EP0487261A1
Expired / Lapsed
EP
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Process for forming resist pattern and resist composition therefor
Assignee: Fujitsu Ltd
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Filing: 1991-11-15
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Granted: —
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Expires: 2011-11-15
Abstract
Abstract A process for forming a resist pattern and a resist composition therefor are disclosed. This process comprises steps of: coating a substrate to be fabricated with a resist composition comprising a poly(tetrahydropyranylmethacrylate)(1): wherein, n is 50 to 5300 and a photo acid generator, exposing the resist film selectively and baking the resist film,, followed by developing the pattern-wise exposed resist film with a developer to form a resist pattern. Whereby a finely-resolved resist pattern with a high sensitivity is obtained by a present process for forming the resist pattern.
Inventors
- 👤 Yuko C/O Fujitsu Limited Kaimoto
- 👤 Koji c/o Fujitsu Limited Nozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 02:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
61 words
A process for forming a resist pattern, which comprises steps of: coating a substrate to be fabricated with a resist composition comprising a poly(tetrahydropyranylmethacrylate)(1): wherein, n is 50 to 5300 and a photo acid generator, exposing the resist film selectively and baking the resist film, followed by developing the pattern-wise exposed resist film with a developer to form a resist pattern.
Claim 2
Dependent Claim
19 words
A process according to claim 1, wherein an exposure light source is an electron beam, excimer laser or X-ray.
Claim 3
Dependent Claim
20 words
A process according to claim 1, wherein the photo acid generator is a diaryl iodonium salt or a triarylsulfonium salt.
Claim 4
Dependent Claim
16 words
A process forming negative patterns according to claim 1, the developer is a nonpolar organic solvent.
Claim 5
Dependent Claim
21 words
A process forming positive patterns according to claim 1, the developer is an alkaline aqueous solution or a polar organic solvent.
Claim 6
Dependent Claim
17 words
A process according to claim 1, the baking is carried out from about 60°C to about 120°C.
Claim 7
Dependent Claim
18 words
A resist composition, which comprises: a poly(tetrahydropyranylmethacrylate)(1). wherein, n is 50 to 5300, and a photo acid generator.
Claim 8
Dependent Claim
30 words
A resist composition according to claim 7, wherein the photo acid generator is a compound selected from the group of diaryl iodonium salt, triarylsulfonium salt, sulfonic acid ester and benzointosylate.
References Cited (Backward Citations)
EP0404206A2
Cited
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