Patent US5548151A successfully refreshed from Google Patents.
US5548151A
Expired / Lapsed
US
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Hall element for detecting a magnetic field perpendicular to a substrate
Assignee: Toshiba Corp
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Filing: 1995-02-07
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Granted: 1996-08-20
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Expires: 2015-02-07
Abstract
Abstract In a Hall element, a semiconductor layer is surrounded by a first trench filled with an insulator. A first current supply portion of an n+-type semiconductor is disposed adjacent the semiconductor layer and the first trench. Second current supply portions are also disposed adjacent the semiconductor layer and the first trench and symmetrical with respect to the first current supply portion. Sensor portions of an n+-type semiconductor are disposed adjacent the semiconductor layer and the first trench at about the center between the first and second current supply portions, respectively. A magnetic flux perpendicular to the upper surface of the semiconductor layer can be detected by the foregoing arrangement.
Inventors
- 👤 Hideyuki Funaki
- 👤 Hiroshi Mochizuki
- 👤 Ryoji Maruyama
- 👤 Kanae Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:34
CPC Classifications
H; H10; H10N; H10N52/00; H10N52/101
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
166 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface and a side surface; an insulator portion having a side surface adjacent the side surface of the semiconductor layer; a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion; a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion; and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.
Claim 2
Dependent Claim
166 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface and a side surface; an insulator portion having a side surface adjacent the side surface of the semiconductor layer; a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion; a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion; and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.
Claim 3
Dependent Claim
24 words
The Hall element according to claim 1, further comprising an insulator layer disposed below the semiconductor layer and in contact with the insulator portion.
Claim 4
Dependent Claim
23 words
The Hall element according to claim 2, wherein the first and second current supply portions and the sensor portions abut the insulator layer.
Claim 5
Dependent Claim
84 words
The Hall element according to claim 1, further comprising: a gate insulator layer disposed on the upper surface of the semiconductor layer; a gate electrode disposed on the gate insulator layer; and at least one of a depletion layer, an accumulation layer, and an inversion layer formed under the gate insulator layer when a bias voltage is applied to the gate electrode so that current between the first and second current supply portions can flow away from the upper surface of the semiconductor layer.
Claim 6
Dependent Claim
49 words
The Hall element according to claim 1, wherein the semiconductor layer is disposed between two sections of the insulator portion, and each section of the insulator portion is associated with a set of components including the first current supply portion, the second current supply portions, and the sensor portions.
Claim 7
Dependent Claim
58 words
The Hall element according to claim 5, wherein the semiconductor layer is surrounded by the insulator portion, the insulator portion has two sets of facing sides, and each set of facing sides is associated with a set of components including a first current supply portion, a pair of second current supply portions, and a pair of sensor portions.
Claim 8
Dependent Claim
45 words
The Hall element according to claim 6, wherein, for each set of facing sides, the first current supply portion, the second current supply portions, and the sensor portions are arranged substantially symmetrical with respect to a center of the semiconductor layer at a 90° period.
Claim 9
Dependent Claim
54 words
The Hall element according to claim 1, wherein the semiconductor layer is divided by the insulator portion into a first region and a second region, and each region is associated with a set of components including a first current supply portion, a pair of second current supply portions, and a pair of sensor portions.
Claim 10
Dependent Claim
45 words
The Hall element according to claim 8, wherein, for each set associated with one of the regions of the semiconductor layer, the first current supply portion, the second current supply portions, and the sensor portions are arranged substantially symmetrical with respect to the insulator portion.
Claim 11
Dependent Claim
26 words
The Hall element according to claim 1, further comprising current path control means for lengthening the current path between the first and second current supply portions.
Claim 12
Dependent Claim
50 words
The Hall element according to claim 10, wherein the current path control means comprises a current path control portion of a second conductivity type disposed between the first and second current supply portions and allowing application of a reverse voltage between the semiconductor layer and the current path control portion.
Claim 13
Dependent Claim
34 words
The Hall element according to claim 11, wherein the current path control portion is distanced from the insulator portion further than the first and second current supply portions are distanced from the insulator portion.
Claim 14
Dependent Claim
24 words
The Hall element according to claim 11, further comprising an insulator layer disposed below the semiconductor layer and in contact with the insulator portion.
Claim 15
Dependent Claim
84 words
The Hall element according to claim 10, wherein the current path control means comprises a current path control portion of an insulated gate electrode disposed in the semiconductor layer between the first and second current supply portions and configured so that the current path between the first and second current supply portions is lengthened by forming one of a depletion layer, an accumulation layer and an inversion layer surrounding the insulated gate electrode when a bias voltage is applied to the insulated gate electrode.
Claim 16
Dependent Claim
20 words
The Hall element according to claim 1, wherein the semiconductor layer is formed on a substrate having an insulator surface.
