-linking of said polymeric material, but releases an acid upon reaction with said polymeric material, the product of reacting the thus reacted polymeric material with said acid on heating in the presence of said acid as catalyst providing a water-insoluble polymeric material as a result of removal of water from said reacted polymeric material, which dewatered polymeric material, when present as a substrate, if said exposure has been to patterning radiation, then provides resist patterns when developed with water.
Claim 2
Dependent Claim
114 words
A pattern-forming resist material comprising a mixture of a water-soluble polymeric material having at least one hydroxyl group in the molecular structure thereof and a photo-acid generator which, during exposure to radiation, does not cause cross-linking of said polymeric material, but releases an acid upon reaction with said polymeric material, the product of reacting the thus reacted polymeric material with said acid on heating in the presence of said acid as catalyst providing a water-insoluble polymeric material as a result of removal of water from said reacted polymeric material, which dewatered polymeric material, when present as a substrate, if said exposure has been to patterning radiation, then provides resist patterns when developed with water.
Claim 3
Dependent Claim
20 words
The resist material according to claim 1, wherein said polymeric material has no aromatic ring in the molecular structure thereof.
Claim 4
Dependent Claim
56 words
The resist material according to claim 1, or claim 2, wherein a carbon atom adjacent to another carbon atom to which said hydroxyl group is bonded in said polymeric material contains at least one hydrogen atom which can be combined with said split-off hydroxyl group to form water which is then removed from said polymeric material.
Claim 5
Dependent Claim
18 words
The resist material according to claim 1, wherein said polymeric material is polyvinyl alcohol or a derivative thereof.
Claim 6
Dependent Claim
17 words
The resist material according to claim 1, wherein said polymeric material is cellulose or a derivative thereof.
Claim 7
Dependent Claim
19 words
The resist material according to any preceding claim, wherein said photo-acid generator is an onium compound or derivative thereof.
Claim 8
Dependent Claim
41 words
The resist material according to claim 6, wherein said photo-acid generator is represented by the formula: in which Ar may be the same or different and represents a substituted or unsubstituted aromatic group, and X⁻ represents BF₄⁻ , SbF₆⁻ or AsF₆⁻.
Claim 9
Dependent Claim
24 words
The resist material according to claim 6, wherein said photo-acid generator is represented by the formula: in which X⁻ represents BF₄⁻, SbF₆⁻ or AsF₆⁻.
Claim 10
Dependent Claim
36 words
The resist material according to any preceding claim wherein said photo-acid generator is present in an amount of 2 to 10% by weight based on a combined weight of said polymeric material and said photo-acid generator.
Claim 11
Dependent Claim
27 words
The resist material according to any preceding claim wherein said photo-acid generator releases said acid when exposed to radiation having a wavelength of 200 to 3000 nm.
Claim 12
Dependent Claim
114 words
A process for the formation of a resist pattern, comprising coating a solution of a resist material as claimed in any preceding claim onto a substrate to form a resist layer, exposing said resist layer to patterning radiation to cause reaction of said polymeric material and said photo-acid generator and release of said acid, heating the exposed resist layer in the presence of said acid as a catalyst to remove water from the thus reacted polymeric material in said resist layer, thereby insolubilizing said reaction product in water, and developing said resist layer with water to remove said water-soluble polymeric material in unexposed areas of said layer to form resist patterns on said substrate.
Claim 13
Dependent Claim
21 words
A process according to claim 11, which is carried out to form negative resist patterns in the production of semiconductor devices.
Claim 14
Dependent Claim
31 words
The process according to claim 11 or 12, wherein the resist material is as defined in claim 10 and said deep ultraviolet radiation is generated from a Xe-Hg (xenon-mercury vapor) lamp.
Claim 15
Dependent Claim
29 words
The process according to claim 11 or 12, wherein the resist material is as defined in claim 10 and said deep ultraviolet radiation is generated from an excimer laser.
References Cited (Backward Citations)
No citation records indexed.
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