Claim 17
Dependent Claim
22 words
The Hall element according to claim 1, wherein the semiconductor layer is formed on a semiconductor substrate of a second conductivity type.
Claim 18
Dependent Claim
25 words
The Hall element according to claim 1, further comprising a second conductivity type semiconductor layer disposed on the semiconductor layer of the first conductivity type.
Claim 19
Dependent Claim
102 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface; and an insulator portion dividing the semiconductor layer into first and second current paths and providing a Hall current path between the first and second current paths, wherein the first and second current paths are substantially parallel with respect to one another so that a Hall current flows between the first and second current paths through the Hall current path when magnetic flux exists in a direction perpendicular to the upper surface of the semiconductor layer during current flowing along the first and second current paths.
Claim 20
Dependent Claim
102 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface; and an insulator portion dividing the semiconductor layer into first and second current paths and providing a Hall current path between the first and second current paths, wherein the first and second current paths are substantially parallel with respect to one another so that a Hall current flows between the first and second current paths through the Hall current path when magnetic flux exists in a direction perpendicular to the upper surface of the semiconductor layer during current flowing along the first and second current paths.
Claim 21
Dependent Claim
161 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface and a side surface; an insulator portion having a side surface adjacent the side surface of the semiconductor layer; a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion; a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a current between the first and second current supply portions has a current component perpendicular to a plane composed of an interface between the insulator portion and the semiconductor layer; and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a Hall voltage is induced between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions.
Claim 22
Dependent Claim
161 words
A Hall element comprising: a semiconductor layer of a first conductivity type having an upper surface and a side surface; an insulator portion having a side surface adjacent the side surface of the semiconductor layer; a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion; a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a current between the first and second current supply portions has a current component perpendicular to a plane composed of an interface between the insulator portion and the semiconductor layer; and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion so that a Hall voltage is induced between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions.
Claim 23
Dependent Claim
116 words
A Hall element of a planar type semiconductor device comprising: a substrate including an insulator surface; a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface; first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions; and sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.
Claim 24
Dependent Claim
116 words
A Hall element of a planar type semiconductor device comprising: a substrate including an insulator surface; a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface; first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions; and sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.
Claim 25
Dependent Claim
43 words
The Hall element according to claim 20, wherein the first and second current supply portions are disposed so that current between first and second current supply portions has a current component perpendicular to a surface including the first and second current supply portions.
Claim 26
Dependent Claim
189 words
A current detector comprising: a magnetic yoke having a gap; a wire carrying an object current and winding around the magnetic yoke; and a Hall element including a semiconductor layer of a first conductivity type having an upper surface and a side surface, an insulator portion having a side surface adjacent the side surface of the semiconductor layer, a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion, a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion, and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.
Claim 27
Dependent Claim
189 words
A current detector comprising: a magnetic yoke having a gap; a wire carrying an object current and winding around the magnetic yoke; and a Hall element including a semiconductor layer of a first conductivity type having an upper surface and a side surface, an insulator portion having a side surface adjacent the side surface of the semiconductor layer, a first current supply portion of the first conductivity type disposed adjacent the side surface of the insulator portion, a pair of second current supply portions of the first conductivity type disposed adjacent the side surface of the insulator portion, and a pair of sensor portions of the first conductivity type disposed adjacent the side surface of the insulator portion, wherein the first current supply portion is disposed between the sensor portions, the first current supply portion and the sensor portions are disposed between the second current supply portions, and the Hall element comprises means for inducing a Hall voltage between the sensor portions with magnetic flux perpendicular to the upper surface of the semiconductor layer during current flowing between the first and second current supply portions along a current path.
Claim 28
Dependent Claim
133 words
A current detector comprising: a magnetic yoke having a gap; a wire carrying an object current and winding around the magnetic yoke; and a Hall element including a substrate including an insulator surface, a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface, first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions, and sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.
Claim 29
Dependent Claim
133 words
A current detector comprising: a magnetic yoke having a gap; a wire carrying an object current and winding around the magnetic yoke; and a Hall element including a substrate including an insulator surface, a semiconductor layer of a first conductivity type disposed on the insulator surface of the substrate and having an upper surface and a side surface, first and second current supply portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that current can flow between the first and second current supply portions, and sensor portions of the first conductivity type disposed adjacent the side surface of the semiconductor layer so that a Hall voltage due to magnetic flux perpendicular to the upper surface of the semiconductor layer can be induced between the sensor portions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-08-20 | 2000-02-19 | 2000-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-08-20 | 2004-02-19 | 2004-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-08-20 | 2008-02-19 | 2008-08-20 | $7700.00 | Window Closed / Lapsed |